B. Luo

2.6k citations

93 papers · 2.2k indexed · h-index 27

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 72
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 49
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 55
- Silicon Carbide Semiconductor Technologies 15
- Gas Sensing Nanomaterials and Sensors 5
Materials Chemistry top 5%
- ZnO doping and properties 14
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 6
Mechanics of Materials
- Metal and Thin Film Mechanics 8

Co-authors: F. Ren S. J. Pearton C. R. Abernathy J. W. Johnson R. Mehandru A. H. Onstine Albert G. Baca J. M. Zavada
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Solid-State Electronics (32 papers)Applied Physics Letters (16 papers)Journal of The Electrochemical Society (9 papers)
Partner nations: United States Japan Taiwan

In The Last Decade

B. Luo

90 papers receiving 2.1k citations

Peers

Countries citing papers authored by B. Luo

Since Specialization

Citations

This map shows the geographic impact of B. Luo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Luo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Luo more than expected).

Fields of papers citing papers by B. Luo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Luo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Luo. The network helps show where B. Luo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Luo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Luo Line = papers co-authored together B. Luo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Experimental Analysis of Weld Slag Separation in Pipelines Journal of Physics Conference Series ·Rosaida Rosly,F A Bjørni,B. Luo,Hongbin Ji,Tim Kolb,Ji Wang	2024	0
2	Optical Fiber Vector Magnetic Field Sensors Based on Magnetic Fluid: A Review IEEE Sensors Journal ·康之三宅,Carl O. Hughes,Laboratorium Genetika,G. Mierdel,B. Luo,Chenglong Jiang,Ronghui Xu,Libo Yuan	2024	2
3	4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC Ali M. Darwish,K. S. Boutros,B. Luo,León Vallejo Osorio,Edward Viveiros,H. Alfred Hung	2006	15
4	Effects of Sc[sub 2]O[sub 3] Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors Journal of The Electrochemical Society ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,J La,Michelle Pollet,B. Luo,F. Ren,F. Ren,A. H. Onstine,C. R. Abernathy,S. J. Pearton	2004	4
5	Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,K. Kumararaja,Aifric Nic Aodha,Kwang Hyeon Baik,S. J. Pearton,B. Luo,F. Ren,J. M. Zavada	2004	4
6	Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface MRS Proceedings ·F. Ren,B. Luo,J. Kim,R. Mehandru,F. Ren,A. H. Onstine,C. R. Abernathy,S. J. Pearton,Robert Fitch,J. Gillespie,T. Jenkins,J. Sewell,D. Via,Antonio Crespo,Yoshihiro Irokawa	2003	1
7	Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers Journal of Lightwave Technology ·G. Dang,R. Mehandru,B. Luo,F. Ren,W. S. Hobson,J. Lopata,A Moseley,S. N. G. Chu,S. J. Pearton,Wen‐Hao Chang,H. Shen	2003	10
8	2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier Solid-State Electronics ·Yoshihiro Irokawa,B. Luo,B. S. Kang,Jihyun Kim,J. R. LaRoche,F. Ren,Kwang Hyeon Baik,S. J. Pearton,ฐิติมา ธารารัตนกุล,رضا آقاییزاده ظروفی,J.‐I. Chyi,S.S. Park,Y.J. Park	2003	2
9	Advantages and limitations of MgO as a dielectric for GaN Solid-State Electronics ·F. Ren,J. Kim,B. Luo,Xiulan Xue,Wayne Johnson,F. Ren,C. R. Abernathy,S. J. Pearton	2003	31
10	AlGaN/GaN Structures Grown by HVPE: Growth and Characterization MRS Proceedings ·M. A. Mastro,D. Tsvetkov,А. И. Печников,V. Soukhoveev,G. H. Gainer,A. Usikov,V. Dmitriev,B. Luo,F. Ren,Kwang Hyeon Baik,S. J. Pearton	2003	6
11	Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Solid-State Electronics ·Yosihiro Sei,Fadhel Lakhoua,B. Luo,F. Ren,Gil Yong Chung,S. J. Pearton,John R. Williams,K. Shenai,Philip G. Neudeck	2003	4
12	Recent advances in gate dielectrics and polarised light emission from GaN Opto-Electronics Review ·S. J. Pearton,C. R. Abernathy,F. Ren,A. H. Onstine,M. E. Overberg,G. T. Thaler,洋雄東方,B. Luo,R. Mehandru,F. Ren,Y. D. Park	2002	2
13	Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors Journal of The Electrochemical Society ·B. Luo,J. W. Johnson,F. Ren,K. K. Allums,C. R. Abernathy,S. J. Pearton,R. Dwivedi,T. N. Fogarty,R. Wilkins	2002	2
14	Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers Journal of The Electrochemical Society ·Yosihiro Sei,Jihyun Kim,B. Luo,F. Ren,Gil Yong Chung,M. F. MacMillan,John R. Williams,S. J. Pearton	2002	1
15	Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation Solid-State Electronics ·Kwang Hyeon Baik,B. Luo,Fadhel Lakhoua,S. J. Pearton,F. Ren	2002	3
16	High current bulk GaN Schottky rectifiers Solid-State Electronics ·K. Ip,Kwang Hyeon Baik,B. Luo,F. Ren,S. J. Pearton,川本芳昭,Sastri Libia,A. Nicole Sump-Crethar	2002	22
17	Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions Applied Physics Letters ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Е. А. Кожухова,B. Luo,Oluwuyi Ajani Babaranti,R. Mehandru,F. Ren,Louisa Adams Park,S. J. Pearton,A. Osinsky,P. Norris	2002	11
18	Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs physica status solidi (a) ·F. Ren,J. W. Johnson,R. Mehandru,B. Luo,A. H. Onstine,V. Krishnamoorthy,H Chiang-Wong,C. R. Abernathy,F. Ren,S. J. Pearton	2001	75
19	Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor Applied Physics Letters ·J. W. Johnson,B. Luo,F. Ren,F. Ren,Alper Gönen,C. R. Abernathy,S. J. Pearton,J.-I. Chyi,Tzer‐En Nee,Marion Buddeberg,Chang‐Cheng Chuo	2000	83
20	The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics Solid-State Electronics ·Vishal Trivedi,أنغام سعدون طه,B. Luo,X. A. Cao,Silva Carmem Lúcia de Arroxelas,F. Ren,S. J. Pearton,C. R. Abernathy,E. S. Lambers,G Wiedmann,R. Sathya Priya,J. N. Sasserath,Louise Le Ridant,Katrin Mackenzie	2000	5

About B. Luo

B. Luo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 93 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (72 papers), Semiconductor materials and devices (55 papers), Ga2O3 and related materials (49 papers), Silicon Carbide Semiconductor Technologies (15 papers), ZnO doping and properties (14 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor materials and interfaces (6 papers) and Gas Sensing Nanomaterials and Sensors (5 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (1.1k citations) and Electrical and Electronic Engineering (1.6k citations). B. Luo has collaborated with scholars based in United States, Japan and Taiwan. Frequent co-authors include F. Ren, S. J. Pearton, C. R. Abernathy, F. Ren, J. W. Johnson, R. Mehandru, A. H. Onstine, Albert G. Baca, J. M. Zavada and K. Ip. Their work appears in journals such as Solid-State Electronics, Applied Physics Letters, Journal of The Electrochemical Society, Electrochemical and Solid-State Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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