J. Gillespie

2.1k total citations
79 papers, 1.7k citations indexed

About

J. Gillespie is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Gillespie has authored 79 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 58 papers in Condensed Matter Physics and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Gillespie's work include GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (25 papers). J. Gillespie is often cited by papers focused on GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (25 papers). J. Gillespie collaborates with scholars based in United States, United Kingdom and Japan. J. Gillespie's co-authors include Robert Fitch, Antonio Crespo, G. D. Via, Gregg H. Jessen, Manuel Trejo, Kelson D. Chabak, Dennis E. Walker, T. Jenkins, Derrick Langley and F. Ren and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Gillespie

71 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Gillespie United States 25 1.4k 1.2k 584 399 320 79 1.7k
F. Shahedipour‐Sandvik United States 19 1.0k 0.7× 537 0.4× 517 0.9× 533 1.3× 217 0.7× 102 1.3k
V. Kumar United States 23 1.6k 1.1× 1.3k 1.1× 598 1.0× 351 0.9× 541 1.7× 66 1.9k
I. Daumiller Germany 16 1.1k 0.8× 798 0.6× 401 0.7× 370 0.9× 338 1.1× 41 1.3k
K. S. Boutros United States 24 1.7k 1.3× 1.4k 1.1× 705 1.2× 389 1.0× 479 1.5× 67 2.0k
D. Gregušová Slovakia 23 1.2k 0.9× 1.2k 1.0× 729 1.2× 361 0.9× 373 1.2× 113 1.6k
E. Born Germany 12 882 0.6× 519 0.4× 437 0.7× 648 1.6× 441 1.4× 24 1.5k
Farid Medjdoub France 28 2.3k 1.7× 1.8k 1.4× 1.1k 1.8× 492 1.2× 575 1.8× 113 2.5k
G. Cywiński Poland 20 616 0.4× 570 0.5× 335 0.6× 449 1.1× 594 1.9× 117 1.3k
A. Koudymov United States 24 1.6k 1.1× 1.4k 1.1× 734 1.3× 318 0.8× 310 1.0× 53 1.8k
G. Dang United States 21 1.1k 0.8× 1.2k 1.0× 433 0.7× 321 0.8× 584 1.8× 67 1.6k

Countries citing papers authored by J. Gillespie

Since Specialization
Citations

This map shows the geographic impact of J. Gillespie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Gillespie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Gillespie more than expected).

Fields of papers citing papers by J. Gillespie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Gillespie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Gillespie. The network helps show where J. Gillespie may publish in the future.

Co-authorship network of co-authors of J. Gillespie

This figure shows the co-authorship network connecting the top 25 collaborators of J. Gillespie. A scholar is included among the top collaborators of J. Gillespie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Gillespie. J. Gillespie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Reynolds, C. L., J. G. Reynolds, Antonio Crespo, et al.. (2013). Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures. Journal of materials research/Pratt's guide to venture capital sources. 28(13). 1687–1691. 9 indexed citations
3.
Pavlidis, Spyridon, Peter Song, Wasif Tanveer Khan, et al.. (2013). A hybrid GaN/organic X-band transmitter module. 43. 241–243. 4 indexed citations
4.
Killat, N., Miguel Montes Bajo, T. Paskova, et al.. (2013). Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters. 103(19). 193507–193507. 21 indexed citations
5.
Ťapajna, M., N. Killat, T. Paskova, et al.. (2012). Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates. IEEE Electron Device Letters. 33(8). 1126–1128. 12 indexed citations
6.
Chabak, Kelson D., Manuel Trejo, Antonio Crespo, et al.. (2010). Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency. IEEE Electron Device Letters. 31(6). 561–563. 25 indexed citations
7.
Crespo, Antonio, Kelson D. Chabak, J. Gillespie, et al.. (2010). High frequency performance of Ga free barrier AlInN/GaN HEMT. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2433–2435. 2 indexed citations
8.
Guo, Shiping, Xiang Gao, Han Wang, et al.. (2010). AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications. physica status solidi (a). 207(6). 1348–1352. 25 indexed citations
9.
Lin, Jenshan, Soohwan Jang, F. Ren, et al.. (2007). Analysis and design of AlGaN/GaN HEMT resistive mixers. Microwave and Optical Technology Letters. 49(5). 1152–1154. 8 indexed citations
10.
Lin, Jenshan, Ashok Kumar Verma, F. Ren, et al.. (2006). High-efficiency GaN/AlGaN HEMT oscillator operating at L-band. 83. 631–634. 7 indexed citations
11.
Crespo, Antonio, et al.. (2003). Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs. 14(6). 1178–82. 2 indexed citations
12.
Ren, F., B. Luo, J. Kim, et al.. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. MRS Proceedings. 764. 1 indexed citations
13.
Jessen, Gregg H., Robert Fitch, J. Gillespie, et al.. (2003). Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters. 83(3). 485–487. 10 indexed citations
14.
Jessen, Gregg H., Robert Fitch, J. Gillespie, et al.. (2003). High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC. IEEE Electron Device Letters. 24(11). 677–679. 15 indexed citations
15.
Reynolds, D. C., J. E. Hoelscher, C. W. Litton, et al.. (2003). Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures. Journal of Applied Physics. 94(7). 4263–4266. 1 indexed citations
16.
17.
Bozada, C., G. DeSalvo, R. Dettmer, et al.. (1997). “Safe” solvent resist process for sub-quarter micron T-gates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2916–2920. 2 indexed citations
18.
Anholt, R., C. Bozada, G. DeSalvo, et al.. (1997). Base and collector resistances in heterojunction bipolar transistors. Solid-State Electronics. 41(11). 1739–1743. 2 indexed citations
19.
Anholt, R., et al.. (1991). Relationship between process and materials variations and variations in S‐ and equivalent‐circuit parameters. International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering. 1(3). 271–281. 4 indexed citations
20.
Sizelove, J. R., J. Gillespie, Tyll Krueger, et al.. (1991). Overview of MIMIC Phase I Material/Device Correlation Study. Journal of Bioresource Management. 331.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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