T. Baron

6.5k total citations
255 papers, 5.0k citations indexed

About

T. Baron is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, T. Baron has authored 255 papers receiving a total of 5.0k indexed citations (citations by other indexed papers that have themselves been cited), including 204 papers in Electrical and Electronic Engineering, 116 papers in Biomedical Engineering and 100 papers in Materials Chemistry. Recurrent topics in T. Baron's work include Semiconductor materials and devices (106 papers), Nanowire Synthesis and Applications (90 papers) and Advancements in Semiconductor Devices and Circuit Design (51 papers). T. Baron is often cited by papers focused on Semiconductor materials and devices (106 papers), Nanowire Synthesis and Applications (90 papers) and Advancements in Semiconductor Devices and Circuit Design (51 papers). T. Baron collaborates with scholars based in France, United Kingdom and United States. T. Baron's co-authors include P. Gentile, P. Ferret, F. Dhalluin, M. Martin, Michael J. Gordon, B. Salem, P. Mur, F. Mazen, N. Magnéa and B. De Salvo and has published in prestigious journals such as Nature Communications, Nano Letters and ACS Nano.

In The Last Decade

T. Baron

245 papers receiving 4.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Baron France	40	3.7k	2.1k	1.9k	1.9k	404	255	5.0k
Peter Bøggild Denmark	43	2.6k 0.7×	3.5k 1.6×	2.2k 1.1×	2.0k 1.0×	402 1.0×	212	5.9k
Wei Fang China	38	4.3k 1.2×	2.3k 1.1×	1.4k 0.7×	2.8k 1.5×	849 2.1×	159	6.2k
Yoshinori Tanaka Japan	35	3.1k 0.8×	915 0.4×	928 0.5×	2.7k 1.4×	344 0.9×	139	4.4k
Thorsten Trupke Australia	37	7.1k 1.9×	4.0k 1.9×	1.7k 0.9×	1.8k 0.9×	689 1.7×	183	8.9k
Haiyan Ou Denmark	34	3.4k 0.9×	895 0.4×	576 0.3×	2.0k 1.1×	268 0.7×	208	4.3k
Zongyin Yang China	25	2.0k 0.6×	1.1k 0.5×	1.5k 0.8×	918 0.5×	464 1.1×	70	3.2k
Jae‐Hyeon Ko South Korea	30	1.7k 0.5×	3.3k 1.5×	1.4k 0.7×	968 0.5×	936 2.3×	258	4.1k
Yaoguang Ma China	26	1.9k 0.5×	1.1k 0.5×	1.1k 0.6×	1.4k 0.7×	684 1.7×	91	4.8k
Xu‐Lin Zhang China	35	2.1k 0.6×	959 0.4×	1.6k 0.8×	935 0.5×	706 1.7×	135	3.7k
Hongtao Lin China	35	2.7k 0.7×	1.3k 0.6×	1.1k 0.6×	1.3k 0.7×	475 1.2×	155	4.0k

Countries citing papers authored by T. Baron

Since Specialization

Citations

This map shows the geographic impact of T. Baron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Baron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Baron more than expected).

Fields of papers citing papers by T. Baron

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Baron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Baron. The network helps show where T. Baron may publish in the future.

Co-authorship network of co-authors of T. Baron

This figure shows the co-authorship network connecting the top 25 collaborators of T. Baron. A scholar is included among the top collaborators of T. Baron based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Baron. T. Baron is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Yan, Zhao, et al.. (2025). Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001). physica status solidi (a). 223(2).

Baron, T., et al.. (2025). Fanning the Flames: The Myth of World Cup Qualification Matches and Hooliganism Triggering the ‘Soccer War’. The International Journal of the History of Sport. 42(12-13). 1602–1621.

Martin, Michael C., et al.. (2024). Exploring Strategies for Performance Enhancement in Micro‐LEDs: a Synoptic Review of III‐V Semiconductor Technology. Advanced Optical Materials. 13(6). 4 indexed citations

Navone, Christelle, L. Sanchez, B. Rousset, et al.. (2023). Large Diameter Epi-Ready InP on Si (InPOSi) Substrates. SPIRE - Sciences Po Institutional REpository. 1 indexed citations

Martin, M., Pascal Pochet, Hanako Okuno, et al.. (2022). 200 mm-scale growth of 2D layered GaSe with preferential orientation. APL Materials. 10(5). 6 indexed citations

Barbot, Nicolas, et al.. (2022). Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach. Nanomaterials. 12(23). 4237–4237. 1 indexed citations

Ma, Jingwen, Mingchu Tang, Haochuan Li, et al.. (2022). Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon. ACS Photonics. 9(12). 3824–3830. 8 indexed citations

Boy, Guy André, et al.. (2021). Digital twin design requirements in downgraded situations management. IFAC-PapersOnLine. 54(1). 869–873. 11 indexed citations

Martin, M., Christophe Jany, Léopold Virot, et al.. (2021). Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers. AIP Advances. 11(8). 8 indexed citations

10.

Gity, Farzan, M. Martin, Hanako Okuno, et al.. (2021). Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection. ACS Applied Nano Materials. 4(8). 7820–7831. 12 indexed citations

11.

Luong, Minh Anh, Éric Robin, N. Pauc, et al.. (2020). Reversible Al Propagation in Si_xGe_1–x Nanowires: Implications for Electrical Contact Formation. ACS Applied Nano Materials. 3(10). 10427–10436. 5 indexed citations

12.

Martin, M., S. David, J. Moeyaert, et al.. (2020). Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers. AIP Advances. 10(12). 6 indexed citations

13.

Néel, Delphine, Nicolas Vaissière, D. Maké, et al.. (2020). Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer. SPIRE - Sciences Po Institutional REpository. 1–4. 3 indexed citations

14.

Sistani, Masiar, B. Salem, T. Baron, et al.. (2020). Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means. Nanotechnology. 32(14). 145711–145711. 8 indexed citations

15.

Ecoffey, Serge, et al.. (2019). A fabrication process for self-connected horizontal SiGe nanowires. Microelectronic Engineering. 220. 111150–111150.

16.

Liu, Zizhuo, M. Martin, T. Baron, et al.. (2019). Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon. Journal of Lightwave Technology. 38(2). 240–248. 53 indexed citations

17.

Souto, J., et al.. (2018). Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions. Journal of Electronic Materials. 47(9). 5072–5076. 1 indexed citations

18.

Baron, T., et al.. (2018). Growth dynamics of SiGe nanowires by the vapour–liquid–solid method and its impact on SiGe/Si axial heterojunction abruptness. Nanotechnology. 29(35). 355602–355602. 8 indexed citations

19.

Cloarec, Jean‐Pierre, Céline Chevalier, Jacques Beauvais, et al.. (2016). pH driven addressing of silicon nanowires onto Si₃N₄/SiO₂micro-patterned surfaces. Nanotechnology. 27(29). 295602–295602. 45 indexed citations

20.

Martin, M., Damien Caliste, Reynald Alcotte, et al.. (2016). Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001). Applied Physics Letters. 109(25). 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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