X. Li

454 citations

34 papers · 347 indexed · h-index 12

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Electronic, Optical and Magnetic Materials 12
- Ga2O3 and related materials 12

Co-authors: H. Morkoç̌X. Ni V. Avrutin Ü. Özgür Jacob H. Leach M. Wu Ümit Özgür K. R. Evans
Journals: Applied Physics Letters (4 papers)physica status solidi (a) (3 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
Partner nations: United States Lithuania China

In The Last Decade

X. Li

29 papers receiving 330 citations

Peers

Countries citing papers authored by X. Li

Since Specialization

Citations

This map shows the geographic impact of X. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Li more than expected).

Fields of papers citing papers by X. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Li. The network helps show where X. Li may publish in the future.

Co-authorship network

The 25 scholars most cited alongside X. Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with X. Li Line = papers co-authored together X. Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Biomechanical analysis on mandibular anterior teeth during unilateral mandibular molar Protraction with different movement patterns: a finite element analysis BMC Oral Health ·Megan Deming, Chenzhi Li, Aihong PAN, Xiangjun Li, X. Li, Wenli Huang, Émelin Alves dos Santos, Qıang Zhang, Danoe Kusumah Ramadhan, Xiao Yuan	2025	0
2	Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·R. Poettgen, X. Li, Chun‐Xiang Guo, Сергей Хамзеевич Ляпин, Larry Hulbert, Shiwei Zhuang	2023	2
3	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	21
4	InGaN based multi-double heterostructure light-emitting diodes with electron injector layers Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Fan Zhang, J. Kumagal, X. Li, Serdal Okur, V. Avrutin, Ümit Özgür, H. Morkoç̌	2013	0
5	Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·محمد الهادی, X. Li, Fan Zhang, V. Avrutin, N. Izyumskaya, Ümit Özgür, Andrew B. Yankovich, A. Kvit, Paul M. Voyles, H. Morkoç	2012	2
6	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Vincent Clay, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
7	Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T. Malinauskas, A. Kadys, M SALA, Saulius Nargelas, M. Spuij, S. Miasojedovas, Marc-Olivier Laurent, José Castaño Rubiales, Jan Čížek, Mikas Vengris, Serdal Okur, V. Avrutin, X. Li, Fan Zhang, Ü. Özgür, H. Morkoç	2012	8
8	<title>The impact of active layer design on quantum efficiency of InGaN light emitting diodes</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Fan Zhang, X. Li, Serdal Okur, V. Avrutin, Ü. Özgür, H. Morkoç̌, Wang xingfang, Mustatab Wahedi Hussain, Ta-Cheng Hsu, A. Matulionis	2012	0
9	Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects Applied Physics Letters ·Jaan Õispuu, M. Wu, Gunnar Gombert, Fan Zhang, X. Li, Gustav Steinbrink, A. Matulionis, V. Avrutin, Ümit Özgür, H. Morkoç̌	2012	12
10	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat, Miguel Montes Bajo, James W. Pomeroy, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	48
11	Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Andrew B. Yankovich, A. Kvit, X. Li, Fan Zhang, V. Avrutin, محمد الهادی, Sahar Abdullah Mansur, Ümit Özgür, H. Morkoç̌, Paul M. Voyles	2011	2
12	Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Gunnar Gombert, Jacob H. Leach, Jaan Õispuu, Ashley Kilchenmann, X. Li, Ü. Özgür, H. Morkoç̌, Xiangyu Yang, Veena Misra, Peter Händel	2011	5
13	Impact of ballistic electron transport on efficiency of InGaN based LEDs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Fan Zhang, X. Li, Enzo Banto Bissoli, Serdal Okur, V. Avrutin, Ü. Özgür, H. Morkoç̌, A. Matulionis, Mikhail V. Kisin	2011	1
14	On the reduction of efficiency loss in polar c ‐plane and non‐polar m ‐plane InGaN light emitting diodes Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·X. Li, X. Ni, محمد الهادی, Fan Zhang, Enzo Banto Bissoli, 김명현, V. Avrutin, Ü. Özgür, T. Paskova, Hany Hany Aziz Fahmy Fahmy, K. R. Evans, H. Morkoç̌	2011	7
15	InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide physica status solidi (a) ·X. Li, محمد الهادی, Enzo Banto Bissoli, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ümit Özgür, H. Morkoç̌	2010	18
16	Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics ·Jacob H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç̌, Lin Zhou, David A. Cullen, David J. Smith, Lozano A. Romero, Çağlıyan Kurdak, J. R. Meyer, I. Vurgaftman	2010	15
17	Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Superlattices and Microstructures ·X. Ni, X. Li, 김명현, Enzo Banto Bissoli, V. Avrutin, John True, Ümit Özgür, H. Morkoç̌	2010	28
18	Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters ·Jacob H. Leach, Jaan Õispuu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ümit Özgür, H. Morkoç, J. Liberis, D. V. Bambill, A. Matulionis, T. Paskova, Edward A. Preble, K. R. Evans	2010	21
19	Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures physica status solidi (a) ·Jacob H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç̌	2009	18
20	Reduction of efficiency droop in InGaN-based blue LEDs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·X. Ni, X. Li, Jun Xie, Wilson Ashby, Rintaro Shimada, Ü. Özgür, H. Morkoç̌	2009	5

About X. Li

X. Li is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Complementary and Manual Therapy, Mechanics of Materials and Electrical and Electronic Engineering, having authored 34 papers that have together received 347 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (12 papers), ZnO doping and properties (10 papers), Semiconductor Quantum Structures and Devices (8 papers), Metal and Thin Film Mechanics (8 papers), Photocathodes and Microchannel Plates (3 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (315 citations), Electronic, Optical and Magnetic Materials (116 citations), Atomic and Molecular Physics, and Optics (122 citations), Electrical and Electronic Engineering (172 citations) and Materials Chemistry (127 citations). X. Li has collaborated with scholars based in United States, Lithuania and China. Frequent co-authors include H. Morkoç̌, X. Ni, V. Avrutin, Ü. Özgür, Jacob H. Leach, M. Wu, Ümit Özgür, K. R. Evans, Fan Zhang and H. Morkoç. Their work appears in journals such as Applied Physics Letters, physica status solidi (a), IEEE Electron Device Letters, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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