Chenhsin Lien

4.3k total citations · 1 hit paper
127 papers, 3.4k citations indexed

About

Chenhsin Lien is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Chenhsin Lien has authored 127 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 114 papers in Electrical and Electronic Engineering, 38 papers in Materials Chemistry and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Chenhsin Lien's work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Advanced Memory and Neural Computing (34 papers). Chenhsin Lien is often cited by papers focused on Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Advanced Memory and Neural Computing (34 papers). Chenhsin Lien collaborates with scholars based in Taiwan, China and United States. Chenhsin Lien's co-authors include P. J. Tzeng, Yen‐Fu Lin, Shih‐Hsien Yang, M.-J. Tsai, Tong Wu, Chien-Ting Lin, Ming‐Jinn Tsai, M.‐J. Tsai, Ko‐Chun Lee and Feng‐Shou Yang and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Chenhsin Lien

124 papers receiving 3.3k citations

Hit Papers

Low power and high speed bipolar switching with a thin re... 2008 2026 2014 2020 2008 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chenhsin Lien Taiwan 28 2.9k 1.3k 412 384 361 127 3.4k
Sergiu Clima Belgium 35 3.1k 1.1× 1.6k 1.2× 424 1.0× 465 1.2× 274 0.8× 149 3.6k
Dmitry K. Polyushkin Austria 13 1.7k 0.6× 1.3k 1.0× 149 0.4× 217 0.6× 197 0.5× 30 2.4k
Dmitry Veksler United States 23 2.2k 0.8× 540 0.4× 152 0.4× 170 0.4× 767 2.1× 103 2.6k
Dirk J. Wouters Belgium 41 4.8k 1.6× 1.9k 1.4× 855 2.1× 991 2.6× 200 0.6× 242 5.3k
William M. Tong United States 16 956 0.3× 491 0.4× 137 0.3× 347 0.9× 179 0.5× 49 1.5k
Xiao Gong Singapore 33 3.8k 1.3× 1.2k 0.9× 190 0.5× 214 0.6× 901 2.5× 295 4.3k
Martin Salinga Germany 27 3.1k 1.1× 3.0k 2.3× 851 2.1× 256 0.7× 281 0.8× 46 4.3k
Sabina Spiga Italy 32 2.7k 0.9× 1.2k 0.9× 343 0.8× 594 1.5× 295 0.8× 133 2.9k
Stefano Larentis United States 18 1.7k 0.6× 2.2k 1.7× 246 0.6× 336 0.9× 665 1.8× 21 3.2k
Shi‐Jun Liang China 24 2.3k 0.8× 2.1k 1.6× 342 0.8× 412 1.1× 350 1.0× 50 3.5k

Countries citing papers authored by Chenhsin Lien

Since Specialization
Citations

This map shows the geographic impact of Chenhsin Lien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chenhsin Lien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chenhsin Lien more than expected).

Fields of papers citing papers by Chenhsin Lien

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chenhsin Lien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chenhsin Lien. The network helps show where Chenhsin Lien may publish in the future.

Co-authorship network of co-authors of Chenhsin Lien

This figure shows the co-authorship network connecting the top 25 collaborators of Chenhsin Lien. A scholar is included among the top collaborators of Chenhsin Lien based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chenhsin Lien. Chenhsin Lien is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hung, Wei‐Chun, Ting‐Chang Chang, Mao‐Chou Tai, et al.. (2023). Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology. IEEE Transactions on Electron Devices. 70(7). 3419–3423. 2 indexed citations
2.
Chang, Ting‐Chang, et al.. (2022). Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment. IEEE Transactions on Electron Devices. 69(6). 3181–3185. 5 indexed citations
3.
Lin, Che‐Yi, Feng‐Shou Yang, Mengjiao Li, et al.. (2022). Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering. ACS Applied Materials & Interfaces. 14(36). 41156–41164. 3 indexed citations
4.
Gao, Caifang, Feng‐Shou Yang, Ko‐Chun Lee, et al.. (2021). Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity. npj 2D Materials and Applications. 5(1). 12 indexed citations
5.
Lee, Ko‐Chun, Mengjiao Li, Yu‐Hsiang Chang, et al.. (2020). Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics. Nano Energy. 77. 105258–105258. 40 indexed citations
6.
Yang, Feng‐Shou, Mengjiao Li, Jiann‐Yeu Chen, et al.. (2020). Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features. Nature Communications. 11(1). 145 indexed citations
7.
Chen, Min-Chen, Ting‐Chang Chang, Chenhsin Lien, et al.. (2020). Impact of electrode thermal conductivity on high resistance state level in HfO 2 -based RRAM. Journal of Physics D Applied Physics. 53(39). 395101–395101. 9 indexed citations
8.
Gao, Caifang, Mengjiao Li, Ko‐Chun Lee, et al.. (2020). Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics. Advanced Functional Materials. 31(5). 19 indexed citations
9.
Tsai, Tsung‐Han, Feng‐Shou Yang, Po‐Hsun Ho, et al.. (2019). High-Mobility InSe Transistors: The Nature of Charge Transport. ACS Applied Materials & Interfaces. 11(39). 35969–35976. 31 indexed citations
10.
Shao, Jingjing, Wan-Ching Su, Ting‐Chang Chang, et al.. (2019). Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. Journal of Physics D Applied Physics. 53(8). 85104–85104. 5 indexed citations
11.
Yang, Shih‐Hsien, Yong Xu, Che‐Yi Lin, et al.. (2018). Atomically thin van der Waals tunnel field-effect transistors and its potential for applications. Nanotechnology. 30(10). 105201–105201. 21 indexed citations
12.
Chang, Ting‐Chang, et al.. (2017). The Impact of Different TiN Capping Metal Thicknesses on High-k Oxygen Vacancies in n-MOSFETs. IEEE Transactions on Device and Materials Reliability. 17(4). 799–801. 3 indexed citations
13.
Lien, Chenhsin, et al.. (2016). RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors. IEEE Transactions on Electron Devices. 63(12). 4603–4609. 6 indexed citations
14.
Lee, Jian‐Hsing, et al.. (2014). A voltage base electrothermal model for the interconnection and E-Fuse under the DC and pulse stresses. EL.4.1–EL.4.6. 8 indexed citations
15.
Shih, Chun-Hsing, Mingkun Huang, Wen-Fa Wu, et al.. (2011). Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory. IEEE Transactions on Electron Devices. 58(4). 1257–1263. 1 indexed citations
16.
Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2011). Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer. IEEE Electron Device Letters. 32(3). 390–392. 30 indexed citations
17.
Chen, Y. S., H. Y. Lee, P. S. Chen, et al.. (2009). Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. 1–4. 170 indexed citations
18.
Ho, Ching-Yuan, et al.. (2008). Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future nand Flash Memory. IEEE Electron Device Letters. 29(11). 1199–1202. 15 indexed citations
19.
Chen, Shih-Ching, Ting‐Chang Chang, Po‐Tsun Liu, et al.. (2006). High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels. Thin Solid Films. 515(3). 1112–1116.
20.
Lien, Chenhsin, et al.. (1995). Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator. Journal of Applied Physics. 77(1). 11–16. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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