Yang Yin Chen

1.1k total citations
19 papers, 935 citations indexed

About

Yang Yin Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Yang Yin Chen has authored 19 papers receiving a total of 935 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 2 papers in Polymers and Plastics. Recurrent topics in Yang Yin Chen's work include Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (16 papers) and Semiconductor materials and devices (10 papers). Yang Yin Chen is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (16 papers) and Semiconductor materials and devices (10 papers). Yang Yin Chen collaborates with scholars based in Belgium, Taiwan and Netherlands. Yang Yin Chen's co-authors include M. Jurczak, Dirk J. Wouters, G. Groeseneken, B. Govoreanu, A. Fantini, R. Degraeve, Gouri Sankar Kar, Ludovic Goux, Sergiu Clima and J. A. Kittl and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Yang Yin Chen

18 papers receiving 914 citations

Peers

Countries citing papers authored by Yang Yin Chen

Since Specialization

Citations

This map shows the geographic impact of Yang Yin Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yang Yin Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yang Yin Chen more than expected).

Fields of papers citing papers by Yang Yin Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yang Yin Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yang Yin Chen. The network helps show where Yang Yin Chen may publish in the future.

Co-authorship network of co-authors of Yang Yin Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Yang Yin Chen. A scholar is included among the top collaborators of Yang Yin Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yang Yin Chen. Yang Yin Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device 2016 ·Journal of Applied Physics ·Sergiu Clima, Yang Yin Chen, (unknown), Ludovic Goux, B. Govoreanu, R. Degraeve, A. Fantini, M. Jurczak, Geoffrey Pourtois	39
2	RRAMs based on anionic and cationic switching: a short overview 2014 ·physica status solidi (RRL) - Rapid Research Letters ·Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, A. Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, B. Govoreanu, R. Degraeve, Dirk J. Wouters, M. Jurczak, Wilfried Vandervorst, Stefan De Gendt, Geoffrey Pourtois	37
3	High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance 2014 ·Leqi Zhang, A. Redolfi, D. Crotti, Christoph Adelmann, Sergiu Clima, Yang Yin Chen, Karl Opsomer, Subhali Subhechha, Dirk J. Wouters, G. Groeseneken, M. Jurczak, B. Govoreanu, Stefan Cosemans, Olivier Richard, H. Bender, Paul Hendrickx, T. Witters, Hubert Hody, Vasile Paraschiv, (unknown)	2
4	On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure 2013 ·IEEE Electron Device Letters ·Yung‐Hsien Wu, Dirk J. Wouters, Paul Hendrickx, Leqi Zhang, Yang Yin Chen, L. Goux, A. Fantini, G. Groeseneken, M. Jurczak	1
5	Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study 2013 ·A. Fantini, Ludovic Goux, R. Degraeve, Dirk J. Wouters, Praveen Raghavan, Gouri Sankar Kar, Attilio Belmonte, Yang Yin Chen, B. Govoreanu, M. Jurczak	11
6	Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM 2013 ·IEEE Transactions on Electron Devices ·Yang Yin Chen, Ludovic Goux, Sergiu Clima, B. Govoreanu, R. Degraeve, Gouri Sankar Kar, A. Fantini, G. Groeseneken, Dirk J. Wouters, M. Jurczak	207
7	Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO₂\Hf\TiN RRAM Device 2013 ·ECS Transactions ·Yang Yin Chen, Geoffrey Pourtois, Sergiu Clima, Ludovic Goux, B. Govoreanu, A. Fantini, (unknown), Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	7
8	Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current 2013 ·Yang Yin Chen, (unknown), R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	85
9	Filament observation in metal-oxide resistive switching devices 2013 ·Applied Physics Letters ·Umberto Celano, Yang Yin Chen, Dirk J. Wouters, G. Groeseneken, M. Jurczak, Wilfried Vandervorst	88
10	Postcycling LRS Retention Analysis in HfO₂/Hf RRAM 1T1R Device 2013 ·IEEE Electron Device Letters ·Yang Yin Chen, M. Jurczak, R. Degraeve, B. Govoreanu, Sergiu Clima, Ludovic Goux, A. Fantini, Gouri Sankar Kar, Dirk J. Wouters, G. Groeseneken	42
11	On the Bipolar Resistive Switching Memory Using TiN/Hf/HfO₂/Si MIS Structure 2013 ·IEEE Electron Device Letters ·Yung‐Hsien Wu, Dirk J. Wouters, Paul Hendrickx, Leqi Zhang, Yang Yin Chen, Ludovic Goux, A. Fantini, G. Groeseneken, M. Jurczak	10
12	Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current 2013 ·Yang Yin Chen, (unknown), R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	48
13	Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device 2012 ·IEEE Electron Device Letters ·Yang Yin Chen, L. Goux, Johan Swerts, (unknown), Christoph Adelmann, J. A. Kittl, M. Jurczak, G. Groeseneken, Dirk J. Wouters	31
14	Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO₂\Hf\TiN RRAM Device 2012 ·ECS Meeting Abstracts ·Yang Yin Chen, Geoffrey Pourtois, Sergiu Clima, B. Govoreanu, Ludovic Goux, A. Fantini, (unknown), G. Groeseneken, Dirk J. Wouters, M. Jurczak	1
15	Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 ·Applied Physics Letters ·Yang Yin Chen, Geoffrey Pourtois, Christoph Adelmann, L. Goux, B. Govoreanu, (unknown), M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	48
16	A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory 2012 ·Applied Physics Letters ·Shimeng Yu, Yang Yin Chen, Ximeng Guan, H.‐S. Philip Wong, J. A. Kittl	55
17	Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM 2012 ·IEEE Transactions on Electron Devices ·Yang Yin Chen, B. Govoreanu, L. Goux, R. Degraeve, A. Fantini, Gouri Sankar Kar, Dirk J. Wouters, G. Groeseneken, J. A. Kittl, M. Jurczak, L. Altimime	152
18	Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation 2012 ·Yang Yin Chen, R. Degraeve, Sergiu Clima, B. Govoreanu, Ludovic Goux, A. Fantini, Gouri Sankar Kar, Geoffrey Pourtois, G. Groeseneken, Dirk J. Wouters, M. Jurczak	68
19	Electron traps at HfO2/SiOx interfaces 2008 ·Chalmers Publication Library (Chalmers University of Technology) ·Bahman Raeissi, Yang Yin Chen, (unknown), Zonghe Lai, Olof Engström	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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