H. Morkoç̌

57.9k citations

1.0k papers · 47.2k indexed · 11 hit papers · h-index 88

Impact in

Condensed Matter Physics top 0.01%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.05%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 497
- GaN-based semiconductor devices and materials 486
Atomic and Molecular Physics, and Optics 576
- Semiconductor Quantum Structures and Devices 491
- Semiconductor materials and interfaces 112
- Quantum and electron transport phenomena 83

Co-authors: M. A. Reshchikov Ümit Özgür V. Avrutin Ya. I. Alivov S. Doğan Ali Teke S. Noor Mohammad Mao Lin
Journals: Applied Physics Letters (217 papers)Journal of Applied Physics (142 papers)Physical review. B, Condensed matter (61 papers)IEEE Transactions on Electron Devices (48 papers)IEEE Electron Device Letters (37 papers)
Partner nations: United States France South Korea

In The Last Decade

H. Morkoç̌

993 papers receiving 45.5k citations

Hit Papers

11 papers align trajectories log scale

ZnO Devices and Applications: A Review of Current Status and Future Prospects 2010 · 694 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2010 Proceedings of the IEEE
2010 Superlattices and Microstructures
2009 Zinc Oxide
2005 Journal of Applied Physics
2005 Journal of Applied Physics
2005 Journal of Materials Science Materials in Electronics
1999 Springer series in materials science
1995 Proceedings of the IEEE
1994 Journal of Applied Physics
1990 Journal of Applied Physics
1985 Physical review. B, Condensed matter

Peers

Countries citing papers authored by H. Morkoç̌

Since Specialization

Citations

This map shows the geographic impact of H. Morkoç̌'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Morkoç̌ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Morkoç̌ more than expected).

