S.C. Binari

4.5k total citations · 2 hit papers
102 papers, 3.7k citations indexed

About

S.C. Binari is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.C. Binari has authored 102 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 64 papers in Condensed Matter Physics and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.C. Binari's work include GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (48 papers) and Silicon Carbide Semiconductor Technologies (31 papers). S.C. Binari is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (48 papers) and Silicon Carbide Semiconductor Technologies (31 papers). S.C. Binari collaborates with scholars based in United States, China and Spain. S.C. Binari's co-authors include P. B. Klein, A. E. Wickenden, W. Kruppa, G. Kelner, H.B. Dietrich, D. D. Koleske, T.E. Kazior, D. S. Katzer, J.A. Roussos and K. Ikossi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

S.C. Binari

101 papers receiving 3.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

2001 533 citations S.C. Binari, K. Ikossi et al. IEEE Transactions on Electron Devices profile →
Trapping effects in GaN and SiC microwave FETs

2002 359 citations S.C. Binari, P. B. Klein et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.C. Binari United States	29	2.9k	2.7k	1.2k	954	774	102	3.7k
M.A. Khan United States	28	2.6k 0.9×	2.3k 0.9×	1.2k 1.0×	875 0.9×	772 1.0×	91	3.5k
L.B. Rowland United States	32	1.8k 0.6×	2.3k 0.9×	935 0.8×	865 0.9×	906 1.2×	80	3.4k
S. Yu. Karpov Russia	32	2.7k 0.9×	1.8k 0.7×	1.0k 0.8×	1.5k 1.6×	1.3k 1.7×	184	3.8k
S.T. Sheppard United States	17	2.4k 0.8×	2.3k 0.8×	764 0.6×	744 0.8×	503 0.6×	54	2.9k
J. P. Bergman Sweden	35	1.6k 0.5×	2.8k 1.0×	1.1k 0.9×	1.8k 1.8×	1.1k 1.5×	210	4.1k
J. A. Edmond United States	26	982 0.3×	1.8k 0.7×	670 0.6×	786 0.8×	876 1.1×	60	2.6k
G. Verzellesi Italy	24	2.6k 0.9×	2.8k 1.0×	833 0.7×	964 1.0×	639 0.8×	171	3.6k
T.E. Kazior United States	17	1.9k 0.6×	2.0k 0.7×	657 0.5×	808 0.8×	475 0.6×	72	2.6k
Masaaki Kuzuhara Japan	27	2.0k 0.7×	2.3k 0.8×	913 0.7×	849 0.9×	466 0.6×	191	2.8k
Geok Ing Ng Singapore	32	2.2k 0.7×	3.1k 1.1×	1.0k 0.8×	1.3k 1.4×	640 0.8×	269	3.8k

Countries citing papers authored by S.C. Binari

Since Specialization

Citations

This map shows the geographic impact of S.C. Binari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Binari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Binari more than expected).

Fields of papers citing papers by S.C. Binari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Binari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Binari. The network helps show where S.C. Binari may publish in the future.

Co-authorship network of co-authors of S.C. Binari

This figure shows the co-authorship network connecting the top 25 collaborators of S.C. Binari. A scholar is included among the top collaborators of S.C. Binari based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.C. Binari. S.C. Binari is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Deen, David A., David F. Storm, Robert B. Bass, et al.. (2011). Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors. Applied Physics Letters. 98(2). 43 indexed citations

Storm, David F., D. S. Katzer, J.A. Roussos, et al.. (2007). AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization. Journal of Crystal Growth. 301-302. 429–433. 30 indexed citations

Storm, David F., D. S. Katzer, S.C. Binari, et al.. (2005). Correlation of electronic and structural properties of MBE‐grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2212–2215. 2 indexed citations

Binari, S.C., P. B. Klein, & T.E. Kazior. (2003). Trapping effects in wide-bandgap microwave FETs. 3. 1823–1826. 18 indexed citations

Katzer, D. S., David F. Storm, S.C. Binari, et al.. (2003). Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs. 233–234. 2 indexed citations

Klein, P. B. & S.C. Binari. (2003). Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors. Journal of Physics Condensed Matter. 15(44). R1641–R1667. 30 indexed citations

Jessen, Gregg H., Robert Fitch, J. Gillespie, et al.. (2003). High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC. IEEE Electron Device Letters. 24(11). 677–679. 15 indexed citations

Binari, S.C.. (2003). GaN electronic devices for future systems. 3. 1081–1084. 5 indexed citations

Katzer, D. S., David F. Storm, S.C. Binari, et al.. (2003). Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs. Journal of Crystal Growth. 251(1-4). 481–486. 29 indexed citations

10.

Storm, David F., D. S. Katzer, S.C. Binari, et al.. (2002). Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping. Applied Physics Letters. 81(20). 3819–3821. 26 indexed citations

11.

Klein, P. B., S.C. Binari, K. Ikossi, et al.. (2001). Effect of deep traps on sheet charge inAlGaN/GaN high electron mobility transistors. Electronics Letters. 37(25). 1550–1551. 14 indexed citations

12.

Klein, P. B., S.C. Binari, K. Ikossi‐Anastasiou, et al.. (2001). Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors. Electronics Letters. 37(10). 661–662. 74 indexed citations

13.

Ruden, P. P., John D. Albrecht, S.C. Binari, et al.. (1999). Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 678–683. 13 indexed citations

14.

Marchywka, Mike, S.C. Binari, & D. Moses. (1994). Observation of charge storage in diamond MIS capacitors. Electronics Letters. 30(4). 365–366. 1 indexed citations

15.

Kelner, G., et al.. (1989). High-transconductance beta -SiC buried-gate JFETs. IEEE Transactions on Electron Devices. 36(6). 1045–1049. 26 indexed citations

16.

Binari, S.C., et al.. (1988). Millimeter-wave InP lateral transferred-electron oscillators. IEEE Transactions on Microwave Theory and Techniques. 36(12). 1695–1700. 5 indexed citations

17.

Kelner, G., S.C. Binari, & P. Klein. (1987). Plasma Etching of β ‐ SiC. Journal of The Electrochemical Society. 134(1). 253–254. 21 indexed citations

18.

Kelner, G., et al.. (1987). β-SiC MESFET's and buried-gate JFET's. IEEE Electron Device Letters. 8(9). 428–430. 19 indexed citations

19.

Binari, S.C., et al.. (1984). mm-wave passive components for monolithic circuits. Microwave journal. 27. 103. 1 indexed citations

20.

Binari, S.C., et al.. (1984). Millimeter-wave monolithic passive circuit components. 45(4). 579–586. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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