A. Crespo

442 total citations
10 papers, 357 citations indexed

About

A. Crespo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Crespo has authored 10 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Condensed Matter Physics, 7 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Crespo's work include GaN-based semiconductor devices and materials (8 papers), Ga2O3 and related materials (5 papers) and Semiconductor materials and devices (4 papers). A. Crespo is often cited by papers focused on GaN-based semiconductor devices and materials (8 papers), Ga2O3 and related materials (5 papers) and Semiconductor materials and devices (4 papers). A. Crespo collaborates with scholars based in United States. A. Crespo's co-authors include Eric R. Heller, Robert Fitch, F. Ren, J. Gillespie, S. J. Pearton, F. Ren, C. R. Abernathy, T. Jenkins, D. Via and R. Mehandru and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

A. Crespo

9 papers receiving 339 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Crespo United States	8	300	288	134	127	34	10	357
D. Via United States	9	307 1.0×	274 1.0×	122 0.9×	80 0.6×	44 1.3×	23	348
Joachim Wuerfl Germany	10	379 1.3×	370 1.3×	158 1.2×	72 0.6×	80 2.4×	23	466
B. Cui United States	12	232 0.8×	370 1.3×	258 1.9×	205 1.6×	60 1.8×	23	446
Dhrubes Biswas India	12	270 0.9×	244 0.8×	119 0.9×	125 1.0×	143 4.2×	63	396
Hongling Xiao China	10	187 0.6×	324 1.1×	182 1.4×	123 1.0×	63 1.9×	45	378
Nitin Goyal Norway	8	194 0.6×	260 0.9×	121 0.9×	85 0.7×	81 2.4×	14	314
T. Donchev Bulgaria	7	138 0.5×	98 0.3×	92 0.7×	136 1.1×	21 0.6×	42	257
Dong Sing Wuu Taiwan	9	258 0.9×	92 0.3×	81 0.6×	271 2.1×	37 1.1×	30	367
Tianli Duan China	9	237 0.8×	199 0.7×	126 0.9×	105 0.8×	38 1.1×	20	337
Hai Lu United States	8	164 0.5×	359 1.2×	252 1.9×	193 1.5×	122 3.6×	16	444

Countries citing papers authored by A. Crespo

Since Specialization

Citations

This map shows the geographic impact of A. Crespo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Crespo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Crespo more than expected).

Fields of papers citing papers by A. Crespo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Crespo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Crespo. The network helps show where A. Crespo may publish in the future.

Co-authorship network of co-authors of A. Crespo

This figure shows the co-authorship network connecting the top 25 collaborators of A. Crespo. A scholar is included among the top collaborators of A. Crespo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Crespo. A. Crespo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

Fitch, Robert, Dennis E. Walker, Kelson D. Chabak, et al.. (2011). Comparison of passivation layers for AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 13 indexed citations

Liu, Lu, F. Ren, S. J. Pearton, et al.. (2011). Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 10 indexed citations

Heller, Eric R. & A. Crespo. (2007). Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects. Microelectronics Reliability. 48(1). 45–50. 94 indexed citations

Wang, Hung-Ta, B. S. Kang, F. Ren, et al.. (2005). Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 87(17). 43 indexed citations

Kang, B. S., R. Mehandru, F. Ren, et al.. (2004). Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 84(23). 4635–4637. 24 indexed citations

Reynolds, D. C., J. E. Hoelscher, C. W. Litton, et al.. (2003). Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures. Journal of Applied Physics. 94(7). 4263–4266. 1 indexed citations

Moser, Neil, J. Gillespie, G. D. Via, et al.. (2003). Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters. 83(20). 4178–4180. 16 indexed citations

Mehandru, R., B. Luo, J. Kim, et al.. (2003). AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. Applied Physics Letters. 82(15). 2530–2532. 115 indexed citations

Gillespie, J., Robert Fitch, J. Sewell, et al.. (2002). Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 23(9). 505–507. 40 indexed citations

10.

Liou, L.L. & A. Crespo. (2000). Dielectric optical waveguide coupling analysis using two-dimensional finite-difference in time-domain simulations. Microwave and Optical Technology Letters. 26(4). 234–237. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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