R. Mehandru

1.7k total citations
37 papers, 906 citations indexed

About

R. Mehandru is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Mehandru has authored 37 papers receiving a total of 906 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Mehandru's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (23 papers) and Ga2O3 and related materials (17 papers). R. Mehandru is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (23 papers) and Ga2O3 and related materials (17 papers). R. Mehandru collaborates with scholars based in United States, Japan and Russia. R. Mehandru's co-authors include F. Ren, S. J. Pearton, B. Luo, F. Ren, C. R. Abernathy, A. H. Onstine, J. W. Johnson, Jihyun Kim, Yoshihiro Irokawa and J. Kim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. Mehandru

37 papers receiving 884 citations

Peers

R. Mehandru

EEE

CMP

EOMM

AMPO

J.S. Flynn United States

Junxue Ran China

B. P. Luther United States

C. F. Lo United States

David A. Deen United States

J. Teubert Germany

A. Adikimenakis Greece

Sung Ryong Ryu South Korea

P. M. Bridger United States

I. Halidou Tunisia

J.S. Flynn United States

R. Mehandru

484 ×0.7

EEE

614 ×0.9

CMP

243 ×0.6

EOMM

214 ×0.8

283 ×2.4

AMPO

Citations per year, relative to R. Mehandru R. Mehandru (= 1×) peers J.S. Flynn

Countries citing papers authored by R. Mehandru

Since Specialization

Citations

This map shows the geographic impact of R. Mehandru's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Mehandru with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Mehandru more than expected).

Fields of papers citing papers by R. Mehandru

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Mehandru. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Mehandru. The network helps show where R. Mehandru may publish in the future.

Co-authorship network of co-authors of R. Mehandru

This figure shows the co-authorship network connecting the top 25 collaborators of R. Mehandru. A scholar is included among the top collaborators of R. Mehandru based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Mehandru. R. Mehandru is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kang, B. S., S. Kim, J. Kim, et al.. (2005). AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2684–2687. 6 indexed citations

Shen, H., Barry L. Stann, P. G. Newman, et al.. (2004). Improved optoelectronic mixing of InAlAs/InGaAs interdigitated-finger metal-semiconductor-metal photodetectors. 5086. 1021–1025. 1 indexed citations

Stann, Barry L., et al.. (2004). Analysis of InGaAs metal-semiconductor-metal OE mixers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5349. 197–197. 2 indexed citations

Shen, Hongen, P. G. Newman, Wendy L. Sarney, et al.. (2004). Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5412. 99–99. 3 indexed citations

Mehandru, R., Sang‐Won Kang, Sang‐Woo Kim, et al.. (2004). Effect of deposition conditions and annealing on W Schottky contacts on n-GaN. Materials Science in Semiconductor Processing. 7(1-2). 95–98. 14 indexed citations

Ren, F., B. Luo, J. Kim, et al.. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. MRS Proceedings. 764. 1 indexed citations

Mehandru, R., S. Kim, J. Kim, et al.. (2003). Thermal simulations of high power, bulk GaN rectifiers. Solid-State Electronics. 47(6). 1037–1043. 7 indexed citations

Dang, G., R. Mehandru, B. Luo, et al.. (2003). Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers. Journal of Lightwave Technology. 21(4). 1020–1031. 10 indexed citations

Stann, Barry L., et al.. (2003). Analysis of the mixing effect in InAlAs/InGaAs metal‐semiconductor‐metal photodetectors. Microwave and Optical Technology Letters. 39(2). 108–112. 1 indexed citations

10.

Shen, Hongen, et al.. (2003). Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5086. 369–369. 2 indexed citations

11.

Luo, B., R. Mehandru, Jihyun Kim, et al.. (2003). High three-terminal breakdown voltage and output power of Sc ₂ O ₃ passivated AlGaN/GaN high electron mobility transistors. Electronics Letters. 39(10). 809–810. 3 indexed citations

12.

Pearton, S. J., C. R. Abernathy, F. Ren, et al.. (2002). Recent advances in gate dielectrics and polarised light emission from GaN. Opto-Electronics Review. 10(4). 231–236. 2 indexed citations

13.

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2002). Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. Applied Physics Letters. 80(18). 3352–3354. 11 indexed citations

14.

Gillespie, J., Robert Fitch, J. Sewell, et al.. (2002). Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 23(9). 505–507. 40 indexed citations

15.

Mehandru, R., F. Ren, J. Kim, et al.. (2002). Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide. Electrochemical and Solid-State Letters. 5(7). G51–G51. 24 indexed citations

16.

Luo, B., R. Mehandru, Jihyun Kim, et al.. (2002). The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS. Solid-State Electronics. 46(12). 2185–2190. 10 indexed citations

17.

Luo, B., J. W. Johnson, R. Mehandru, et al.. (2002). Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters. 80(9). 1661–1663. 156 indexed citations

18.

Kim, Jihyun, R. Mehandru, B. Luo, et al.. (2002). Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes. Applied Physics Letters. 80(24). 4555–4557. 82 indexed citations

19.

Ren, F., J. W. Johnson, R. Mehandru, et al.. (2001). Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs. physica status solidi (a). 188(1). 239–242. 75 indexed citations

20.

Ren, F., J. W. Johnson, R. Mehandru, et al.. (2001). Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs. physica status solidi (a). 188(1). 239–242. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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