S. Bradley

660 citations

24 papers · 528 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Nuclear and High Energy Physics top 10%
- Nuclear physics research studies
- Astronomical and nuclear sciences

Papers in

Condensed Matter Physics 14
- GaN-based semiconductor devices and materials 14
Electronic, Optical and Magnetic Materials 8
- Ga2O3 and related materials 8

Co-authors: L. J. Brillson W. J. Schaff S. H. Goss A. C. Mignerey R. J. McDonald G.J. Wozniak M. A. McMahan L.G. Moretto
Journals: Applied Physics Letters (5 papers)Applied Surface Science (3 papers)Physics Letters B (2 papers)Nuclear Physics A (2 papers)Journal of Applied Physics (2 papers)
Partner nations: United States Italy Japan

In The Last Decade

S. Bradley

24 papers receiving 515 citations

Peers

Countries citing papers authored by S. Bradley

Since Specialization

Citations

This map shows the geographic impact of S. Bradley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bradley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bradley more than expected).

Fields of papers citing papers by S. Bradley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bradley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bradley. The network helps show where S. Bradley may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Bradley, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bradley Line = papers co-authored together S. Bradley links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics ·Min Gao, S. Bradley, Yu Cao, B. Zhang, Yakang Lin, Steven A. Ringel, Jonathan Angus, W. J. Schaff, L. J. Brillson	2006	50
2	Evidence of interface-induced persistent photoconductivity in InP∕In0.53Ga0.47As∕InP double heterostructures grown by molecular-beam epitaxy Applied Physics Letters ·Mantu K. Hudait, Yu-Fu Lin, S. H. Goss, P. E. Smith, S. Bradley, L. J. Brillson, Steve Johnston, R. K. Ahrenkiel, Steven A. Ringel	2005	1
3	Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures Journal of Applied Physics ·S. Bradley, S. H. Goss, Jonathan Angus, W. J. Schaff, L. J. Brillson	2005	15
4	Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science ·L. J. Brillson, S. Bradley, K. A. Gschneidener, S. H. Goss, Xiaoling Sun, Robert S. Okojie, J. S. Hwang, W. J. Schaff	2005	2
5	Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers Applied Physics Letters ·Min Gao, Yu-Fu Lin, S. Bradley, Steven A. Ringel, Jonathan Angus, W. J. Schaff, L. J. Brillson	2005	19
6	Phase change materials as a viable thermal interface material for high-power electronic applications C. Ramaswamy, Subhash L. Shindé, Frank Pompeo, Drew Christopher Gende, S. Bradley	2004	13
7	Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·P. E. Smith, S. H. Goss, S. Bradley, Mantu K. Hudait, Yu-Fu Lin, Steven A. Ringel, L. J. Brillson	2004	10
8	Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Xiaoling Sun, S. Bradley, Gregg H. Jessen, D. C. Look, R. J. Molnar, L. J. Brillson	2004	3
9	Surface cleaning and annealing effects on Ni∕AlGaN interface atomic composition and Schottky barrier height Applied Physics Letters ·S. Bradley, S. H. Goss, Jonathan Angus, W. J. Schaff, L. J. Brillson	2004	30
10	Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, B. D. White, S. Bradley, Dennis E. Walker, L. J. Brillson	2003	10
11	Deep level defects and doping in high Al mole fraction AlGaN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Bradley, S. H. Goss, L. J. Brillson, Jonathan Angus, W. J. Schaff	2003	43
12	Low-energy electron-excited nanoluminescence studies of GaN and related materials Applied Surface Science ·L. J. Brillson, S. Bradley, S. H. Goss, Xiaoling Sun, Michael J. Murphy, W. J. Schaff, L.F. Eastman, D. C. Look, R. J. Molnar, F. A. Ponce, Dennis J. Selkoe, Yuji Sakai	2002	4
13	Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters ·Jeonghyun Hwang, W. J. Schaff, L.F. Eastman, S. Bradley, L. J. Brillson, D. C. Look, Junqiao Wu, Władek Walukiewicz, Madalina Furis, Alexander N. Cartwright	2002	29
14	Near-surface electronic defects and morphology of CuIn1−xGaxSe2 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Yuri M. Strzhemechny, P. E. Smith, S. Bradley, Dongxiang Liao, Angus Rockett, K. Ramanathan, L. J. Brillson	2002	17
15	Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures Journal of Electronic Materials ·S. Bradley, A. P. Young, L. J. Brillson, Michael J. Murphy, W. J. Schaff	2001	14
16	Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science ·L. J. Brillson, A. P. Young, Gregg H. Jessen, T. M. Levin, S. Bradley, S. H. Goss, Junjik Bae, F. A. Ponce, Michael J. Murphy, W. J. Schaff, L.F. Eastman	2001	6
17	Distribution of excitation energy in the 505 MeVFe56+165Ho reaction Physical Review C ·D. Benton, H. Breuer, F. Khazaie, K. Kwiatkowski, V. E. Viola, S. Bradley, A. C. Mignerey, Jean-Claude Tietscheu-Tchokouali	1988	27
18	Complex fragment emission at 50 MeV/u: Compound nuclei forever? Physics Letters B ·D. R. Bowman, W.L. Kehoe, R. J. Charity, M. A. McMahan, A. Moroni, A. Bracco, S. Bradley, I. Iori, R. J. McDonald, A. C. Mignerey, L.G. Moretto, M.N. Namboodiri, G.J. Wozniak	1987	47
19	Excitation energy division in the 9 MeV/nucleon 56Fe+165Ho reaction Physics Letters B ·D. Benton, H. Breuer, F. Khazaie, K. Kwiatkowski, V. E. Viola, S. Bradley, A. C. Mignerey, Jean-Claude Tietscheu-Tchokouali, R. J. McDonald	1987	25
20	Characterization of Hot Compound Nuclei from Binary Decay into Complex Fragments Physical Review Letters ·R. J. Charity, M. A. McMahan, D. R. Bowman, Masteroppgave I Globale Studier, R. J. McDonald, G.J. Wozniak, L.G. Moretto, S. Bradley, W.L. Kehoe, A. C. Mignerey, M.N. Namboodiri	1986	40

About S. Bradley

S. Bradley is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Nuclear and High Energy Physics, Radiation and Electrical and Electronic Engineering, having authored 24 papers that have together received 528 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (11 papers), Ga2O3 and related materials (8 papers), Nuclear physics research studies (5 papers), ZnO doping and properties (4 papers), Astronomical and nuclear sciences (4 papers), Semiconductor materials and interfaces (3 papers) and Nuclear Physics and Applications (3 papers). The work is most often cited by research in Condensed Matter Physics (223 citations), Nuclear and High Energy Physics (209 citations), Radiation (72 citations), Electronic, Optical and Magnetic Materials (137 citations) and Atomic and Molecular Physics, and Optics (154 citations). S. Bradley has collaborated with scholars based in United States, Italy and Japan. Frequent co-authors include L. J. Brillson, W. J. Schaff, S. H. Goss, A. C. Mignerey, R. J. McDonald, G.J. Wozniak, M. A. McMahan, L.G. Moretto, D. R. Bowman and R. J. Charity. Their work appears in journals such as Applied Physics Letters, Applied Surface Science, Physics Letters B, Nuclear Physics A and Journal of Applied Physics.

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