R. Dettmer

720 total citations
41 papers, 567 citations indexed

About

R. Dettmer is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Dettmer has authored 41 papers receiving a total of 567 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Dettmer's work include Radio Frequency Integrated Circuit Design (13 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). R. Dettmer is often cited by papers focused on Radio Frequency Integrated Circuit Design (13 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). R. Dettmer collaborates with scholars based in United States. R. Dettmer's co-authors include T. Jenkins, J. Gillespie, J. Sewell, Robert Fitch, B.K. Choï, R. Wilkins, Ronald D. Schrimpf, G. D. Via, Daniel M. Fleetwood and F. Ren and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

R. Dettmer

35 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Dettmer United States 11 445 320 179 142 101 41 567
Marek Ekielski Poland 11 278 0.6× 131 0.4× 124 0.7× 135 1.0× 67 0.7× 43 389
Yean-Kuen Fang Taiwan 13 474 1.1× 73 0.2× 114 0.6× 223 1.6× 85 0.8× 79 569
Andrew J. Trunek United States 13 488 1.1× 136 0.4× 143 0.8× 122 0.9× 53 0.5× 53 596
Hirohito Watanabe Japan 14 393 0.9× 102 0.3× 129 0.7× 255 1.8× 129 1.3× 44 584
D. Vasilache Romania 16 523 1.2× 103 0.3× 90 0.5× 224 1.6× 298 3.0× 95 750
Tobias Erlbacher Germany 18 954 2.1× 215 0.7× 149 0.8× 157 1.1× 67 0.7× 132 1.1k
V.R. Balakrishnan India 13 330 0.7× 88 0.3× 40 0.2× 103 0.7× 159 1.6× 33 451
Mark A. Gubbins United Kingdom 11 318 0.7× 88 0.3× 184 1.0× 133 0.9× 135 1.3× 35 592
Hassan Maher France 13 498 1.1× 397 1.2× 152 0.8× 136 1.0× 43 0.4× 71 632
M. Alomari Germany 14 547 1.2× 627 2.0× 243 1.4× 333 2.3× 83 0.8× 44 867

Countries citing papers authored by R. Dettmer

Since Specialization
Citations

This map shows the geographic impact of R. Dettmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Dettmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Dettmer more than expected).

Fields of papers citing papers by R. Dettmer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Dettmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Dettmer. The network helps show where R. Dettmer may publish in the future.

Co-authorship network of co-authors of R. Dettmer

This figure shows the co-authorship network connecting the top 25 collaborators of R. Dettmer. A scholar is included among the top collaborators of R. Dettmer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Dettmer. R. Dettmer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sun, Yugang, Etienne Menard, John A. Rogers, et al.. (2006). Gigahertz operation in flexible transistors on plastic substrates. Applied Physics Letters. 88(18). 51 indexed citations
2.
Wang, Hung-Ta, B. S. Kang, F. Ren, et al.. (2005). Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 87(17). 43 indexed citations
3.
Fitch, Robert, J. Gillespie, Neil Moser, et al.. (2004). Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 619–623. 13 indexed citations
4.
Dettmer, R.. (2003). Dielectric antennas make waves. IEE Review. 49(2). 28–31. 4 indexed citations
5.
Jessen, Gregg H., Robert Fitch, J. Gillespie, et al.. (2003). High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC. IEEE Electron Device Letters. 24(11). 677–679. 15 indexed citations
6.
Luo, B., Jihyun Kim, F. Ren, et al.. (2003). Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 82(9). 1428–1430. 33 indexed citations
7.
Luo, B., F. Ren, K. K. Allums, et al.. (2003). Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 47(6). 1015–1020. 28 indexed citations
8.
9.
Bozada, C., Douglas W. Barlage, R. Dettmer, et al.. (2002). Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub. 155–158. 2 indexed citations
10.
Gillespie, J., Robert Fitch, J. Sewell, et al.. (2002). Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 23(9). 505–507. 40 indexed citations
11.
Liou, L.L., Douglas W. Barlage, C. Bozada, et al.. (2002). Thermal analysis and characterization of thermally shunted AlGaAs/GaAs heterojunction bipolar transistors. 563–572. 4 indexed citations
12.
Fitch, Robert, R. Dettmer, J. Gillespie, et al.. (2002). Thermal studies on heterostructure bipolar transistors using electroluminescence. 45–50. 4 indexed citations
13.
Quach, T., C. Bozada, G. DeSalvo, et al.. (2002). A highly manufacturable 0.2 μm AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process. 139. 89–92. 1 indexed citations
14.
Jenkins, T., C. Bozada, G. DeSalvo, et al.. (2002). Power performance of thermally-shunted heterojunction bipolar transistors. 2. 949–952. 1 indexed citations
15.
Anholt, R., C. Bozada, G. DeSalvo, et al.. (2002). Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors. 167–170.
16.
Bozada, C., G. DeSalvo, R. Dettmer, et al.. (1997). “Safe” solvent resist process for sub-quarter micron T-gates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2916–2920. 2 indexed citations
17.
Anholt, R., C. Bozada, G. DeSalvo, et al.. (1997). Base and collector resistances in heterojunction bipolar transistors. Solid-State Electronics. 41(11). 1739–1743. 2 indexed citations
18.
Dettmer, R.. (1997). New light on silicon. IEE Review. 43(2). 71–73. 1 indexed citations
19.
Anholt, R., C. Bozada, R. Dettmer, et al.. (1996). Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors. Solid-State Electronics. 39(7). 961–963. 4 indexed citations
20.
Sewell, J., et al.. (1992). Single-cycle lithography process for both large and sub-half-micron features (Poster Paper). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1671. 177–177. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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