In-Kyeong Yoo

5.2k total citations · 2 hit papers
28 papers, 4.4k citations indexed

About

In-Kyeong Yoo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, In-Kyeong Yoo has authored 28 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 6 papers in Polymers and Plastics. Recurrent topics in In-Kyeong Yoo's work include Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). In-Kyeong Yoo is often cited by papers focused on Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). In-Kyeong Yoo collaborates with scholars based in South Korea, United States and Ethiopia. In-Kyeong Yoo's co-authors include David H. Seo, Kinam Kim, Myoung‐Jae Lee, U‐In Chung, Man Chang, Chang Bum Lee, Young‐Bae Kim, Seung Ryul Lee, Dongsoo Lee and Sunae Seo and has published in prestigious journals such as Science, Nature Communications and Nature Materials.

In The Last Decade

In-Kyeong Yoo

28 papers receiving 4.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2011 1.9k citations Myoung‐Jae Lee, Chang Bum Lee et al. Nature Materials profile →
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

2012 805 citations Heejun Yang, Jinseong Heo et al. Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
In-Kyeong Yoo South Korea	20	3.9k	1.7k	1.1k	968	303	28	4.4k
Ming‐Jinn Tsai Taiwan	37	5.9k 1.5×	1.7k 1.0×	1.4k 1.4×	1.4k 1.4×	174 0.6×	147	6.2k
David H. Seo South Korea	23	5.2k 1.3×	2.8k 1.6×	1.8k 1.7×	1.1k 1.1×	539 1.8×	43	6.1k
Dirk J. Wouters Belgium	41	4.8k 1.2×	1.9k 1.1×	855 0.8×	991 1.0×	376 1.2×	242	5.3k
Michael N. Kozicki United States	33	4.7k 1.2×	1.3k 0.8×	1.2k 1.2×	1.6k 1.6×	335 1.1×	152	5.0k
Changhwan Choi South Korea	38	3.8k 1.0×	1.2k 0.7×	753 0.7×	1.2k 1.2×	324 1.1×	154	4.2k
D. C. Gilmer United States	35	4.4k 1.1×	1.5k 0.9×	472 0.4×	656 0.7×	111 0.4×	106	4.6k
Gun Hwan Kim South Korea	30	4.5k 1.2×	1.6k 0.9×	1.4k 1.3×	1.4k 1.5×	131 0.4×	91	4.8k
Sunae Seo South Korea	34	5.8k 1.5×	3.0k 1.8×	2.1k 2.0×	1.2k 1.2×	594 2.0×	96	6.8k
In Kyeong Yoo South Korea	26	3.5k 0.9×	1.9k 1.1×	1.3k 1.2×	553 0.6×	470 1.6×	59	4.1k
Seung‐Eon Ahn South Korea	31	3.9k 1.0×	1.6k 0.9×	1.6k 1.5×	612 0.6×	248 0.8×	73	4.2k

Countries citing papers authored by In-Kyeong Yoo

Since Specialization

Citations

This map shows the geographic impact of In-Kyeong Yoo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by In-Kyeong Yoo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites In-Kyeong Yoo more than expected).

Fields of papers citing papers by In-Kyeong Yoo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by In-Kyeong Yoo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by In-Kyeong Yoo. The network helps show where In-Kyeong Yoo may publish in the future.

Co-authorship network of co-authors of In-Kyeong Yoo

This figure shows the co-authorship network connecting the top 25 collaborators of In-Kyeong Yoo. A scholar is included among the top collaborators of In-Kyeong Yoo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with In-Kyeong Yoo. In-Kyeong Yoo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kim, Sungho, Young‐Bae Kim, Kyung Min Kim, et al.. (2013). Performance of threshold switching in chalcogenide glass for 3D stackable selector. Symposium on VLSI Technology. 41 indexed citations

