Byoungil Lee

4.5k total citations · 2 hit papers
19 papers, 3.7k citations indexed

About

Byoungil Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Byoungil Lee has authored 19 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 7 papers in Polymers and Plastics. Recurrent topics in Byoungil Lee's work include Advanced Memory and Neural Computing (12 papers), Phase-change materials and chalcogenides (8 papers) and Transition Metal Oxide Nanomaterials (7 papers). Byoungil Lee is often cited by papers focused on Advanced Memory and Neural Computing (12 papers), Phase-change materials and chalcogenides (8 papers) and Transition Metal Oxide Nanomaterials (7 papers). Byoungil Lee collaborates with scholars based in United States, Belgium and South Korea. Byoungil Lee's co-authors include H.‐S. Philip Wong, Yi Wu, Shimeng Yu, Rakesh Jeyasingh, Duygu Kuzum, H.-S. Philip Wong, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen and Ming‐Jinn Tsai and has published in prestigious journals such as Nano Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

Byoungil Lee

19 papers receiving 3.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Metal–Oxide RRAM

2012 2.2k citations H.-S. Philip Wong, Heng-Yuan Lee et al. Proceedings of the IEEE profile →
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

2011 1.0k citations Duygu Kuzum, Rakesh Jeyasingh et al. Nano Letters profile →

Peers

Countries citing papers authored by Byoungil Lee

Since Specialization

Citations

This map shows the geographic impact of Byoungil Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Byoungil Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Byoungil Lee more than expected).

Fields of papers citing papers by Byoungil Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Byoungil Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Byoungil Lee. The network helps show where Byoungil Lee may publish in the future.

Co-authorship network of co-authors of Byoungil Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Byoungil Lee. A scholar is included among the top collaborators of Byoungil Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Byoungil Lee. Byoungil Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	Process Improvements for 7^th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production 2023 ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Byoungil Lee, Sejun Park, Jae-Duk Lee, (unknown), Su Jin Ahn, Sung‐Hoi Hur	1
2	Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory 2012 ·Japanese Journal of Applied Physics ·Chiyui Ahn, Byoungil Lee, Rakesh Jeyasingh, Mehdi Asheghi, (unknown), Kenneth E. Goodson, H.‐S. Philip Wong	2
3	Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory 2012 ·Japanese Journal of Applied Physics ·Chiyui Ahn, Byoungil Lee, Rakesh Jeyasingh, Mehdi Asheghi, (unknown), Kenneth E. Goodson, H.‐S. Philip Wong	7
4	Metal–Oxide RRAM breakdown → 2012 ·Proceedings of the IEEE ·H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, (unknown), Ming‐Jinn Tsai	2192
5	Integration of Nanoelectromechanical Relays With Silicon nMOS 2011 ·IEEE Transactions on Electron Devices ·Soogine Chong, Byoungil Lee, Subhasish Mitra, Roger T. Howe, H.‐S. Philip Wong	20
6	Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing breakdown → 2011 ·Nano Letters ·Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee, H.‐S. Philip Wong	1003
7	Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit 2011 ·Soogine Chong, Byoungil Lee, (unknown), J. Provine, Subhasish Mitra, Roger T. Howe, H.‐S. Philip Wong	52
8	Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation 2011 ·Journal of Applied Physics ·Yi Wu, Shimeng Yu, Byoungil Lee, Philip Wong	84
9	Fabrication and Characterization of Nanoscale NiO Resistance Change Memory (RRAM) Cells With Confined Conduction Paths 2011 ·IEEE Transactions on Electron Devices ·Byoungil Lee, H.‐S. Philip Wong	13
10	Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage 2011 ·IEEE Transactions on Electron Devices ·Sang‐Bum Kim, Byoungil Lee, Mehdi Asheghi, (unknown), John P. Reifenberg, Kenneth E. Goodson, H.‐S. Philip Wong	57
11	Efficiency Calibration of Bed Type Whole Body Counter Using Monte Carlo Simulations and Application to Intake Estimation of 131I 2011 ·Progress in Nuclear Science and Technology ·(unknown), Byoungil Lee, (unknown), (unknown)	2
12	Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) 2011 ·H.‐S. Philip Wong, Sang‐Bum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Jeyasingh, Shimeng Yu	10
13	Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage 2011 ·Journal of Applied Physics ·Chiyui Ahn, Byoungil Lee, Rakesh Jeyasingh, Mehdi Asheghi, G.A.M. Hurkx, Kenneth E. Goodson, H.‐S. Philip Wong	13
14	$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current 2010 ·IEEE Electron Device Letters ·Yi Wu, Byoungil Lee, H.‐S. Philip Wong	134
15	Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage 2010 ·Sang‐Bum Kim, Byoungil Lee, Mehdi Asheghi, G.A.M. Hurkx, John P. Reifenberg, Kenneth E. Goodson, H.‐S. Philip Wong	27
16	Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM) 2010 ·Zenodo (CERN European Organization for Nuclear Research) ·H.‐S. Philip Wong, Sang‐Bum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Jeyasingh, Shimeng Yu	11
17	Ultra-low power Al<inf>2</inf>O<inf>3</inf>-based RRAM with 1μA reset current 2010 ·Yi Wu, Byoungil Lee, H.‐S. Philip Wong	20
18	Fabrication and characterization of emerging nanoscale memory 2009 ·Sang‐Bum Kim, Yuan Zhang, Byoungil Lee, Marissa A. Caldwell, H.‐S. Philip Wong	6
19	NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path 2006 ·Byoungil Lee, H.‐S. Philip Wong	15

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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