F. Fillot

1.1k total citations
38 papers, 738 citations indexed

About

F. Fillot is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, F. Fillot has authored 38 papers receiving a total of 738 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in F. Fillot's work include Phase-change materials and chalcogenides (20 papers), Semiconductor materials and devices (16 papers) and Chalcogenide Semiconductor Thin Films (14 papers). F. Fillot is often cited by papers focused on Phase-change materials and chalcogenides (20 papers), Semiconductor materials and devices (16 papers) and Chalcogenide Semiconductor Thin Films (14 papers). F. Fillot collaborates with scholars based in France, Belgium and Czechia. F. Fillot's co-authors include Pierre Noé, F. Hippert, Jean‐Yves Raty, C. Vallée, S. Maı̂trejean, T. Billon, C. Sabbione, I. Maťko, B. Chenevier and Nicolas Bernier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Fillot

37 papers receiving 722 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Fillot France 13 613 510 129 117 93 38 738
S. Jakschik Germany 14 772 1.3× 353 0.7× 108 0.8× 64 0.5× 51 0.5× 39 866
Emmanuel Nolot France 15 443 0.7× 413 0.8× 68 0.5× 87 0.7× 61 0.7× 69 697
U. Zastrow Germany 15 855 1.4× 819 1.6× 167 1.3× 60 0.5× 77 0.8× 52 1.0k
Kun Ho Kim South Korea 9 701 1.1× 817 1.6× 272 2.1× 103 0.9× 69 0.7× 19 934
Hyung-Ik Lee South Korea 11 630 1.0× 543 1.1× 127 1.0× 70 0.6× 90 1.0× 34 788
H.C. Kim United States 8 282 0.5× 242 0.5× 132 1.0× 80 0.7× 43 0.5× 10 448
Ken‐ichi Onisawa Japan 14 489 0.8× 477 0.9× 50 0.4× 67 0.6× 49 0.5× 32 606
Ralf Detemple Germany 10 426 0.7× 583 1.1× 127 1.0× 150 1.3× 87 0.9× 15 645
M. Kaiser Netherlands 14 752 1.2× 690 1.4× 110 0.9× 356 3.0× 60 0.6× 49 1.2k
E. Carria Italy 16 445 0.7× 487 1.0× 156 1.2× 227 1.9× 64 0.7× 32 704

Countries citing papers authored by F. Fillot

Since Specialization
Citations

This map shows the geographic impact of F. Fillot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Fillot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Fillot more than expected).

Fields of papers citing papers by F. Fillot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Fillot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Fillot. The network helps show where F. Fillot may publish in the future.

Co-authorship network of co-authors of F. Fillot

This figure shows the co-authorship network connecting the top 25 collaborators of F. Fillot. A scholar is included among the top collaborators of F. Fillot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Fillot. F. Fillot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nolot, Emmanuel, et al.. (2024). The effects of Sb/Te ratio on crystallization kinetics in Ge-rich GeSbTe phase-change materials. Journal of Applied Physics. 136(15). 4 indexed citations
2.
Nolot, Emmanuel, F. Aussenac, Nicolas Bernier, et al.. (2024). Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature. physica status solidi (RRL) - Rapid Research Letters. 1 indexed citations
3.
Bernard, M., F. Fillot, F. Aussenac, et al.. (2023). Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress. Journal of Applied Physics. 133(7). 4 indexed citations
4.
Navarro, G., C. Sabbione, M. Frei, et al.. (2022). Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. SPIRE - Sciences Po Institutional REpository. 1–4. 3 indexed citations
5.
Nolot, Emmanuel, E. Martínez, F. Fillot, et al.. (2020). Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping. Journal of Applied Physics. 128(21). 21 indexed citations
6.
Fillot, F., et al.. (2018). Crystallization of Ge2Sb2Te5 and nitrogren-doped Ge2Sb2Te5 phase-change-materials thin films studied by in situ combined X-ray scattering techniques. Journal of Applied Crystallography. 51(6). 1691–1705. 16 indexed citations
7.
Kusiak, Andrzej, Jean‐Luc Battaglia, Pierre Noé, Véronique Sousa, & F. Fillot. (2016). Thermal conductivity of carbon doped GeTe thin films in amorphous and crystalline state measured by modulated photo thermal radiometry. Journal of Physics Conference Series. 745. 32104–32104. 19 indexed citations
8.
Navarro, G., V. Sousa, Pierre Noé, et al.. (2016). N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory. 1–4. 16 indexed citations
9.
Noé, Pierre, C. Sabbione, Nicolas Bernier, et al.. (2016). Impact of interfaces on scenario of crystallization of phase change materials. Acta Materialia. 110. 142–148. 60 indexed citations
10.
Fournel, Frank, et al.. (2015). Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films. Microsystem Technologies. 21(5). 953–959. 7 indexed citations
11.
Fillot, F., A. Roule, M. Veillerot, et al.. (2010). GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion. Microelectronic Engineering. 88(5). 817–821. 16 indexed citations
12.
Martínez, E., C. Leroux, Christophe Licitra, et al.. (2009). Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget. Journal of The Electrochemical Society. 156(8). G120–G120. 11 indexed citations
13.
Hušeková, K., Edmund Dobročka, A. Rosová, et al.. (2009). Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films. 518(16). 4701–4704. 15 indexed citations
14.
Hartmann, Jean‐Michel, et al.. (2008). Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe. Journal of Crystal Growth. 310(10). 2493–2502. 8 indexed citations
15.
Fillot, F., S. Maı̂trejean, I. Maťko, & B. Chenevier. (2008). Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors. Applied Physics Letters. 92(2). 9 indexed citations
16.
Martínez, E., C. Leroux, Christophe Licitra, et al.. (2008). Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget. ECS Transactions. 16(5). 161–169. 4 indexed citations
17.
Hartmann, Jean‐Michel, et al.. (2007). Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering. Journal of Crystal Growth. 310(1). 62–70. 20 indexed citations
18.
Hartmann, Jean‐Michel, et al.. (2007). Growth Kinetics and Boron-Doping of Very High Ge Content Si1-xGex for Sources and Drains Engineering. ECS Transactions. 6(1). 397–400.
19.
Fillot, F., S. Minoret, I. Maťko, et al.. (2005). Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3. Microelectronic Engineering. 82(3-4). 248–253. 100 indexed citations
20.
Reimbold, G., O. Sicardy, L. Arnaud, F. Fillot, & J. Torrès. (2003). Mechanical stress measurements in damascene copper interconnects and influence on electromigration parameters. 745–748. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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