Neil Moser

2.2k citations

45 papers · 1.9k indexed · h-index 18

Impact in

Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials
Renewable Energy, Sustainability and the Environment top 5%
- Advanced Photocatalysis Techniques

Papers in

Condensed Matter Physics 22
- GaN-based semiconductor devices and materials 22
Electronic, Optical and Magnetic Materials 30
- Ga2O3 and related materials 30

Co-authors: Gregg H. Jessen Kelson D. Chabak Antonio Crespo Kevin Leedy Robert Fitch Andrew J. Green Jonathan P. McCandless Stephen E. Tetlak
Journals: Applied Physics Letters (9 papers)IEEE Electron Device Letters (7 papers)Semiconductor Science and Technology (3 papers)Solid-State Electronics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States Germany

In The Last Decade

Neil Moser

45 papers receiving 1.8k citations

Peers

Countries citing papers authored by Neil Moser

Since Specialization

Citations

This map shows the geographic impact of Neil Moser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Neil Moser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Neil Moser more than expected).

Fields of papers citing papers by Neil Moser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Neil Moser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Neil Moser. The network helps show where Neil Moser may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Neil Moser, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Neil Moser Line = papers co-authored together Neil Moser links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Theoretical Power Figure-of-Merit in β -Ga₂O₃ Lateral Power Transistors Determined Using Physics-Based TCAD Simulation IEEE Transactions on Electron Devices ·Shaikh Ahmed, Ahmad E. Islam, Daniel M. Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil Moser, Kelson D. Chabak, Andrew Green	2024	3
2	Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga₂O₃ MOSFETs Semiconductor Science and Technology ·Vijay F Nagannawar, Neil Moser, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak, Kin P. Cheung, Sujitra Pookpanratana, Qin Li	2023	4
3	The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga₂O₃ Lateral MESFETs Determined Using Physics-Based TCAD Simulation Shaikh Ahmed, A. B. M. Saiful Islam, Daniel M. Dryden, Kyle J. Liddy, Pankaj K. P. Shreyaskar, Neil Moser, Kelson D. Chabak, Andrew J. Green	2023	1
4	2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC physica status solidi (a) ·Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Neil Moser, Michael Elliott, Matthew Guidry, K. Shinohara, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	2023	7
5	High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application Semiconductor Science and Technology ·Peng Cui, Neil Moser, Hang Chen, John Q. Xiao, Kelson D. Chabak, Yuping Zeng	2023	3
6	Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz Austin Hickman, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	2021	7
7	Toward high voltage radio frequency devices in β-Ga2O3 Applied Physics Letters ·Neil Moser, Kyle J. Liddy, Ahmad E. Islam, Nicholas C. Miller, Kevin Leedy, Thaddeus J. Asel, Shin Mou, Andrew Green, Kelson D. Chabak	2020	37
8	RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band IEEE Electron Device Letters ·Andrew J. Green, Neil Moser, Nicholas C. Miller, Kyle J. Liddy, Miles Lindquist, J Naysmith Briar, J. Gillespie, Robert Fitch, Ryan Gilbert, Dennis E. Walker, Shaimaa Ahmed, Antonio Crespo, Edward Beam, Andy Xie, Cathy Lee, Yu Cao, Kelson D. Chabak	2020	59
9	Lateral β-Ga₂O₃ field effect transistors Semiconductor Science and Technology ·Kelson D. Chabak, Kevin Leedy, Andrew J. Green, Shin Mou, Adam T. Neal, Thaddeus J. Asel, Eric R. Heller, Nolan S. Hendricks, Kyle J. Liddy, Antonio Crespo, Nicholas C. Miller, Miles Lindquist, Neil Moser, Robert Fitch, Dennis E. Walker, Donald L. Dorsey, Gregg H. Jessen	2019	99
10	Toward realization of Ga<inf>2</inf>O<inf>3</inf> for power electronics applications Gregg H. Jessen, Kelson D. Chabak, Andrew R. Green, Jonathan P. McCandless, Catherine M. Kasper, Kevin Leedy, Robert Fitch, Shin Mou, Eric R. Heller, Ştefan C. Bǎdescu, Antonio Crespo, Neil Moser	2017	14
11	High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge Applied Physics Letters ·Neil Moser, Jonathan P. McCandless, Antonio Crespo, Kevin Leedy, Andrew J. Green, Eric R. Heller, Kelson D. Chabak, Nathalia Peixoto, Gregg H. Jessen	2017	72
12	Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Applied Physics Letters ·Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev, D. C. Look, John Boeckl, Jeff L. Brown, Stephen E. Tetlak, Andrew J. Green, Neil Moser, Antonio Crespo, Darren B. Thomson, Robert Fitch, Jonathan P. McCandless, Gregg H. Jessen	2017	141
13	Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage Applied Physics Letters ·Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric R. Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, M. Baldini, G. Wagner, Zbigniew Galazka, Xiuling Li, Gregg H. Jessen	2016	307
14	Investigation of thermal effects in β-Ga₂O₃ MOSFET using pulsed IV Neil Moser, Antonio Crespo, Stephen E. Tetlak, Andrew J. Green, Kelson D. Chabak, Gregg H. Jessen	2016	2
15	Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates Journal of Electronic Materials ·Tim Anderson, F. Ren, Alex Polikoff, Jenshan Lin, S. J. Pearton, Trinh Nhu Nguy, C. Bozada, Robert Fitch, Neil Moser, Robert F. Bedford, Sébastien Adalid	2006	10
16	Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·B. S. Kang, David Uyanra Delgado, 马辑红, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, S. J. Pearton	2004	5
17	Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, 马辑红, F. Ren, S. J. Pearton	2004	13
18	Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs Antonio Crespo, Robert Fitch, J. Gillespie, Neil Moser, G. D. Via, 舘野正夫	2003	2
19	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Neil Moser, 舘野正夫, Antonio Crespo, J. Sewell, R. Dettmer, T. Jenkins, R. F. Davis, Jinwei Yang, M.A. Khan, S.C. Binari	2003	15
20	Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Neil Moser, J. Gillespie, G. D. Via, A. Crespo, 舘野正夫, Gregg H. Jessen, Robert Fitch, B. Luo, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton	2003	16

About Neil Moser

Neil Moser is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Renewable Energy, Sustainability and the Environment, having authored 45 papers that have together received 1.9k indexed citations. Recurring topics across this work include Ga2O3 and related materials (30 papers), GaN-based semiconductor devices and materials (22 papers), ZnO doping and properties (21 papers), Semiconductor materials and devices (18 papers), Electronic and Structural Properties of Oxides (12 papers), Radio Frequency Integrated Circuit Design (6 papers), Advanced Photocatalysis Techniques (6 papers) and Metal and Thin Film Mechanics (4 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (1.6k citations), Renewable Energy, Sustainability and the Environment (647 citations), Condensed Matter Physics (449 citations), Materials Chemistry (1.5k citations) and Electrical and Electronic Engineering (571 citations). Neil Moser has collaborated with scholars based in United States and Germany. Frequent co-authors include Gregg H. Jessen, Kelson D. Chabak, Antonio Crespo, Kevin Leedy, Robert Fitch, Andrew J. Green, Jonathan P. McCandless, Stephen E. Tetlak, G. Wagner and Zbigniew Galazka. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology, Solid-State Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact