W.L. Pribble

2.0k total citations · 2 hit papers
21 papers, 1.6k citations indexed

About

W.L. Pribble is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W.L. Pribble has authored 21 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W.L. Pribble's work include GaN-based semiconductor devices and materials (15 papers), Silicon Carbide Semiconductor Technologies (14 papers) and Radio Frequency Integrated Circuit Design (14 papers). W.L. Pribble is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Silicon Carbide Semiconductor Technologies (14 papers) and Radio Frequency Integrated Circuit Design (14 papers). W.L. Pribble collaborates with scholars based in United States, China and United Kingdom. W.L. Pribble's co-authors include S.T. Sheppard, J. Milligan, Simon M. Wood, Raymond S. Pengelly, John W. Palmour, Scott T. Allen, K. Doverspike, L. Kehias, T. Jenkins and R.P. Smith and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and IEEE Microwave Magazine.

In The Last Decade

W.L. Pribble

21 papers receiving 1.5k citations

Hit Papers

A Review of GaN on SiC High Electron-Mobilit... 1999 2026 2008 2017 2012 1999 250 500 750
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
    2012 780 citations Raymond S. Pengelly, Simon M. Wood et al. IEEE Transactions on Microwave Theory and Techniques profile →
  2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
    1999 462 citations S.T. Sheppard, K. Doverspike et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.L. Pribble United States 13 1.3k 1.3k 344 334 242 21 1.6k
K. Joshin Japan 24 1.6k 1.2× 1.0k 0.8× 305 0.9× 503 1.5× 197 0.8× 94 1.8k
S. Vicknesh Singapore 19 732 0.6× 748 0.6× 396 1.2× 259 0.8× 224 0.9× 47 1.0k
G. D. Via United States 25 1.2k 0.9× 1.2k 0.9× 508 1.5× 309 0.9× 366 1.5× 67 1.5k
Toshihiro Ohki Japan 20 1.2k 0.9× 1.1k 0.8× 463 1.3× 280 0.8× 222 0.9× 96 1.4k
T. Kikkawa Japan 22 1.3k 1.0× 1.3k 1.0× 498 1.4× 334 1.0× 258 1.1× 80 1.6k
J. Milligan United States 8 866 0.7× 822 0.6× 181 0.5× 197 0.6× 144 0.6× 13 1.0k
J.A. Roussos United States 18 974 0.7× 1.1k 0.9× 498 1.4× 290 0.9× 320 1.3× 49 1.3k
Likun Shen United States 12 1.3k 1.0× 1.7k 1.3× 706 2.1× 461 1.4× 419 1.7× 26 1.9k
K. Tsuda Japan 20 1.4k 1.0× 1.4k 1.1× 611 1.8× 348 1.0× 242 1.0× 57 1.7k
J. Gillespie United States 25 1.2k 0.9× 1.4k 1.1× 584 1.7× 320 1.0× 399 1.6× 79 1.7k

Countries citing papers authored by W.L. Pribble

Since Specialization
Citations

This map shows the geographic impact of W.L. Pribble's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.L. Pribble with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.L. Pribble more than expected).

Fields of papers citing papers by W.L. Pribble

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.L. Pribble. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.L. Pribble. The network helps show where W.L. Pribble may publish in the future.

Co-authorship network of co-authors of W.L. Pribble

This figure shows the co-authorship network connecting the top 25 collaborators of W.L. Pribble. A scholar is included among the top collaborators of W.L. Pribble based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.L. Pribble. W.L. Pribble is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pengelly, Raymond S., et al.. (2014). Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]. IEEE Microwave Magazine. 15(6). 134–147. 3 indexed citations
2.
Pengelly, Raymond S., Simon M. Wood, J. Milligan, S.T. Sheppard, & W.L. Pribble. (2012). A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs. IEEE Transactions on Microwave Theory and Techniques. 60(6). 1764–1783. 780 indexed citations breakdown →
3.
Wood, Simon M., et al.. (2009). Thermal analysis and its application to high power GaN HEMT amplifiers. 917–920. 52 indexed citations
4.
Smith, R.P., S.T. Sheppard, Yifeng Wu, et al.. (2008). AlGaN/GaN-on-SiC HEMT Technology Status. 1–4. 16 indexed citations
5.
Milligan, J., et al.. (2008). SiC and GaN Wide Bandgap Technology Commercial Status. 6 indexed citations
6.
Milligan, J., S.T. Sheppard, W.L. Pribble, et al.. (2007). SiC and GaN Wide Bandgap Device Technology Overview. 36 indexed citations
7.
Trew, R.J., Umesh K. Mishra, W.L. Pribble, & J.F. Jensen. (2003). A parameter extraction technique for heterojunction bipolar transistors. IEEE MTT-S International Microwave Symposium digest. 897–900. 6 indexed citations
8.
Palmour, John W., Scott T. Allen, S.T. Sheppard, et al.. (2003). Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates. 38–41. 6 indexed citations
9.
Pribble, W.L., John W. Palmour, S.T. Sheppard, et al.. (2003). Applications of SiC MESFETs and GaN HEMTs in power amplifier design. 3. 1819–1822. 56 indexed citations
10.
Allen, Scott T., et al.. (2003). Progress in high power SiC microwave MESFETs. 1. 321–324. 30 indexed citations
11.
Sheppard, S.T., R.P. Smith, W.L. Pribble, et al.. (2003). High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates. 175–178. 14 indexed citations
12.
Sadler, R.A., et al.. (2002). SiC MESFET hybrid amplifier with 30-W output power at 10 GHz. 173–177. 15 indexed citations
13.
Sheppard, S.T., W.L. Pribble, R.P. Smith, et al.. (2002). Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates. 232–236. 14 indexed citations
14.
Pribble, W.L. & E. L. Griffin. (2002). An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency. 25–28. 3 indexed citations
15.
Palmour, John W., S.T. Sheppard, R.P. Smith, et al.. (2002). Wide bandgap semiconductor devices and MMICs for RF power applications. 17.4.1–17.4.4. 65 indexed citations
16.
Sheppard, S.T., et al.. (2002). High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers. 37–38. 13 indexed citations
17.
Sadler, R.A., Scott T. Allen, W.L. Pribble, et al.. (2002). SiC MESFET with output power of 50 watts CW at S-band. 92–93. 9 indexed citations
18.
Sheppard, S.T., et al.. (2000). Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide. Materials science forum. 338-342. 1643–1646. 3 indexed citations
19.
Sheppard, S.T., K. Doverspike, W.L. Pribble, et al.. (1999). High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates. IEEE Electron Device Letters. 20(4). 161–163. 462 indexed citations breakdown →
20.
Allen, Scott T., et al.. (1999). Recent Progress in SiC Microwave MESFETs. MRS Proceedings. 572. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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