G. Dambrine

4.9k total citations · 1 hit paper
137 papers, 3.2k citations indexed

About

G. Dambrine is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Dambrine has authored 137 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 124 papers in Electrical and Electronic Engineering, 31 papers in Biomedical Engineering and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Dambrine's work include Radio Frequency Integrated Circuit Design (67 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers) and Semiconductor materials and devices (27 papers). G. Dambrine is often cited by papers focused on Radio Frequency Integrated Circuit Design (67 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers) and Semiconductor materials and devices (27 papers). G. Dambrine collaborates with scholars based in France, Belgium and Spain. G. Dambrine's co-authors include A. Cappy, E. Playez, Frédéric Héliodore, F. Danneville, H. Happy, Vincent Derycke, Sylvie Lépilliet, J.‐P. Bourgoin, Jean‐Pierre Raskin and Mark C. Hersam and has published in prestigious journals such as Nano Letters, Applied Physics Letters and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

G. Dambrine

131 papers receiving 3.0k citations

Hit Papers

A new method for determining the FET small-signal equival... 1988 2026 2000 2013 1988 250 500 750 1000
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. A new method for determining the FET small-signal equivalent circuit
    1988 1.1k citations G. Dambrine, A. Cappy et al. IEEE Transactions on Microwave Theory and Techniques profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Dambrine France 26 2.8k 742 557 496 479 137 3.2k
Mridula Gupta India 32 4.3k 1.5× 421 0.6× 813 1.5× 252 0.5× 1.7k 3.5× 348 4.6k
Shawn S. H. Hsu Taiwan 24 2.1k 0.7× 338 0.5× 617 1.1× 190 0.4× 343 0.7× 184 2.3k
Erik Lind Sweden 32 2.7k 0.9× 679 0.9× 88 0.2× 508 1.0× 1.5k 3.1× 162 2.9k
Yasushi Shoji Japan 17 965 0.3× 876 1.2× 84 0.2× 720 1.5× 306 0.6× 74 1.3k
D. Neculoiu Romania 17 722 0.3× 242 0.3× 149 0.3× 367 0.7× 437 0.9× 116 1.1k
Alvin Joseph United States 26 2.4k 0.8× 291 0.4× 70 0.1× 96 0.2× 303 0.6× 196 2.4k
A. B. Kozyrev Russia 17 1.1k 0.4× 142 0.2× 125 0.2× 1.0k 2.1× 771 1.6× 148 1.6k
G.A.M. Hurkx Netherlands 19 1.6k 0.6× 386 0.5× 316 0.6× 353 0.7× 184 0.4× 72 1.9k
F. Balestra France 29 3.5k 1.2× 384 0.5× 92 0.2× 366 0.7× 489 1.0× 206 3.7k
Sylvie Lépilliet France 15 665 0.2× 205 0.3× 92 0.2× 152 0.3× 172 0.4× 58 792

Countries citing papers authored by G. Dambrine

Since Specialization
Citations

This map shows the geographic impact of G. Dambrine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Dambrine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Dambrine more than expected).

Fields of papers citing papers by G. Dambrine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Dambrine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Dambrine. The network helps show where G. Dambrine may publish in the future.

Co-authorship network of co-authors of G. Dambrine

This figure shows the co-authorship network connecting the top 25 collaborators of G. Dambrine. A scholar is included among the top collaborators of G. Dambrine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Dambrine. G. Dambrine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Berthe, Maxime, et al.. (2024). Exploring Nanorobotics Integration with Microwave and Millimeter-Wave Techniques for Advanced On-wafer Measurement. SPIRE - Sciences Po Institutional REpository. 1–6.
2.
Dambrine, G., et al.. (2021). A comparison of pad metallization in miniaturized microfabricated silicon microcantilever-based wafer probes for low contact force low skate on-wafer measurements. Journal of Micromechanics and Microengineering. 32(1). 15007–15007. 6 indexed citations
3.
4.
Dambrine, G., et al.. (2017). Near-Field Scanning Millimeter-wave Microscope Combined with a Scanning Electron Microscope. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations
5.
Wang, Fei, Nicolas Clément, D. Ducatteau, et al.. (2014). Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope. Nanotechnology. 25(40). 405703–405703. 18 indexed citations
6.
Arscott, S., et al.. (2014). Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies. Procedia Engineering. 87. 692–695. 3 indexed citations
7.
Olivier, A., Yannick Roelens, L. Desplanque, et al.. (2010). High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply. 162–165. 1 indexed citations
8.
Danneville, F., et al.. (2009). Investigation of SiGe HBT potentialities under cryogenic temperature. HAL (Le Centre pour la Communication Scientifique Directe). 121–124. 6 indexed citations
9.
Dambrine, G., et al.. (2008). MOSFETs RF Noise Optimization via Channel Engineering. IEEE Electron Device Letters. 29(1). 118–121. 12 indexed citations
10.
Curutchet, Arnaud, D. Théron, D. Ducatteau, et al.. (2008). Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors. IEEE Transactions on Microwave Theory and Techniques. 56(7). 1505–1510. 4 indexed citations
11.
Raskin, Jean‐Pierre, G. Pailloncy, Dimitri Lederer, et al.. (2008). High-Frequency Noise Performance of 60-nm Gate-Length FinFETs. IEEE Transactions on Electron Devices. 55(10). 2718–2727. 48 indexed citations
12.
Montusclat, S., Baudouin Martineau, D. Gloria, et al.. (2007). 65 nm HR SOI CMOS Technology: emergence of Millimeter-Wave SoC. HAL (Le Centre pour la Communication Scientifique Directe). 40. 555–558. 9 indexed citations
13.
Lefebvre, Éric, L. Desplanque, X. Wallart, et al.. (2007). DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs. HAL (Le Centre pour la Communication Scientifique Directe). 67–70. 1 indexed citations
14.
Chevalier, P., Laurent Rubaldo, Timothy O. Dickson, et al.. (2007). High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges. HAL (Le Centre pour la Communication Scientifique Directe). 18–23. 26 indexed citations
15.
Rengel, Raúl, María J. Martín, T. González, et al.. (2006). A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs. IEEE Transactions on Electron Devices. 53(3). 523–532. 13 indexed citations
16.
Rengel, Raúl, María J. Martín, G. Dambrine, & F. Danneville. (2006). A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs. Semiconductor Science and Technology. 21(3). 273–278. 3 indexed citations
17.
Hinojosa, Juan, K. Lmimouni, Sylvie Lépilliet, & G. Dambrine. (2002). Very high broadband electromagnetic characterization method of film‐shaped materials using coplanar. Microwave and Optical Technology Letters. 33(5). 352–355. 8 indexed citations
18.
Cappy, A., et al.. (1999). Noise Modelling in Linear and Nonlinear Devices. IEICE Transactions on Electronics. 82(6). 900–907. 3 indexed citations
19.
Dambrine, G., et al.. (1999). High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits. IEEE Transactions on Electron Devices. 46(8). 1733–1741. 55 indexed citations
20.
Cappy, A., et al.. (1997). Noise analysis in devices under non-linear operation. European Solid-State Device Research Conference. 117–124. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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