J. D. Blevins

1.1k citations

17 papers · 471 indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 8
- GaN-based semiconductor devices and materials 8
Ceramics and Composites 2

Co-authors: Greg Foundos K. T. Stevens G. D. Via Adam C. Lindsey G.T. Heydt Craig D. McGray José Díaz Ray Kallaher
Journals: IEEE Electron Device Letters (2 papers)Applied Physics Letters (2 papers)IEEE Transactions on Semiconductor Manufacturing (2 papers)Journal of Applied Physics (1 paper)Simulation Modelling Practice and Theory (1 paper)
Partner nations: United States United Kingdom Slovakia

In The Last Decade

J. D. Blevins

17 papers receiving 441 citations

Peers

Countries citing papers authored by J. D. Blevins

Since Specialization

Citations

This map shows the geographic impact of J. D. Blevins's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. D. Blevins with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. D. Blevins more than expected).

Fields of papers citing papers by J. D. Blevins

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. D. Blevins. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. D. Blevins. The network helps show where J. D. Blevins may publish in the future.

Co-authors

The 25 scholars most cited alongside J. D. Blevins, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. D. Blevins Line = papers co-authored together J. D. Blevins links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	Structural stability of β -Ga2O3 under ion irradiation Applied Physics Letters ·Terry McNavage, D. Cherns, Wei‐Ying Chen, Junliang Liu, J. D. Blevins, Vincent Gambin, Meimei Li, Dong Liu, Martin Kuball	2022	17
2	Development of a World Class Silicon Carbide Substrate Manufacturing Capability IEEE Transactions on Semiconductor Manufacturing ·J. D. Blevins	2020	17
3	Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor Journal of Applied Physics ·А.Е. Верниковская, N. C. Giles, Naima T. Wong, B. E. Kananen, L. E. Halliburton, K. T. Stevens, Greg Foundos, J. D. Blevins, Donald L. Dorsey, Shin Mou	2019	42
4	Development of Large Diameter Semi-Insulating Gallium Oxide (Ga₂O₃) Substrates IEEE Transactions on Semiconductor Manufacturing ·J. D. Blevins, K. T. Stevens, Adam C. Lindsey, Greg Foundos, Lynn Reuss	2019	87
5	GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz MRS Advances ·P.C. Chao, Rita Kuczynski, José Díaz, Szilárd Pothorszky, Marie-Louise Cordillot, Ray Kallaher, Craig D. McGray, G. D. Via, J. D. Blevins	2016	27
6	Prospects for Gallium Nitride-on-Diamond Transistors J. D. Blevins, G. D. Via	2016	4
7	High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process Muhammad Chishty, P.C. Chao, José Díaz, X BESSA, Baihaqie Ndaru Findarto, Szilárd Pothorszky, Marie-Louise Cordillot, Robert Gennis, Craig D. McGray, G. D. Via, J. D. Blevins	2015	16
8	Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz IEEE Transactions on Electron Devices ·Cristiane Carvalho de Paula Brito, Muhammad Chishty, Szilárd Pothorszky, José Díaz, S Rafiuddin, M. S. Shur, Ray Kallaher, Craig D. McGray, G. D. Via, J. D. Blevins	2015	85
9	Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. D. Via, P G Than, J. D. Blevins, Kelson D. Chabak, Gregg H. Jessen, J. Gillespie, Robert Fitch, Antonio Crespo, 小西省三郎, Carol Fritz-Gibbon, Stephen E. Tetlak, Ryan Gilbert, Maria Clara Z Zontin, J. C. Westmoreland, James W. Pomeroy, M. Kuball, Joseph Maurer, Avram Bar‐Cohen	2014	28
10	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	21
11	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Vincent Clay, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
12	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat, Miguel Montes Bajo, James W. Pomeroy, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	48
13	Development of a Manufacturing Process for Large Diameter Semi-Insulating Silicon Carbide Substrates J. D. Blevins, Yousuke IDESHITA, Tae Gyung Kim, Thomas A. Anderson, Farheen Basith	2011	1
14	Simulation based considerations in placement of capacitors near a dynamic voltage restorer Simulation Modelling Practice and Theory ·Siddharth Suryanarayanan, G.T. Heydt, Raja Ayyanar, J. D. Blevins, Paul Aakib Hussain	2008	1
15	Potential economic impact of fault currents contributed by distributed generation IEEE Power Engineering Society General Meeting, 2005 ·Luis 1852-1914 Suñé y Molist, G.T. Heydt, J. D. Blevins, Nikolaj N. Vechkanov	2005	14
16	The propagation of disturbances in power distribution systems Luis 1852-1914 Suñé y Molist, G.T. Heydt, Raja Ayyanar, J. D. Blevins, Wai-Hei Chan, Pattra Plubcharoensook, Michael Chandler	2004	3
17	The design of power acceptability curves IEEE Transactions on Power Delivery ·Christine Gooding, Raja Ayyanar, G.T. Heydt, R.S. Thallam, J. D. Blevins	2002	48

About J. D. Blevins

J. D. Blevins is a scholar working on Condensed Matter Physics, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Renewable Energy, Sustainability and the Environment, having authored 17 papers that have together received 471 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (8 papers), GaN-based semiconductor devices and materials (8 papers), Semiconductor materials and devices (5 papers), Ga2O3 and related materials (4 papers), Metal and Thin Film Mechanics (3 papers), ZnO doping and properties (3 papers), Power Quality and Harmonics (3 papers) and Advanced Photocatalysis Techniques (2 papers). The work is most often cited by research in Condensed Matter Physics (184 citations), Electronic, Optical and Magnetic Materials (201 citations), Renewable Energy, Sustainability and the Environment (93 citations), Materials Chemistry (246 citations) and Electrical and Electronic Engineering (271 citations). J. D. Blevins has collaborated with scholars based in United States, United Kingdom and Slovakia. Frequent co-authors include Greg Foundos, K. T. Stevens, G. D. Via, Adam C. Lindsey, G.T. Heydt, Craig D. McGray, José Díaz, Ray Kallaher, Raja Ayyanar and R.S. Thallam. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Semiconductor Manufacturing, Journal of Applied Physics and Simulation Modelling Practice and Theory.

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