M. Ťapajna

2.1k citations

90 papers · 1.8k indexed · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 47
- GaN-based semiconductor devices and materials 46
Electronic, Optical and Magnetic Materials 40
- Ga2O3 and related materials 37

Co-authors: J. Kuzmı́k Martin Kuball K. Fröhlich Umesh K. Mishra K. Hušeková Joachim Würfl Oliver Hilt R. Simms
Journals: Applied Surface Science (10 papers)Applied Physics Letters (10 papers)physica status solidi (a) (5 papers)Materials Science in Semiconductor Processing (4 papers)Semiconductor Science and Technology (4 papers)
Partner nations: Slovakia United Kingdom Germany

In The Last Decade

M. Ťapajna

86 papers receiving 1.7k citations

Peers

Countries citing papers authored by M. Ťapajna

Since Specialization

Citations

This map shows the geographic impact of M. Ťapajna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ťapajna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ťapajna more than expected).

Fields of papers citing papers by M. Ťapajna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ťapajna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ťapajna. The network helps show where M. Ťapajna may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Ťapajna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Ťapajna Line = papers co-authored together M. Ťapajna links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect of Polymer Grafting on the Tribological Performance of Graphene Oxide under Ambient Air and Vacuum ACS Applied Materials & Interfaces ·張志豐, Markéta Ilčíková, R.V. Kirilinko, أ.م. د السيد علي عبد شبيب, Matej Mičušík, Viliam Vretenár, M. Precner, Josef Osička, Ľubomír Orovčík, P. Eliáš, Edmund Dobročka, Martin Hulman, Jaroslav Mosnáček, M. Ťapajna	2025	0
2	Effect of the AlGaO Spacer Layer on the Performance of β‐Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors Advanced Electronic Materials ·Е. Н. Гулакова, Catherine Langpoklakpam, Mariana Zavarize Nica, Popovic-Dordevic Jelena, Shaloo Rakheja, Hao‐Chung Kuo, Dong‐Sing Wuu, Kenneth Järrendahl, Ching‐Lien Hsiao, Edmund Dobročka, M. Ťapajna, Filip Gucmann, Ray‐Hua Horng	2025	1
3	Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off ACS Applied Electronic Materials ·Filip Gucmann, Mark Pedersen, Aleš Chvála, R. Kúdela, Chao Yuan, M. Ťapajna, Oliver Williams, N. M. L. SOARES, P. Eliáš, OM Rueda, Jaroslav Kováč, J. Fedor, D. Gregušová	2024	3
4	Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·OM Rueda, K. Hušeková, Xiang Zheng, A. Rosová, Edmund Dobročka, M. Ťapajna, Matej Mičušík, Peter Nádaždy, N. M. L. SOARES, Miriam O Sullivan, Xiaoduo Zhang, James W. Pomeroy, Martin Kuball, Filip Gucmann	2023	19
5	Vertical GaN Transistor with Semi‐Insulating Channel physica status solidi (a) ·Jannicke Cathrine Wold Rød, R. Stoklas, S. Hasenöhrl, D. Gregušová, M. Ťapajna, Boris Hudec, Š. Haščı́k, Tamotsu Hashizume, Aleš Chvála, A. Šatka, J. Kuzmı́k	2023	1
6	Invited: Liquid-injection MOCVD-grown Ga₂O₃ on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties M. Ťapajna, N. M. L. SOARES, OM Rueda, K. Hušeková, Edmund Dobročka, Peter Nádaždy, A. Rosová, Bentolhoda Nesari, Miriam O Sullivan, Filip Gucmann	2023	1
7	Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD Materials ·Edmund Dobročka, Filip Gucmann, K. Hušeková, Peter Nádaždy, OM Rueda, N. M. L. SOARES, A. Rosová, Miroslav Mikolášek, M. Ťapajna	2022	13
8	Conductance anisotropy of MOCVD-grown α-Ga₂O₃ films caused by (010) β-Ga₂O₃ filament-shaped inclusions Journal of Physics D Applied Physics ·N. M. L. SOARES, Filip Gucmann, A. Rosová, Edmund Dobročka, K. Hušeková, OM Rueda, Miriam O Sullivan, M. Ťapajna	2022	4
