B. Benbakhti

528 total citations
39 papers, 412 citations indexed

About

B. Benbakhti is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Benbakhti has authored 39 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Benbakhti's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and GaN-based semiconductor devices and materials (16 papers). B. Benbakhti is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and GaN-based semiconductor devices and materials (16 papers). B. Benbakhti collaborates with scholars based in United Kingdom, Belgium and France. B. Benbakhti's co-authors include K. Kálna, A. Soltani, J.C. de Jaeger, Michel Rousseau, A. BenMoussa, Zhigang Ji, J. F. Zhang, Y.M. Chong, B. Giordanengo and Wenjun Zhang and has published in prestigious journals such as Applied Physics Letters, IEEE Access and Journal of Physics D Applied Physics.

In The Last Decade

B. Benbakhti

39 papers receiving 401 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Benbakhti United Kingdom 12 305 156 125 98 66 39 412
M. Hirsch Germany 7 254 0.8× 165 1.1× 91 0.7× 76 0.8× 116 1.8× 19 344
Tianli Duan China 9 237 0.8× 199 1.3× 105 0.8× 126 1.3× 38 0.6× 20 337
Ivor Guiney United Kingdom 12 269 0.9× 252 1.6× 63 0.5× 121 1.2× 65 1.0× 41 349
Izak Baranowski United States 11 343 1.1× 342 2.2× 112 0.9× 235 2.4× 116 1.8× 16 487
Zhe Cheng China 12 173 0.6× 179 1.1× 78 0.6× 85 0.9× 72 1.1× 37 289
Yiqiang Ni China 13 225 0.7× 340 2.2× 160 1.3× 222 2.3× 65 1.0× 42 426
R. Zhang China 12 108 0.4× 143 0.9× 148 1.2× 102 1.0× 101 1.5× 26 309
Wei-Hung Kuo Taiwan 10 253 0.8× 239 1.5× 162 1.3× 135 1.4× 72 1.1× 36 386
Yumin Zhang China 10 171 0.6× 200 1.3× 169 1.4× 110 1.1× 68 1.0× 49 320
P. Murugapandiyan India 12 284 0.9× 254 1.6× 84 0.7× 121 1.2× 67 1.0× 40 379

Countries citing papers authored by B. Benbakhti

Since Specialization
Citations

This map shows the geographic impact of B. Benbakhti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Benbakhti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Benbakhti more than expected).

Fields of papers citing papers by B. Benbakhti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Benbakhti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Benbakhti. The network helps show where B. Benbakhti may publish in the future.

Co-authorship network of co-authors of B. Benbakhti

This figure shows the co-authorship network connecting the top 25 collaborators of B. Benbakhti. A scholar is included among the top collaborators of B. Benbakhti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Benbakhti. B. Benbakhti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Benbakhti, B., et al.. (2020). A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 67(5). 1924–1930. 14 indexed citations
2.
Benbakhti, B., et al.. (2020). Mechanisms of a Rectifying TiN Gate Contact for AlGaN$/$GaN HEMTs on Silicon Substrate. IEEE Transactions on Nanotechnology. 19. 682–688. 6 indexed citations
3.
Chai, Zheng, Wei Dong Zhang, J. F. Zhang, et al.. (2018). Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution. IEEE Transactions on Electron Devices. 65(3). 970–977. 9 indexed citations
4.
Benbakhti, B., et al.. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access. 6. 42721–42728. 5 indexed citations
5.
Kálna, K., et al.. (2017). Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices. 37–40. 4 indexed citations
6.
Benbakhti, B., et al.. (2017). Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. ECS Journal of Solid State Science and Technology. 6(11). S3040–S3043. 8 indexed citations
7.
Benbakhti, B., et al.. (2017). Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures. IEEE Access. 5. 20946–20952. 15 indexed citations
8.
Benbakhti, B., et al.. (2016). Device and Circuit Performance of the Future Hybrid III–V and Ge-Based CMOS Technology. IEEE Transactions on Electron Devices. 63(10). 3893–3899. 5 indexed citations
9.
Zhang, Wei Dong, J. F. Zhang, B. Benbakhti, et al.. (2016). A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE Transactions on Electron Devices. 63(10). 3830–3836. 9 indexed citations
10.
Ma, Jun, J. F. Zhang, Zhigang Ji, et al.. (2013). Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure. Microelectronic Engineering. 109. 43–45. 1 indexed citations
11.
Chan, Ka‐Hou, B. Benbakhti, Craig Riddet, J.R. Watling, & A. Asenov. (2011). Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width. 1–4. 1 indexed citations
12.
Benbakhti, B., et al.. (2011). Monte Carlo Study of Ultimate Channel Scaling in Si and In$_{\rm 0.3}$Ga$_{\rm 0.7}$As Bulk MOSFETs. IEEE Transactions on Nanotechnology. 10(6). 1424–1432. 16 indexed citations
13.
Benbakhti, B., Ka‐Hou Chan, K. Kálna, et al.. (2011). Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach. Solid-State Electronics. 63(1). 14–18. 3 indexed citations
14.
Soltani, A., Jean-Claude Gerbedoen, Michel Rousseau, et al.. (2010). Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes. Journal of Physics D Applied Physics. 43(46). 465104–465104. 18 indexed citations
15.
Benbakhti, B., et al.. (2009). Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7As MOSFETs. Journal of Physics Conference Series. 193. 12122–12122. 1 indexed citations
16.
Benbakhti, B., K. Kálna, Dennis Lin, et al.. (2009). Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures. Microelectronics Reliability. 50(3). 360–364. 21 indexed citations
17.
Benbakhti, B., K. Kálna, Gary W. Paterson, et al.. (2009). Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering. 86(7-9). 1564–1567. 7 indexed citations
18.
Benbakhti, B., et al.. (2006). Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications. HAL (Le Centre pour la Communication Scientifique Directe). 9. 363–366. 3 indexed citations
19.
Benbakhti, B., M. ROUSSEAU, A. