T.E. Kazior

3.3k citations

72 papers · 2.6k indexed · 2 hit papers · h-index 17

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Atomic and Molecular Physics, and Optics 38
- Semiconductor Quantum Structures and Devices 32
- Semiconductor materials and interfaces 6

Co-authors: Yifeng Wu Umesh K. Mishra Likun Shen S.C. Binari P. B. Klein W. E. Hoke C.S. Whelan H. C. Gatos
Journals: IEEE Electron Device Letters (3 papers)Proceedings of the IEEE (3 papers)Journal of Applied Physics (2 papers)Journal of The Electrochemical Society (2 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)
Partner nations: United States France Switzerland

In The Last Decade

T.E. Kazior

68 papers receiving 2.4k citations

Hit Papers

align trajectories log scale

GaN-Based RF Power Devices and Amplifiers 2008 · 1.4k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2008 Proceedings of the IEEE
2002 Proceedings of the IEEE

Peers

Countries citing papers authored by T.E. Kazior

Since Specialization

Citations

This map shows the geographic impact of T.E. Kazior's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.E. Kazior with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.E. Kazior more than expected).

Fields of papers citing papers by T.E. Kazior

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.E. Kazior. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.E. Kazior. The network helps show where T.E. Kazior may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T.E. Kazior, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T.E. Kazior Line = papers co-authored together T.E. Kazior links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications T.E. Kazior, Eduardo M. Chumbes, B. D. Schultz, Jane Davies, David J. Meyer, Matthew T. Hardy	2019	29
2	(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come ECS Transactions ·J. R. LaRoche, T. I. Fomicheva, Zuraini Md Dali, W. E. Hoke, Yu Cao, Ahmad Asyikin, John Gilks, G. Gebara, T. A. Kennedy, Richards Anne, Oleg Laboutin, C. Y. Fong, Arve Vøllo, Wayne Johnson, T.E. Kazior, Jonathan P. Comeau	2014	1
3	More than Moore: III-V devices and Si CMOS get it together T.E. Kazior	2013	2
4	Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke, R. Pendzialek, Ahmad Asyikin, T.E. Kazior, J. R. LaRoche, 敏克井上, Zhang Hengfeng, A. Torabi, Thi-My-Le Huynh, Edirlan Rosa Cajaes, Tomás Palacios	2011	73
5	High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate T.E. Kazior, R. Pendzialek, W. E. Hoke, Ahmad Asyikin, Tomás Palacios, Е.Л. ТРОФИМОВА	2011	38
6	Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke, 敏克井上, J. R. LaRoche, A. Torabi, Ahmad Asyikin, Scarleth Judith, Amanda Fritzlan, P. S. Lyman, T.E. Kazior, Mayank T. Bulsara, Eugene A. Fitzgerald, D. Lubyshev, Norman Mathieson Leitch	2010	3
7	Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration DSpace@MIT (Massachusetts Institute of Technology) ·Nancy Yang, Mayank T. Bulsara, Eugene A. Fitzgerald, 管子, D. Lubyshev, J. M. Fastenau, Ying Wu, Miguel Urteaga, W. Ha, J. Bergman, B. Brar, Birgit Pfeiler, Nicolas Daval, L. Benaissa, E. Augendre, W. E. Hoke, J. R. LaRoche, K.J. Herrick, T.E. Kazior	2009	3
8	GaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting. Proceedings of the IEEE ·Umesh K. Mishra, Likun Shen, T.E. Kazior, Yifeng Wu	2008	1
9	Direct Growth of III-V Devices on Silicon MRS Proceedings ·Hiroshi Yamane, T.E. Kazior, Amy Liu, Dmitri Loubychev, J. M. Fastenau, Miguel Urteaga, Eugene A. Fitzgerald, Mayank T. Bulsara, David Clark, B. Brar, Wonill Ha, Hao Zhou, Nicolas Daval, Aneta Valiseva Ivanova	2008	1
10	Trapping effects in wide-bandgap microwave FETs S.C. Binari, P. B. Klein, T.E. Kazior	2003	18
11	One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching S. Shanfield, A. Platzker, 彭小瑜, T.E. Kazior, かの子山本, Anthony Bertrand, W. E. Hoke, P. S. Lyman	2003	3
12	40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology IEEE Electron Device Letters ·Walter Fonseca-Araujo, C.S. Whelan, R.E. Leoni, P.F. Marsh, W. E. Hoke, 曾印泉, Eric Rafael Oliveira, T.E. Kazior	2003	11
13	The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT Jong‐Chin Huang, 耕典岡部, A. Platzker, T.E. Kazior, 彭小瑜, S. Shanfield, Anthony Bertrand, Ryan Wetzler, Alejandro J Pino	2002	1
14	GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications C.S. Whelan, P.F. Marsh, W. E. Hoke, Shaxina Jabborova, Christopher Jude McCarroll, T.E. Kazior	2002	22
15	Reactive ion etching of InP via holes Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Rosemary A. Jones, John G. Keane, T.E. Kazior	1994	11
16	Capless rapid thermal annealing of GaAs using a graphite susceptor IEEE Transactions on Semiconductor Manufacturing ·T.E. Kazior, О.О. Гололобова, Graziela Franceschini Dorigon	1991	3
17	Selective Gate Recessing of GaAs/AIGaAs/lnGaAs Pseudomorphic HEMT Structures Using BCl₃ Plasmas MRS Proceedings ·T.E. Kazior, かの子山本	1991	2
18	Pd-Ge-Au Ohmic Contacts to GaAs: Reliability and Failure Analysis MRS Proceedings ·T.E. Kazior, H. Hieslmair, P Bailey	1990	2
19	Reliability of Ohmic Contacts for AlGaAs/GaAs HBTs MRS Proceedings ·Gordon Jackson, Tamara Aulia Fakhrinnisa, Scarleth Judith, T.E. Kazior, Robert A. Sprague, P Bailey, K. C. Hsieh	1990	1
20	A single chip 2.20 GHz T/R module Fred Schindler, R. Costes, T.E. Kazior, Anthony Bertrand, Divya Parisa	1990	5

About T.E. Kazior

T.E. Kazior is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 72 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Semiconductor Quantum Structures and Devices (32 papers), Radio Frequency Integrated Circuit Design (30 papers), GaN-based semiconductor devices and materials (20 papers), Semiconductor Lasers and Optical Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Electronic, Optical and Magnetic Materials (657 citations), Electrical and Electronic Engineering (2.0k citations), Atomic and Molecular Physics, and Optics (808 citations) and Materials Chemistry (475 citations). T.E. Kazior has collaborated with scholars based in United States, France and Switzerland. Frequent co-authors include Yifeng Wu, Umesh K. Mishra, Likun Shen, S.C. Binari, P. B. Klein, W. E. Hoke, C.S. Whelan, H. C. Gatos, J. Łagowski and P.F. Marsh. Their work appears in journals such as IEEE Electron Device Letters, Proceedings of the IEEE, Journal of Applied Physics, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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