J. E. Hoelscher

648 citations

23 papers · 524 indexed · h-index 10

Materials Chemistry top 10%
- ZnO doping and properties 7
- Graphene research and applications 5
- Diamond and Carbon-based Materials Research 3
- Quantum Dots Synthesis And Properties 2
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 6
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 9
Acoustics and Ultrasonics
Electrical and Electronic Engineering
- Chalcogenide Semiconductor Thin Films 3
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 7

Co-authors: D. C. Reynolds D. C. Look B. Jogai R. E. Sherriff Michael J. Callahan W. C. Mitchel T. C. Collins Lawrence Grazulis
Cited by: Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics
Journals: Advanced Materials (1 paper)Nature Communications (1 paper)Applied Physics Letters (3 papers)
Partner nations: United States South Korea

In The Last Decade

J. E. Hoelscher

22 papers receiving 513 citations

Peers

Countries citing papers authored by J. E. Hoelscher

Since Specialization

Citations

This map shows the geographic impact of J. E. Hoelscher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Hoelscher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Hoelscher more than expected).

Fields of papers citing papers by J. E. Hoelscher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Hoelscher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Hoelscher. The network helps show where J. E. Hoelscher may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. E. Hoelscher, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Hoelscher Line = papers co-authored together J. E. Hoelscher links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene Nature Communications ·Jeong-Ho Park,W. C. Mitchel,S. Elhamri,Lawrence Grazulis,J. E. Hoelscher,K. Mahalingam,Choongyu Hwang,Sung‐Kwan Mo,Jonghoon Lee	2015	46
2	Surface characterization studies of orientation patterned ZnSe doped with Cr²⁺ Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·B. Rami Reddy,Kenneth L. Schepler,Elizabeth A. Moore,J. E. Hoelscher,Shiva Vangala,B. Claflin,N. B. Singh,Jonathan W. Evans,Patrick A. Berry	2015	2
3	Recent Progress in GaN-on-Diamond Device Technology K. Sutherlin,Stephen E. Tetlak,Brian Poling,Ryan Gilbert,B. Moore,J. E. Hoelscher,B. Stumpff,Avram Bar‐Cohen,Avinash S. Kane,Wright-Patterson Afb	2014	20
4	Band gap formation in graphene by in-situ doping Applied Physics Letters ·Jeong-Ho Park,W. C. Mitchel,Gail J. Brown,S. Elhamri,Lawrence Grazulis,Howard E. Smith,Shanèe Pacley,John Boeckl,Kurt G. Eyink,Shin Mou,D. H. Tomich,J. E. Hoelscher	2011	9
5	Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) Advanced Materials ·Jeong-Ho Park,W. C. Mitchel,Lawrence Grazulis,Howard E. Smith,Kurt G. Eyink,John Boeckl,D. H. Tomich,Shanèe Pacley,J. E. Hoelscher	2010	95
6	Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC Carbon ·J.H. Park,W. C. Mitchel,L. Grazulis,Kurt G. Eyink,H. E. SMITH,J. E. Hoelscher	2010	17
7	Progress towards III‐nitrides HEMTs on free‐standing diamond substrates for thermal management physica status solidi (a) ·Manuel Trejo,Gregg H. Jessen,Kelson D. Chabak,J. Gillespie,Antonio Crespo,Mauricio Kossler,Virginia Trimble,Derrick Langley,Eric R. Heller,B. Claflin,Dennis E. Walker,Brian Poling,Ryan Gilbert,G. D. Via,J. E. Hoelscher,J.A. Roussos,Felix Ejeckam,J. Zimmer	2010	8
8	Shape changes in patterned planar InAs as a function of thickness and temperature Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Kurt G. Eyink,L. Grazulis,K. Mahalingam,Marlon Twyman,Jodie Shoaf,J. E. Hoelscher,C. Claflin,D. H. Tomich	2010	1
9	Laser precision-based graphene growth processes Sarah J. Bertke,D. H. Tomich,J. E. Hoelscher,Ronald L. Jacobsen	2009	1
10	Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals Applied Physics Letters ·D. C. Reynolds,C. W. Litton,T. C. Collins,J. E. Hoelscher,Jeff Nause	2006	5
11	High-quality, melt-grown ZnO single crystals Journal of Applied Physics ·D. C. Reynolds,C. W. Litton,D. C. Look,J. E. Hoelscher,B. Claflin,T. C. Collins,Jeff Nause,Bill Nemeth	2004	56
12	Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures Journal of Applied Physics ·D. C. Reynolds,J. E. Hoelscher,C. W. Litton,T. C. Collins,Robert Fitch,G. D. Via,J. Gillespie,A. Crespo,T. Jenkins,A. Saxler	2003	1
13	Strain splitting of the Γ5 and Γ6 free excitons in GaN Applied Physics Letters ·D. C. Reynolds,J. E. Hoelscher,C. W. Litton,T. C. Collins	2002	3
14	Temperature dependence of free excitons in GaN Journal of Applied Physics ·D. C. Reynolds,J. E. Hoelscher,C. W. Litton,T. C. Collins	2002	10
15	Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions MRS Internet Journal of Nitride Semiconductor Research ·D. C. Look,J. E. Hoelscher,Jeff L. Brown,G. D. Via	2001	6
16	Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO Journal of Applied Physics ·D. C. Reynolds,D. C. Look,B. Jogai,J. E. Hoelscher,R. E. Sherriff,M. T. Harris,Michael J. Callahan	2000	130
17	Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy Journal of Applied Physics ·D. C. Reynolds,D. C. Look,B. Jogai,J. E. Hoelscher,R. E. Sherriff,R. J. Molnar	2000	34
18	UV Schottky-barrier detector development for possible Air Force applications Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Gary A. Smith,Michael J. Estes,J. E. Van Nostrand,Tuoc Dang,Peter J. Schreiber,H. Temkin,J. E. Hoelscher	1999	3
19	Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAs MRS Proceedings ·D. C. Look,J. E. Hoelscher,John T. Grant,C. E. Stutz,K. R. Evans,Muhammad Numan	1991	3
20	FACTORS AFFECTING YIELDS AND UPTAKE OF PHOSPHORUS BY DIFFERENT CROPS Soil Science ·E. O. McLean,J. E. Hoelscher	1954	13

About J. E. Hoelscher

J. E. Hoelscher is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 23 papers that have together received 524 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (7 papers), ZnO doping and properties (7 papers), Ga2O3 and related materials (6 papers), Graphene research and applications (5 papers), Diamond and Carbon-based Materials Research (3 papers), Chalcogenide Semiconductor Thin Films (3 papers) and Quantum Dots Synthesis And Properties (2 papers). The work is most often cited by research in Materials Chemistry (425 citations), Electronic, Optical and Magnetic Materials (148 citations) and Condensed Matter Physics (87 citations). J. E. Hoelscher has collaborated with scholars based in United States and South Korea. Frequent co-authors include D. C. Reynolds, D. C. Look, B. Jogai, R. E. Sherriff, Michael J. Callahan, W. C. Mitchel, T. C. Collins, Lawrence Grazulis, Jeong-Ho Park and Kurt G. Eyink. Their work appears in journals such as Advanced Materials, Nature Communications and Applied Physics Letters.

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