J. Gillespie

2.1k citations

79 papers · 1.7k indexed · h-index 25

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 58
- GaN-based semiconductor devices and materials 58
Electronic, Optical and Magnetic Materials 25
- Ga2O3 and related materials 25

Co-authors: Robert Fitch Antonio Crespo G. D. Via Gregg H. Jessen Manuel Trejo Kelson D. Chabak Dennis E. Walker T. Jenkins
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Letters (10 papers)Solid-State Electronics (10 papers)Journal of The Electrochemical Society (3 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (3 papers)
Partner nations: United States United Kingdom Japan

In The Last Decade

J. Gillespie

71 papers receiving 1.6k citations

Peers

Countries citing papers authored by J. Gillespie

Since Specialization

Citations

This map shows the geographic impact of J. Gillespie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Gillespie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Gillespie more than expected).

Fields of papers citing papers by J. Gillespie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Gillespie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Gillespie. The network helps show where J. Gillespie may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Gillespie, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Gillespie Line = papers co-authored together J. Gillespie links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process IEEE Electron Device Letters ·Robert Fitch, Dennis E. Walker, Andrew J. Green, Stephen E. Tetlak, J. Gillespie, Ryan Gilbert, 小西省三郎, S. Otto, Raúl Jiménez-Castaño, G. D. Via, Kelson D. Chabak, Gregg H. Jessen	2015	50
2	Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures Journal of materials research/Pratt's guide to venture capital sources ·C. L. Reynolds, J. G. Reynolds, Antonio Crespo, J. Gillespie, Kelson D. Chabak, R. F. Davis	2013	9
3	A hybrid GaN/organic X-band transmitter module Spyridon Pavlidis, A. H. Tweit, Peter Song, Wasif Tanveer Khan, Robert Fitch, J. Gillespie, 亜希子望月, T. Quach, John Papapolymerou	2013	4
4	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	21
5	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Vincent Clay, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
6	Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency IEEE Electron Device Letters ·Kelson D. Chabak, Manuel Trejo, Antonio Crespo, Dennis E. Walker, Jinwei Yang, R. Gaška, M. Khludova, J. Gillespie, Gregg H. Jessen, Virginia Trimble, G. D. Via	2010	25
7	High frequency performance of Ga free barrier AlInN/GaN HEMT Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Antonio Crespo, Zang Ping, Kelson D. Chabak, J. Gillespie, Gregg H. Jessen, M. Khludova, J P Liu, Manuel Trejo, G. D. Via, Narain As, H. E. SMITH, Dennis E. Walker, Maria Clara Z Zontin, Xiaoqin Gao, Shiping Guo	2010	2
8	AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications physica status solidi (a) ·Shiping Guo, Xiang Gao, André Hiratsuka, Osita Echieobi, Han Wang, Tomás Palacios, Antonio Crespo, J. Gillespie, Kelson D. Chabak, Manuel Trejo, L. Labidi, J. Knollenberg, G. D. Via, M. Khludova, Howard E. Smith, D. H. Tomich	2010	25
9	Analysis and design of AlGaN/GaN HEMT resistive mixers Microwave and Optical Technology Letters ·杨词银 YANG Ci-yin, Michel Guay, Jenshan Lin, Soohwan Jang, F. Ren, S. J. Pearton, Robert Fitch, J. Gillespie	2007	8
10	High-efficiency GaN/AlGaN HEMT oscillator operating at L-band Raden Gunawan, Michel Guay, Jenshan Lin, Ashok Kumar Verma, Anđela Ban, F. Ren, S. J. Pearton, Robert Fitch, J. Gillespie	2006	7
11	Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs Antonio Crespo, Robert Fitch, J. Gillespie, Neil Moser, G. D. Via, 舘野正夫	2003	2
12	Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface MRS Proceedings ·F. Ren, B. Luo, J. Kim, R. Mehandru, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2003	1
13	Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, B. D. White, S. Bradley, Dennis E. Walker, L. J. Brillson	2003	10
14	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Neil Moser, 舘野正夫, Antonio Crespo, J. Sewell, R. Dettmer, T. Jenkins, R. F. Davis, Jinwei Yang, M.A. Khan, S.C. Binari	2003	15
15	Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures Journal of Applied Physics ·D. C. Reynolds, J. E. Hoelscher, C. W. Litton, T. C. Collins, Robert Fitch, G. D. Via, J. Gillespie, A. Crespo, T. Jenkins, A. Saxler	2003	1
16	Xs-MET, a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications أسماء عبد المنعم المهر, D. Via, J. Ebel, H. Bouchard, T. Quach, C. Bozada, R. Dettmer, J. Gillespie, T. Jenkins, C. Pettiford, J. Sewell, Caitlin Sheehy, Pramoda Vithanage, James Lyke	2002	0
17	“Safe” solvent resist process for sub-quarter micron T-gates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Jiahong Jiang, C. Bozada, أسماء عبد المنعم المهر, G. DeSalvo, R. Dettmer, J. Ebel, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J. Sewell	1997	2
18	Base and collector resistances in heterojunction bipolar transistors Solid-State Electronics ·R. Anholt, C. Bozada, G. DeSalvo, R. Dettmer, J. Ebel, J. Gillespie, T. Jenkins, Zheng-Wei Xu, C. Ito, K. Nakano, C. Pettiford, T. Quach, J. Sewell, D. Via	1997	2
19	Relationship between process and materials variations and variations in S‐ and equivalent‐circuit parameters International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering ·R. Anholt, Elden R. Rand, Flávia Gabe Beltrami, J. Gillespie	1991	4
20	Overview of MIMIC Phase I Material/Device Correlation Study Journal of Bioresource Management ·Thomas C. Van Cleve, D LIBERMAN, J. R. Sizelove, J. Gillespie, Tyll Krueger, 张赫鹏, Jerram L. Brown, S. E. Cummins, D. C. Look	1991	0

About J. Gillespie

J. Gillespie is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Structural Biology and Mechanics of Materials, having authored 79 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers), Ga2O3 and related materials (25 papers), Radio Frequency Integrated Circuit Design (21 papers), Silicon Carbide Semiconductor Technologies (13 papers), Metal and Thin Film Mechanics (11 papers), Semiconductor Quantum Structures and Devices (9 papers) and Acoustic Wave Resonator Technologies (8 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (584 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (320 citations) and Mechanics of Materials (247 citations). J. Gillespie has collaborated with scholars based in United States, United Kingdom and Japan. Frequent co-authors include Robert Fitch, Antonio Crespo, G. D. Via, Gregg H. Jessen, Manuel Trejo, Kelson D. Chabak, Dennis E. Walker, T. Jenkins, Derrick Langley and F. Ren. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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