Byun, Kyung‐Eun, Hyun‐Jong Chung, Heejun Yang, et al.. (2013). Graphene for True Ohmic Contact at Metal–Semiconductor Junctions. Nano Letters. 13(9). 4001–4005. 99 indexed citations

Lee, Myoung‐Jae, Dongsoo Lee, Seong‐Ho Cho, et al.. (2013). A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory. Nature Communications. 4(1). 2629–2629. 136 indexed citations

Kim, Jongseob, Injun Hwang, Hyoji Choi, et al.. (2013). High threshold voltage p-GaN gate power devices on 200 mm Si. 315–318. 18 indexed citations

Kim, Sungho, Sae‐Jin Kim, Kyung Min Kim, et al.. (2013). Physical electro-thermal model of resistive switching in bi-layered resistance-change memory. Scientific Reports. 3(1). 1680–1680. 201 indexed citations

Lee, Seung Ryul, Young‐Bae Kim, Man Chang, et al.. (2012). Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory. 71–72. 134 indexed citations

Yang, Heejun, Jinseong Heo, Seongjun Park, et al.. (2012). Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science. 336(6085). 1140–1143. 805 indexed citations breakdown →

Kim, Young‐Bae, Seung Ryul Lee, Dongsoo Lee, et al.. (2011). Bi-layered RRAM with unlimited endurance and extremely uniform switching. Symposium on VLSI Technology. 52–53. 111 indexed citations

Lee, Myoung‐Jae, Seung‐Eon Ahn, Chang Bum Lee, et al.. (2011). A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory. ACS Applied Materials & Interfaces. 3(11). 4475–4479. 19 indexed citations

10.

Lee, Myoung‐Jae, Chang Bum Lee, Dongsoo Lee, et al.. (2011). A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures. Nature Materials. 10(8). 625–630. 1869 indexed citations breakdown →

11.

Kim, Sun Il, Jae Chul Park, Young Kim, et al.. (2011). Highly sensitive and reliable X-ray detector with HgI<inf>2</inf> photoconductor and oxide drive TFT. 53. 14.2.1–14.2.4. 4 indexed citations

12.

Choi, Sangmoo, Sangjin Park, Kwang Soo Seol, et al.. (2007). Atomic-layer deposited IrO₂nanodots for charge-trap flash-memory devices. Journal of Physics D Applied Physics. 40(5). 1426–1429. 27 indexed citations

13.

Lee, Myoung‐Jae, Youngsoo Park, B. S. Kang, et al.. (2007). 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications. 771–774. 187 indexed citations

14.

Jung, Ranju, Myoung‐Jae Lee, Sunae Seo, et al.. (2007). Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control. Applied Physics Letters. 91(2). 60 indexed citations

15.

Park, Sangjin, Yu‐Jung Cha, Youngsoo Park, et al.. (2006). Multibit memories using a structure of SiO2/partially oxidized amorphous Si∕HfO2. Applied Physics Letters. 89(3). 6 indexed citations

16.

Sim, Hyunjun, Hyejung Choi, Dongsoo Lee, et al.. (2006). Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application. 85. 758–761. 36 indexed citations

17.

Cha, Yu‐Jung, Sangjin Park, Youngsoo Park, et al.. (2006). Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition. Applied Physics Letters. 89(20). 3 indexed citations

18.

Hong, Ki‐Ha, Jongseob Kim, Sung‐Hoon Lee, et al.. (2006). Channel Engineering of Silicon Nanowire Field Effect Transistor: Non-Equilibrium Green's Function Study. 1281–1283. 2 indexed citations

19.

Kim, Soohong, Ik-Su Byun, Inrok Hwang, et al.. (2005). Giant and Stable Conductivity Switching Behaviors in ZrO₂ Films Deposited by Pulsed Laser Depositions. Japanese Journal of Applied Physics. 44(2L). L345–L345. 24 indexed citations

20.

Bae, Eunju, et al.. (2001). Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices. MRS Proceedings. 675. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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