9	Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD Materials Science in Semiconductor Processing ·Filip Gucmann, Peter Nádaždy, K. Hušeková, Edmund Dobročka, H. N. Rydon, N. M. L. SOARES, A. Šatka, A. Rosová, M. Ťapajna	2022	14
10	Nanofriction Properties of Mono- and Double-Layer Ti₃C₂T_x MXenes ACS Applied Materials & Interfaces ·張志豐, Monika Benkovičová, Yuriy Halahovets, 刘书文, M. Precner, Matej Mičušík, Ľubomír Orovčík, Martin Hulman, А А Vekshina, Mária Omastová, Peter Šiffalovič, M. Ťapajna	2022	18
11	InN: Breaking the limits of solid-state electronics AIP Advances ·J. Kuzmı́k, A. Adikimenakis, M. Ťapajna, D. Gregušová, Š. Haščı́k, Edmund Dobročka, K. Tsagaraki, R. Stoklas, A. Georgakilas	2021	8
12	Growth of α- and β-Ga ₂ O ₃ epitaxial layers on sapphire substrates using liquid-injection MOCVD Semiconductor Science and Technology ·N. M. L. SOARES, Filip Gucmann, K. Hušeková, Edmund Dobročka, K.S. Sarvesvaraan, Miroslav Mikolášek, K. Fröhlich, M. Ťapajna	2020	26
13	Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications Crystals ·M. Ťapajna	2020	14
14	Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures Materials Science in Semiconductor Processing ·M. Ťapajna, 謙一四宮, Filip Gucmann, K. Hušeková, D. Gregušová, Tamotsu Hashizume, J. Kuzmı́k	2018	5
15	Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition Applied Surface Science ·R. Stoklas, D. Gregušová, S. Hasenöhrl, Chen Cong, M. Ťapajna, K. Fröhlich, Š. Haščı́k, M. Gregor, J. Kuzmı́k	2018	10
16	Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors physica status solidi (a) ·M. Blaho, D. Gregušová, Š. Haščı́k, 李允辉, M. Ťapajna, K. Fröhlich, Takayuki Taketomi, J.‐F. Carlin, N. Grandjean, J. Kuzmı́k	2015	23
17	Self-Heating in GaN Transistors Designed for High-Power Operation IEEE Transactions on Electron Devices ·J. Kuzmı́k, M. Ťapajna, Michael Kest, Indira N. Bhatt, D. Donoval, Clément Fleury, D. Pogány, G. Strasser, Oliver Hilt, Frank Brunner, Joachim Würfl	2014	46
18	On the identification of trap location in AlGaN/GaN HEMTs during electrical stress M. Ťapajna, R. Simms, Yi Pei, Umesh K. Mishra, Martin Kuball	2010	2
19	Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes Journal of Applied Physics ·M. Ťapajna, A. Rosová, Edmund Dobročka, V. Štrbı́k, Š. Gaži, K. Fröhlich, Mali Yang, L. Harmatha, A V Trjapel’nikov, P. K. Baumann	2008	9
20	Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition Journal of The Electrochemical Society ·K. Fröhlich, R. Lupták, K. Hušeková, K. Čičo, M. Ťapajna, 周觅, P. K. Baumann, J. Lindner, J.P. Espinós	2006	2

About M. Ťapajna

M. Ťapajna is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Renewable Energy, Sustainability and the Environment, having authored 90 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (66 papers), GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Ferroelectric and Negative Capacitance Devices (10 papers), Advanced Memory and Neural Computing (8 papers) and Semiconductor materials and interfaces (7 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (711 citations), Electrical and Electronic Engineering (1.3k citations), Materials Chemistry (557 citations) and Atomic and Molecular Physics, and Optics (262 citations). M. Ťapajna has collaborated with scholars based in Slovakia, United Kingdom and Germany. Frequent co-authors include J. Kuzmı́k, Martin Kuball, K. Fröhlich, Umesh K. Mishra, K. Hušeková, Joachim Würfl, Oliver Hilt, R. Simms, Edmund Dobročka and Eldad Bahat‐Treidel. Their work appears in journals such as Applied Surface Science, Applied Physics Letters, physica status solidi (a), Materials Science in Semiconductor Processing and Semiconductor Science and Technology.

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