N. Killat

582 total citations
18 papers, 480 citations indexed

About

N. Killat is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Killat has authored 18 papers receiving a total of 480 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Killat's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (6 papers). N. Killat is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (6 papers). N. Killat collaborates with scholars based in United Kingdom, United States and Slovakia. N. Killat's co-authors include Martin Kuball, James W. Pomeroy, M. Ťapajna, Michael J. Uren, J. L. Jiménez, Tomás Palacios, Marco Silvestri, Denis Marcon, Mustapha Faqir and Tso-Min Chou and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

N. Killat

18 papers receiving 450 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Killat United Kingdom 11 428 385 171 92 66 18 480
Norikazu Nakamura Japan 12 347 0.8× 280 0.7× 127 0.7× 167 1.8× 72 1.1× 31 418
Yuichi Minoura Japan 8 281 0.7× 262 0.7× 84 0.5× 108 1.2× 68 1.0× 19 347
S. Rajasingam United Kingdom 7 328 0.8× 246 0.6× 150 0.9× 44 0.5× 83 1.3× 11 390
Idriss Abid France 8 484 1.1× 388 1.0× 132 0.8× 201 2.2× 112 1.7× 11 554
Omair I. Saadat United States 10 453 1.1× 423 1.1× 128 0.7× 230 2.5× 76 1.2× 17 545
Weijun Luo China 12 317 0.7× 286 0.7× 99 0.6× 148 1.6× 90 1.4× 58 433
O. Svensk Finland 13 304 0.7× 163 0.4× 174 1.0× 112 1.2× 122 1.8× 39 383
Karolina Grabiańska Poland 7 247 0.6× 121 0.3× 116 0.7× 137 1.5× 44 0.7× 18 280
Francesca Danesin Italy 8 775 1.8× 697 1.8× 150 0.9× 241 2.6× 159 2.4× 11 828
Roland B. Simon United Kingdom 6 217 0.5× 235 0.6× 293 1.7× 46 0.5× 22 0.3× 12 392

Countries citing papers authored by N. Killat

Since Specialization
Citations

This map shows the geographic impact of N. Killat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Killat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Killat more than expected).

Fields of papers citing papers by N. Killat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Killat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Killat. The network helps show where N. Killat may publish in the future.

Co-authorship network of co-authors of N. Killat

This figure shows the co-authorship network connecting the top 25 collaborators of N. Killat. A scholar is included among the top collaborators of N. Killat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Killat. N. Killat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Killat, N., et al.. (2018). Resolving trapping effects by scanning microwave microscopy. Microelectronics Reliability. 92. 179–181. 2 indexed citations
2.
Killat, N., et al.. (2017). Determination of doping type by calibrated capacitance scanning microwave microscopy. Microelectronics Reliability. 76-77. 218–221. 7 indexed citations
3.
Killat, N., et al.. (2016). Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale. Microelectronics Reliability. 64. 310–312. 1 indexed citations
4.
Killat, N., James W. Pomeroy, J. L. Jiménez, & Martin Kuball. (2014). Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates. physica status solidi (a). 211(12). 2844–2847. 7 indexed citations
5.
Killat, N., Michael J. Uren, S. Keller, et al.. (2014). Impact ionization in N-polar AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 105(6). 8 indexed citations
6.
Ťapajna, M., N. Killat, V. Palankovski, et al.. (2014). Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 61(8). 2793–2801. 37 indexed citations
7.
Killat, N., Miguel Montes Bajo, T. Paskova, et al.. (2013). Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters. 103(19). 193507–193507. 21 indexed citations
8.
Silvestri, Marco, Michael J. Uren, N. Killat, Denis Marcon, & Martin Kuball. (2013). Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements. Applied Physics Letters. 103(4). 47 indexed citations
9.
Killat, N., et al.. (2013). Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence?. Bristol Research (University of Bristol). 113–116. 1 indexed citations
10.
Ťapajna, M., N. Killat, T. Paskova, et al.. (2012). Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates. IEEE Electron Device Letters. 33(8). 1126–1128. 12 indexed citations
11.
Killat, N., Michael J. Uren, D. J. Wallis, Trevor Martin, & Martin Kuball. (2012). Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping. Applied Physics Letters. 101(15). 15 indexed citations
12.
Killat, N., Miguel Montes Bajo, James W. Pomeroy, et al.. (2012). Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates. IEEE Electron Device Letters. 33(3). 366–368. 48 indexed citations
13.
Hodges, Chris, N. Killat, Stephen W. Kaun, et al.. (2012). Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers. Applied Physics Letters. 100(11). 29 indexed citations
14.
Ťapajna, M., D. Gregušová, K. Čičo, et al.. (2012). Early stage degradation of InAlN/GaN HEMTs during electrical stress. 52. 7–10. 2 indexed citations
15.
Ťapajna, M., et al.. (2011). The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. Microelectronics Reliability. 52(1). 29–32. 18 indexed citations
16.
Killat, N., M. Ťapajna, Mustapha Faqir, Tomás Palacios, & Martin Kuball. (2011). Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier. Electronics Letters. 47(6). 405–406. 33 indexed citations
17.
Killat, N., Martin Kuball, Tso-Min Chou, U. Chowdhury, & J. L. Jiménez. (2010). Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography. 528–531. 32 indexed citations
18.
Pomeroy, James W., et al.. (2010). Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure. IEEE Electron Device Letters. 31(12). 1395–1397. 160 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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