Fields of papers citing papers by H. Morkoç̌

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Morkoç̌. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Morkoç̌. The network helps show where H. Morkoç̌ may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Morkoç̌, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Morkoç̌ Line = papers co-authored together H. Morkoç̌ links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Surface properties of MOCVD grown (Al1−xGax)2O3 thin films on c-plane sapphire via scanning Kelvin probe microscopy AIP Advances ·Jeffery Siracuse, Scott Crittenden, Anna-Greta Nylander, 純白井, Dongkyu Lee, G. F. Fueger, 俊明田代, 张中武, V. Avrutin, Ü. Özgür, H. Morkoç̌, Al.-Em. Condoléon	2024	0
2	Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure Applied Physics Letters ·純白井, Jeffery Siracuse, Scott Crittenden, 俊明田代, G. F. Fueger, V. Avrutin, Ü. Özgür, H. Morkoç̌, Al.-Em. Condoléon	2024	2
3	Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures Crystals ·Costandi J. Shahwan, Saloni Sapru, V. Avrutin, N. Izyumskaya, Ümit Özgür, H. Morkoç̌	2024	0
4	MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor Crystals ·純白井, Jeffery Siracuse, Scott Crittenden, Dongkyu Lee, V. Avrutin, Ü. Özgür, H. Morkoç̌, Iftikhar Ahmad	2023	4
5	A Platform for Complementary Metal‐Oxide‐Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer SHILAP Revista de lepidopterología ·Kai Ding, Patrick A. Zumbro, Alexander Kvit, H. Morkoç̌, Nathaniel Kinsey, Ümit Özgür, V. Avrutin	2021	11
6	High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors physica status solidi (RRL) - Rapid Research Letters ·Kai Ding, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç̌, Costandi J. Shahwan, A. Matulionis	2020	12
7	Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence Scientific Reports ·M. A. Reshchikov, J. D. McNamara, Mykyta Toporkov, V. Avrutin, H. Morkoç̌, A. Usikov, H. Helava, Yu.N. Makarov	2016	41
8	Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose Microscopy and Microanalysis ·Andrew B. Yankovich, Alexander Kvit, Xing Li, Fan Zhang, V. Avrutin, Huiyong Liu, N. Izyumskaya, Ümit Özgür, Talapala Venkata Nagaraja, H. Morkoç̌, Paul M. Voyles	2014	10
9	Regrowth of ZnO thin film with high surface flatness and enhanced optical properties on annealed buffer layers by rf sputtering deposition Superlattices and Microstructures ·Chunli Liu, H. Morkoç̌	2010	3
10	Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN physica status solidi (RRL) - Rapid Research Letters ·都子松本, J. Liberis, B.E.A.L. van der Lans, A. Matulionis, M. Wu, H. Morkoç̌	2010	14
11	Strain dependent electron drift velocity in Al_1–xIn_xN/AlN/GaN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G Janssens, Sharon A. Kane, Kwang-Hyung Lee, M. Ramonas, A. Matulionis, Jiulong Xie, M. Wu, Jacob H. Leach, H. Morkoç̌	2009	0
12	Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties Journal of Electronic Materials ·Ya. I. Alivov, Ümit Özgür, Xing Gu, C. Liu, Y. T. Moon, H. Morkoç̌, O. Lopatiuk, Leonid Chernyak, C. W. Litton	2007	3
13	High resolution and analytical electron microscopy of ZnO layers doped with magnetic ions for spintronic applications Optica Applicata ·Lefeng Tao, P. Ruterana, Anatoly Sergeevich Kondratenko, H. Morkoç̌	2006	1
14	A comprehensive review of ZnO materials and devices Journal of Applied Physics ·Ümit Özgür, Ya. I. Alivov, S. Ikom Ratih Pertiwi, Ali Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, Mary C. Rockefeller, H. Morkoç̌ Hit paper breakdown →	2005	9660
15	Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain Applied Physics Letters ·Annika Kottmann, W. B. Wang, Ísis Assis Braga, Feng Yun, Lei He, H. Morkoç̌, Xiaocong Zhou, M. C. Tamargo, R. R. Alfano	2002	73
16	Comprehensive characterization of hydride VPE grown GaN layers and templates Materials Science and Engineering R Reports ·H. Morkoç̌	2001	144
17	Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy Applied Physics Letters ·T. J. Schmidt, Xing Yang, W. Shan, J. J. Song, A. Salvador, W. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	1996	41
18	Principles and technology of MODFETs Wiley eBooks ·H. Morkoç̌, Hilmi Ünlü, Guang‐Fu Ji	1991	40
19	Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors IEEE Transactions on Electron Devices ·Guangjun Gao, (unknown), H. Morkoç̌, D.L. Blackburn	1991	79
20	Excitonic absorption in modulation-doped GaAs/AlxGa1−xAs quantum wells Physical review. B, Condensed matter ·Daming Huang, Heling Chu, Yia‐Chung Chang, R. Houdré, H. Morkoç̌	1988	44

About H. Morkoç̌

H. Morkoç̌ is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 1.0k papers that have together received 47.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (491 papers), GaN-based semiconductor devices and materials (486 papers), Semiconductor materials and devices (397 papers), Ga2O3 and related materials (239 papers), ZnO doping and properties (211 papers), Advancements in Semiconductor Devices and Circuit Design (152 papers), Semiconductor materials and interfaces (112 papers) and Quantum and electron transport phenomena (83 papers). The work is most often cited by research in Condensed Matter Physics (17.1k citations), Electronic, Optical and Magnetic Materials (13.3k citations), Atomic and Molecular Physics, and Optics (17.8k citations), Materials Chemistry (23.6k citations) and Electrical and Electronic Engineering (26.9k citations). H. Morkoç̌ has collaborated with scholars based in United States, France and South Korea. Frequent co-authors include M. A. Reshchikov, Ümit Özgür, V. Avrutin, Ya. I. Alivov, S. Doğan, Ali Teke, S. Noor Mohammad, Mao Lin, R. Fischer and S. Strite. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Physical review. B, Condensed matter, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

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