S.C. Binari

4.5k citations

102 papers · 3.7k indexed · 2 hit papers · h-index 29

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 64
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 13
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 48
- Silicon Carbide Semiconductor Technologies 31
- Radio Frequency Integrated Circuit Design 21
- Advancements in Semiconductor Devices and Circuit Design 19
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 23
Materials Chemistry top 5%
Mechanics of Materials
- Metal and Thin Film Mechanics 10

Co-authors: P. B. Klein A. E. Wickenden W. Kruppa G. Kelner H.B. Dietrich D. D. Koleske T.E. Kazior D. S. Katzer
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Electronics Letters (19 papers)Applied Physics Letters (11 papers)IEEE Electron Device Letters (7 papers)
Partner nations: United States China Spain

In The Last Decade

S.C. Binari

101 papers receiving 3.5k citations

Hit Papers

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Peers

Countries citing papers authored by S.C. Binari

Since Specialization

Citations

This map shows the geographic impact of S.C. Binari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Binari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Binari more than expected).

Fields of papers citing papers by S.C. Binari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Binari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Binari. The network helps show where S.C. Binari may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S.C. Binari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.C. Binari Line = papers co-authored together S.C. Binari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters ·David A. Deen,David F. Storm,Robert B. Bass,David J. Meyer,D. S. Katzer,S.C. Binari,Claire Saint-Félix,Theodosia Gougousi	2011	43
2	Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Solid-State Electronics ·David A. Deen,David F. Storm,D. S. Katzer,David J. Meyer,S.C. Binari	2010	34
3	AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric Electronics Letters ·David A. Deen,S.C. Binari,David F. Storm,D. S. Katzer,J.A. Roussos,Justin C. Hackley,Theodosia Gougousi	2009	18
4	AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Journal of Crystal Growth ·David F. Storm,D. S. Katzer,J.A. Roussos,J. Mittereder,Robert B. Bass,S.C. Binari,Drew Hanser,Edward A. Preble,K. R. Evans	2007	30
5	Correlation of electronic and structural properties of MBE‐grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David F. Storm,D. S. Katzer,S.C. Binari,B. V. Shanabrook,Lin Zhou,David J. Smith	2005	2
6	Trapping effects in wide-bandgap microwave FETs S.C. Binari,P. B. Klein,T.E. Kazior	2003	18
7	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen,Robert Fitch,J. Gillespie,G. D. Via,Neil Moser,舘野正夫,Antonio Crespo,J. Sewell,R. Dettmer,T. Jenkins,R. F. Davis,Jinwei Yang,M.A. Khan,S.C. Binari	2003	15
8	Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping Applied Physics Letters ·David F. Storm,D. S. Katzer,S.C. Binari,E. R. Glaser,B. V. Shanabrook,J.A. Roussos	2002	26
9	Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors Electronics Letters ·P. B. Klein,S.C. Binari,K. Ikossi‐Anastasiou,A. E. Wickenden,D. D. Koleske,R. L. Henry,D. S. Katzer	2001	74
10	Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors MRS Internet Journal of Nitride Semiconductor Research ·P. P. Ruden,John D. Albrecht,Alexandre Menegazzo,S.C. Binari,K. Ikossi‐Anastasiou,Mario G. Ancona,R.L. Henry,D. D. Koleske,A. E. Wickenden	1999	13
11	Photoionization Spectra of Traps Responsible for Current Collapse in GaN MESFETs MRS Proceedings ·P. B. Klein,Yaseen A. Almehmadi,S.C. Binari	1999	3
12	α-SiC buried-gate junction field effect transistors Materials Science and Engineering B ·G. Kelner,S.C. Binari,M. S. Shur,Aisha Atiah Alamrani,John W. Palmour,Hong Jin Kong	1992	11
13	Millimeter-wave planar InP Schottky diodes and their small-signal equivalent circuit IEEE Transactions on Microwave Theory and Techniques ·陈晓舒,S.C. Binari	1989	17
14	High-transconductance beta -SiC buried-gate JFETs IEEE Transactions on Electron Devices ·G. Kelner,M. S. Shur,S.C. Binari,Aisha Atiah Alamrani,Hoyoul Kong	1989	26
15	β-SiC MESFET's and buried-gate JFET's IEEE Electron Device Letters ·G. Kelner,S.C. Binari,Aisha Atiah Alamrani,Hong Jin Kong	1987	19
16	Plasma Etching of β ‐ SiC Journal of The Electrochemical Society ·G. Kelner,S.C. Binari,P. Klein	1987	21
17	mm-wave passive components for monolithic circuits Microwave journal ·陈晓舒,S.C. Binari	1984	1
18	Millimeter-wave monolithic passive circuit components S.C. Binari,陈晓舒,G. Kelner,J.B. Boos	1984	2
19	Electric field distributions in planar transferred-electron devices measured with picosecond optical pulses IEEE Electron Device Letters ·Thomas F. Carruthers,J. F. Weller,S.C. Binari,Philip E. Thompson	1982	4
20	Ge photocapacitive MIS infrared detectors Journal of Applied Physics ·S.C. Binari,William E. Miller,A. Sher,Ms. R. Roopa	1979	2

About S.C. Binari

S.C. Binari is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 102 papers that have together received 3.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (48 papers), Silicon Carbide Semiconductor Technologies (31 papers), Semiconductor Quantum Structures and Devices (23 papers), Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Ga2O3 and related materials (13 papers) and Metal and Thin Film Mechanics (10 papers). The work is most often cited by research in Condensed Matter Physics (2.9k citations), Electronic, Optical and Magnetic Materials (1.2k citations) and Electrical and Electronic Engineering (2.7k citations). S.C. Binari has collaborated with scholars based in United States, China and Spain. Frequent co-authors include P. B. Klein, A. E. Wickenden, W. Kruppa, G. Kelner, H.B. Dietrich, D. D. Koleske, T.E. Kazior, D. S. Katzer, J.A. Roussos and K. Ikossi. Their work appears in journals such as Electronics Letters, Applied Physics Letters, IEEE Electron Device Letters, Solid-State Electronics and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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