James W. Pomeroy
Impact in
- Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
- Materials Chemistry top 2%
- Thermal properties of materials
- ZnO doping and properties
- Diamond and Carbon-based Materials Research
Papers in
-
- GaN-based semiconductor devices and materials 87
-
- Thermal properties of materials 44
- ZnO doping and properties 21
- Co-authors
- Martin KuballMichael J. UrenHuarui SunTrevor MartinDaniel FrancisFirooz FailiRoland B. SimonDaniel J. Twitchen
- Journals
- IEEE Electron Device Letters (16 papers)Applied Physics Letters (13 papers)IEEE Transactions on Electron Devices (8 papers)Journal of Applied Physics (6 papers)ACS Applied Electronic Materials (6 papers)
- Partner nations
- United KingdomUnited StatesFrance
In The Last Decade
James W. Pomeroy
133 papers receiving 3.2k citations
Peers
Comparison fields: 5 of 61
- Condensed Matter Physics 1.9k
- Materials Chemistry 2.0k
- Electronic, Optical and Magnetic Materials 626
- Electrical and Electronic Engineering 1.9k
- Mechanics of Materials 534
Countries citing papers authored by James W. Pomeroy
This map shows the geographic impact of James W. Pomeroy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James W. Pomeroy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James W. Pomeroy more than expected).
Fields of papers citing papers by James W. Pomeroy
This network shows the impact of papers produced by James W. Pomeroy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James W. Pomeroy. The network helps show where James W. Pomeroy may publish in the future.
Co-authors
The 25 scholars most cited alongside James W. Pomeroy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 2 | |
| 2 | 2025 | 1 | |
| 3 | 2025 | 5 | |
| 4 | 2024 | 0 | |
| 5 | 2024 | 7 | |
| 6 | 2024 | 2 | |
| 7 | 2024 | 3 | |
| 8 | 2023 | 19 | |
| 9 | 2023 | 4 | |
| 10 | 2023 | 0 | |
| 11 | 2023 | 24 | |
| 12 | 2022 | 14 | |
| 13 | 2021 | 24 | |
| 14 | 2019 | 24 | |
| 15 | 2019 | 35 | |
| 16 | 2016 | 33 | |
| 17 | 2016 | 105 | |
| 18 | Novel thermal management and its analysis in GaN electronics | 2014 | 1 |
| 19 | 15th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore July 2008 | 2008 | 2 |
| 20 | 2003 | 2 |
About James W. Pomeroy
James W. Pomeroy is a scholar working on Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 138 papers that have together received 3.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (87 papers), Silicon Carbide Semiconductor Technologies (50 papers), Thermal properties of materials (44 papers), Semiconductor materials and devices (32 papers), Ga2O3 and related materials (21 papers), ZnO doping and properties (21 papers), Semiconductor Quantum Structures and Devices (20 papers) and Metal and Thin Film Mechanics (15 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Materials Chemistry (2.0k citations), Electronic, Optical and Magnetic Materials (626 citations), Electrical and Electronic Engineering (1.9k citations) and Mechanics of Materials (534 citations). James W. Pomeroy has collaborated with scholars based in United Kingdom, United States and France. Frequent co-authors include Martin Kuball, Michael J. Uren, Huarui Sun, Trevor Martin, Daniel Francis, Firooz Faili, Roland B. Simon, Daniel J. Twitchen, N. Killat and K.P. Hilton. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and ACS Applied Electronic Materials.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.