N. Killat

582 citations

18 papers · 480 indexed · h-index 11

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 15
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 10
- Silicon Carbide Semiconductor Technologies 6
- Advancements in Semiconductor Devices and Circuit Design 4
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 4
Materials Chemistry
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 4
Biomedical Engineering
- Near-Field Optical Microscopy 3
Mechanics of Materials
- Metal and Thin Film Mechanics 2

Co-authors: Martin Kuball James W. Pomeroy M. Ťapajna Michael J. Uren J. L. Jiménez Tomás Palacios Marco Silvestri Denis Marcon
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (5 papers)Microelectronics Reliability (4 papers)IEEE Electron Device Letters (3 papers)
Partner nations: United Kingdom United States Slovakia

In The Last Decade

N. Killat

18 papers receiving 450 citations

Peers

Countries citing papers authored by N. Killat

Since Specialization

Citations

This map shows the geographic impact of N. Killat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Killat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Killat more than expected).

Fields of papers citing papers by N. Killat

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Killat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Killat. The network helps show where N. Killat may publish in the future.

Co-authorship network

The 25 scholars most cited alongside N. Killat, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Killat Line = papers co-authored together N. Killat links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Resolving trapping effects by scanning microwave microscopy Microelectronics Reliability ·冰滢胡,N. Killat,Gabriel Dankwah,Sandra L. Kirkpatrick,Franz Kreupl	2018	2
2	Determination of doping type by calibrated capacitance scanning microwave microscopy Microelectronics Reliability ·冰滢胡,N. Killat,Sandra L. Kirkpatrick,Gabriel Dankwah,Franz Kreupl	2017	7
3	Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale Microelectronics Reliability ·冰滢胡,N. Killat,Sandra L. Kirkpatrick,Gabriel Dankwah,D. Schmitt‐Landsiedel,Malvina Silvestri,唐雄民	2016	1
4	Impact ionization in N-polar AlGaN/GaN high electron mobility transistors Applied Physics Letters ·N. Killat,Michael J. Uren,S. Keller,Seshadri Kolluri,Umesh K. Mishra,Martin Kuball	2014	8
5	Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates physica status solidi (a) ·N. Killat,James W. Pomeroy,J. L. Jiménez,Martin Kuball	2014	7
6	Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·M. Ťapajna,N. Killat,V. Palankovski,D. Gregušová,K. Čičo,J.‐F. Carlin,N. Grandjean,Martin Kuball,J. Kuzmı́k	2014	37
7	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat,Miguel Montes Bajo,T. Paskova,K. R. Evans,Jacob H. Leach,X. Li,Ümit Özgür,H. Morkoç̌,Kelson D. Chabak,Antonio Crespo,J. Gillespie,Robert Fitch,M. Khludova,Dennis E. Walker,Manuel Trejo,G. D. Via,J. D. Blevins,Martin Kuball	2013	21
8	Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence? Bristol Research (University of Bristol) ·N. Killat,Michael J. Uren,D. J. Wallis,K. M. Khan,Martin Kuball	2013	1
9	Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements Applied Physics Letters ·Marco Silvestri,Michael J. Uren,N. Killat,Denis Marcon,Martin Kuball	2013	47
10	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna,N. Killat,Vincent Clay,T. Paskova,K. R. Evans,Jacob H. Leach,X. Li,(unknown),H. Morkoç̌,Kelson D. Chabak,Antonio Crespo,J. Gillespie,Robert Fitch,M. Khludova,Dennis E. Walker,Manuel Trejo,G. D. Via,J. D. Blevins,Martin Kuball	2012	12
11	Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers Applied Physics Letters ·Chris Hodges,N. Killat,Stephen W. Kaun,Man Hoi Wong,Feng Gao,Tomás Palacios,U. K. Mishra,James S. Speck,D. Wolverson,Martin Kuball	2012	29
12	Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping Applied Physics Letters ·N. Killat,Michael J. Uren,D. J. Wallis,Trevor Martin,Martin Kuball	2012	15
13	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat,Miguel Montes Bajo,James W. Pomeroy,T. Paskova,K. R. Evans,Jacob H. Leach,X. Li,(unknown),H. Morkoç̌,Kelson D. Chabak,Antonio Crespo,J. Gillespie,Robert Fitch,M. Khludova,Dennis E. Walker,Manuel Trejo,G. D. Via,J. D. Blevins,Martin Kuball	2012	48
14	Early stage degradation of InAlN/GaN HEMTs during electrical stress M. Ťapajna,D. Gregušová,K. Čičo,J. Fedor,J.‐F. Carlin,N. Grandjean,N. Killat,Martin Kuball,J. Kuzmı́k	2012	2
15	The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability Microelectronics Reliability ·M. Ťapajna,N. Killat,Cristina Manzuoli,J. L. Jiménez,Martin Kuball	2011	18
16	Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier Electronics Letters ·N. Killat,M. Ťapajna,Mustapha Faqir,Tomás Palacios,Martin Kuball	2011	33
17	Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography N. Killat,Martin Kuball,Tso-Min Chou,U. Chowdhury,J. L. Jiménez	2010	32
18	Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure IEEE Electron Device Letters ·A. Kabelkaito,James W. Pomeroy,N. Killat,Martin Kuball	2010	160

About N. Killat

N. Killat is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 18 papers that have together received 480 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (10 papers), Silicon Carbide Semiconductor Technologies (6 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor Quantum Structures and Devices (4 papers), Ga2O3 and related materials (4 papers), Near-Field Optical Microscopy (3 papers) and Metal and Thin Film Mechanics (2 papers). The work is most often cited by research in Condensed Matter Physics (428 citations), Electrical and Electronic Engineering (385 citations), Electronic, Optical and Magnetic Materials (92 citations), Materials Chemistry (171 citations) and Atomic and Molecular Physics, and Optics (66 citations). N. Killat has collaborated with scholars based in United Kingdom, United States and Slovakia. Frequent co-authors include Martin Kuball, James W. Pomeroy, M. Ťapajna, Michael J. Uren, J. L. Jiménez, Tomás Palacios, Marco Silvestri, Denis Marcon, Mustapha Faqir and Tso-Min Chou. Their work appears in journals such as Applied Physics Letters, Microelectronics Reliability, IEEE Electron Device Letters, physica status solidi (a) and Electronics Letters.

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