T. Billon

2.4k total citations
93 papers, 1.7k citations indexed

About

T. Billon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Billon has authored 93 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in T. Billon's work include Semiconductor materials and devices (52 papers), Silicon Carbide Semiconductor Technologies (36 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). T. Billon is often cited by papers focused on Semiconductor materials and devices (52 papers), Silicon Carbide Semiconductor Technologies (36 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). T. Billon collaborates with scholars based in France, Switzerland and Czechia. T. Billon's co-authors include Jean‐Michel Hartmann, G. Rolland, Y. Bogumilowicz, P. Holliger, Anne‐Marie Papon, Alexandra Abbadie, J.F. Damlencourt, Laurent Vivien, Jean-Marc Fédéli and V. Destefanis and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Billon

90 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Billon France 21 1.5k 568 356 352 78 93 1.7k
Koji Usuda Japan 21 1.6k 1.0× 415 0.7× 487 1.4× 450 1.3× 66 0.8× 107 1.7k
O. Kienzle Germany 18 630 0.4× 635 1.1× 657 1.8× 157 0.4× 81 1.0× 38 1.1k
Anna Marzegalli Italy 16 590 0.4× 401 0.7× 345 1.0× 326 0.9× 43 0.6× 59 835
Radek Roucka United States 21 1.4k 0.9× 734 1.3× 422 1.2× 434 1.2× 43 0.6× 55 1.6k
Norio Hirashita Japan 16 814 0.5× 198 0.3× 235 0.7× 200 0.6× 76 1.0× 56 945
St. Lenk Germany 18 872 0.6× 397 0.7× 318 0.9× 177 0.5× 66 0.8× 56 976
N. Hirashita Japan 17 866 0.6× 219 0.4× 362 1.0× 151 0.4× 80 1.0× 60 991
Byoung‐Ho Cheong South Korea 14 620 0.4× 310 0.5× 488 1.4× 156 0.4× 146 1.9× 41 919
R. R. Razouk United States 13 1.2k 0.8× 420 0.7× 559 1.6× 141 0.4× 71 0.9× 25 1.3k
B. Dietrich Germany 14 640 0.4× 377 0.7× 332 0.9× 230 0.7× 24 0.3× 43 809

Countries citing papers authored by T. Billon

Since Specialization
Citations

This map shows the geographic impact of T. Billon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Billon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Billon more than expected).

Fields of papers citing papers by T. Billon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Billon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Billon. The network helps show where T. Billon may publish in the future.

Co-authorship network of co-authors of T. Billon

This figure shows the co-authorship network connecting the top 25 collaborators of T. Billon. A scholar is included among the top collaborators of T. Billon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Billon. T. Billon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Augendre, E., L. Sanchez, Jean‐Michel Hartmann, et al.. (2009). Fabrication of compressively-strained GeOI substrates using the Smart Cut<sup>TM</sup> technology. 1–2. 3 indexed citations
3.
Hartmann, Jean‐Michel, et al.. (2008). Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe. Journal of Crystal Growth. 310(10). 2493–2502. 8 indexed citations
4.
Hartmann, Jean‐Michel, et al.. (2007). Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering. Journal of Crystal Growth. 310(1). 62–70. 20 indexed citations
5.
Hartmann, Jean‐Michel, et al.. (2006). Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth. 294(2). 288–295. 43 indexed citations
6.
Kermarrec, O., et al.. (2005). Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition. Journal of Crystal Growth. 286(1). 11–17. 3 indexed citations
7.
Fillot, F., S. Minoret, I. Maťko, et al.. (2005). Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3. Microelectronic Engineering. 82(3-4). 248–253. 100 indexed citations
8.
Richard, C., et al.. (2005). Barrier and Copper Seedlayer Wet Etching. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 361–364. 5 indexed citations
9.
Hartmann, Jean‐Michel, P. Holliger, F. Laugier, et al.. (2005). Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors. Journal of Crystal Growth. 283(1-2). 57–67. 20 indexed citations
10.
Hartmann, Jean‐Michel, Anne‐Marie Papon, P. Holliger, et al.. (2004). Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes. MRS Proceedings. 809. 8 indexed citations
11.
Pons, M., L. Di Cioccio, E. Blanquet, et al.. (2004). Contribution of numerical simulation to silicon carbide bulk growth and epitaxy. Journal of Physics Condensed Matter. 16(17). S1579–S1595. 5 indexed citations
12.
Damlencourt, J.-F., O. Weber, O. Renault, et al.. (2004). Study of HfO2 films deposited on strained Si1−xGex layers by atomic layer deposition. Journal of Applied Physics. 96(10). 5478–5483. 19 indexed citations
13.
Renault, O., et al.. (2003). Study of the Wet Re-Oxidation Annealing of SiO<sub>2</sub>/4H-SiC (0001) Interface Properties by AR-XPS Measurements. Materials science forum. 433-436. 555–558. 11 indexed citations
14.
Pons, M., E. Blanquet, P. Ferret, et al.. (2002). Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition. Materials science forum. 389-393. 223–226. 4 indexed citations
15.
Pernot, Etienne, et al.. (2002). Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography. Materials science forum. 389-393. 419–422. 3 indexed citations
16.
Pons, M., A. Pisch, Philippe Grosse, et al.. (2001). SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results. Materials science forum. 353-356. 7–10. 12 indexed citations
17.
Bluet, Jean‐Marie, Julien Pernot, T. Billon, et al.. (2000). Al and Al/C High Dose Implantation in 4H-SiC. Materials science forum. 338-342. 885–888. 3 indexed citations
18.
Ouisse, T., et al.. (1999). Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes. Materials Science and Engineering B. 61-62. 402–405. 2 indexed citations
19.
Raynaud, Christophe, F. Ducroquet, G. Guillot, et al.. (1995). Determination of donor and acceptor level energies by admittance spectroscopy in 6H SiC. Materials Science and Engineering B. 29(1-3). 122–125. 13 indexed citations
20.
Raynaud, Christophe, et al.. (1994). Instabilités dans les structures MOS 6H-SiC. Journal de Physique III. 4(5). 937–952. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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