T. Baron

6.5k citations
255 papers · 5.0k indexed · h-index 40

T. Baron

245 papers receiving 4.8k citations

Peers

T. Baron
Comparison fields: 5 of 90
  • Electrical and Electronic Engineering 3.7k
  • Atomic and Molecular Physics, and Optics 1.9k
  • Materials Chemistry 2.1k
  • Biomedical Engineering 1.9k
  • Structural Biology 40
Replace Peter Bøggild with:
Peter Bøggild Denmark
Haiyan Ou Denmark
Thorsten Trupke Australia
Wei Fang China
Hongtao Lin China
Armin W. Knoll Switzerland
Yoshinori Tanaka Japan
Weiguo Chu China
Xu Du United States
Noritaka Usami Japan
T. Baron relative to Peter Bøggild Denmark Peter Bøggild's profile →
Citations per field
00.5×1.5×
Peter Bøggild · 1×
Citations per year

Countries citing papers authored by T. Baron

Since Specialization
Citations

This map shows the geographic impact of T. Baron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Baron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Baron more than expected).

Fields of papers citing papers by T. Baron

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Baron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Baron. The network helps show where T. Baron may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Baron, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Baron Line = papers co-authored together T. Baron links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 20244
2 20244
3
Large Diameter Epi-Ready InP on Si (InPOSi) Substrates
20231
4 20228
5 20226
6 20221
7 20216
8 202111
9 202112
10 20218
11 20205
12 20206
13 20205
14 20208
15 201953
16 20186
17 20181
18 20188
19 20177
20 201639

About T. Baron

T. Baron is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 255 papers that have together received 5.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (106 papers), Nanowire Synthesis and Applications (90 papers), Advancements in Semiconductor Devices and Circuit Design (51 papers), Semiconductor Quantum Structures and Devices (47 papers), Silicon Nanostructures and Photoluminescence (46 papers), Photonic and Optical Devices (31 papers), Semiconductor materials and interfaces (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.7k citations), Atomic and Molecular Physics, and Optics (1.9k citations) and Materials Chemistry (2.1k citations). T. Baron has collaborated with scholars based in France, United Kingdom and United States. Frequent co-authors include P. Gentile, P. Ferret, F. Dhalluin, M. Martin, Michael J. Gordon, B. Salem, P. Mur, F. Mazen, N. Magnéa and B. De Salvo. Their work appears in journals such as Applied Physics Letters, Nanotechnology, Journal of Crystal Growth, Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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