Manuel Trejo

763 citations

18 papers · 622 indexed · h-index 11

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 16
- GaN-based semiconductor devices and materials 16
Electronic, Optical and Magnetic Materials 6
- Ga2O3 and related materials 6

Co-authors: J. Gillespie Antonio Crespo G. D. Via Gregg H. Jessen Robert Fitch Derrick Langley Eric R. Heller Kelson D. Chabak
Journals: IEEE Electron Device Letters (6 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)physica status solidi (a) (2 papers)Technological Forecasting and Social Change (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States United Kingdom Slovakia

In The Last Decade

Manuel Trejo

15 papers receiving 573 citations

Peers

Countries citing papers authored by Manuel Trejo

Since Specialization

Citations

This map shows the geographic impact of Manuel Trejo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Manuel Trejo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Manuel Trejo more than expected).

Fields of papers citing papers by Manuel Trejo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Manuel Trejo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Manuel Trejo. The network helps show where Manuel Trejo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Manuel Trejo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Manuel Trejo Line = papers co-authored together Manuel Trejo links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

#	Work
1	Materials Characterization and Device Performance Survey of InAlN/GaN HEMT Layers from Commercial Sources Manuel Trejo, Gregg H. Jessen, A. Crespo-Sosa, (unknown), (unknown), (unknown), D. H. Tomich, Joshua M. Grant, (unknown), (unknown), (unknown)	2015	0
2	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	21
3	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Vincent Clay, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
4	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat, Miguel Montes Bajo, James W. Pomeroy, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	48
5	Comparison of passivation layers for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Robert Fitch, Dennis E. Walker, Kelson D. Chabak, J. Gillespie, M. Khludova, Manuel Trejo, A. Crespo, Lu Liu, Amanda Alvariz Lopes, C. F. Lo, F. Ren, Wahyu Nur Alimyaningtias, S. J. Pearton	2011	13
6	High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator IEEE Electron Device Letters ·Kelson D. Chabak, Dennis E. Walker, Michael R. Johnson, Antonio Crespo, A. M. Dabiran, David J. Smith, A. M. Wowchak, Hee seung Lee, M. Khludova, J. Gillespie, Robert Fitch, Manuel Trejo	2011	32
7	SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs International Journal of High Speed Electronics and Systems ·Kelson D. Chabak, Dennis E. Walker, Antonio Crespo, Manuel Trejo, M. Khludova, Catherine M. Kasper, J. Gillespie, Robert Fitch, G. D. Via, A. M. Dabiran, A. M. Wowchak, P. P. Chow	2011	0
8	Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, F. Ren, S. J. Pearton, Robert Fitch, Dennis E. Walker, Kelson D. Chabak, J. Gillespie, M. Khludova, Manuel Trejo, D. Via, A. Crespo	2011	10
9	Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency IEEE Electron Device Letters ·Kelson D. Chabak, Manuel Trejo, Antonio Crespo, Dennis E. Walker, Jinwei Yang, R. Gaška, M. Khludova, J. Gillespie, Gregg H. Jessen, Virginia Trimble, G. D. Via	2010	25
10	High frequency performance of Ga free barrier AlInN/GaN HEMT Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Antonio Crespo, Zang Ping, Kelson D. Chabak, J. Gillespie, Gregg H. Jessen, M. Khludova, J P Liu, Manuel Trejo, G. D. Via, Narain As, H. E. SMITH, Dennis E. Walker, Maria Clara Z Zontin, Xiaoqin Gao, Shiping Guo	2010	2
11	AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications physica status solidi (a) ·Shiping Guo, Xiang Gao, André Hiratsuka, Osita Echieobi, Han Wang, Tomás Palacios, Antonio Crespo, J. Gillespie, Kelson D. Chabak, Manuel Trejo, L. Labidi, J. Knollenberg, G. D. Via, M. Khludova, Howard E. Smith, D. H. Tomich	2010	25
12	Progress towards III‐nitrides HEMTs on free‐standing diamond substrates for thermal management physica status solidi (a) ·Manuel Trejo, Gregg H. Jessen, Kelson D. Chabak, J. Gillespie, Antonio Crespo, M. Khludova, Virginia Trimble, Derrick Langley, Eric R. Heller, B. Claflin, Dennis E. Walker, Carol Fritz-Gibbon, Ryan Gilbert, G. D. Via, J. E. Hoelscher, J.A. Roussos, Felix Ejeckam, Sergei I. Okhotnikov	2010	8
13	Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects Zenodo (CERN European Organization for Nuclear Research) ·Manuel Trejo, Kelson D. Chabak, Carol Fritz-Gibbon, Ryan Gilbert, Antonio Crespo, J. Gillespie, M. Khludova, Dennis E. Walker, G. D. Via, Gregg H. Jessen, Daniel Francis, Firooz Faili, D.I. Babic, Felix Ejeckam	2010	5
14	Processing Methods for Low Ohmic Contact Resistance in AlN/GaN MOSHEMTs Kelson D. Chabak, Antonio Crespo, D. H. Tomich, Derrick Langley, L. Labidi, Manuel Trejo, B. Cui	2009	10
15	Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates IEEE Electron Device Letters ·Kelson D. Chabak, J. Gillespie, L. Labidi, Antonio Crespo, J.A. Roussos, Manuel Trejo, Dennis E. Walker, G. D. Via, Gregg H. Jessen, J. Wasserbauer, Firooz Faili, D.I. Babic, Daniel Francis, Felix Ejeckam	2009	54
16	High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier IEEE Electron Device Letters ·Antonio Crespo, J. Knollenberg, Kelson D. Chabak, J. Gillespie, Gregg H. Jessen, L. Labidi, Manuel Trejo, G. D. Via, Dennis E. Walker, Narain As, H. E. SMITH, Maria Clara Z Zontin, Xiaoqin Gao, Shiping Guo	2009	87
17	Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices IEEE Transactions on Electron Devices ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Antonio Crespo, Derrick Langley, 正浩松山, Manuel Trejo, Eric R. Heller	2007	270
18	Assessing techno-economic alternatives for rural development in Northeast Mexico Technological Forecasting and Social Change ·B. Grašič, 穆琳琳, Manuel Trejo	1984	0

About Manuel Trejo

Manuel Trejo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Development, Mechanics of Materials and Electrical and Electronic Engineering, having authored 18 papers that have together received 622 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Silicon Carbide Semiconductor Technologies (7 papers), Ga2O3 and related materials (6 papers), Metal and Thin Film Mechanics (5 papers), Semiconductor materials and devices (4 papers), Radio Frequency Integrated Circuit Design (3 papers), Acoustic Wave Resonator Technologies (3 papers) and Semiconductor Quantum Structures and Devices (2 papers). The work is most often cited by research in Condensed Matter Physics (570 citations), Electronic, Optical and Magnetic Materials (255 citations), Electrical and Electronic Engineering (458 citations), Atomic and Molecular Physics, and Optics (142 citations) and Mechanics of Materials (81 citations). Manuel Trejo has collaborated with scholars based in United States, United Kingdom and Slovakia. Frequent co-authors include J. Gillespie, Antonio Crespo, G. D. Via, Gregg H. Jessen, Robert Fitch, Derrick Langley, Eric R. Heller, Kelson D. Chabak, Dennis E. Walker and Shiping Guo. Their work appears in journals such as IEEE Electron Device Letters, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, physica status solidi (a), Technological Forecasting and Social Change and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact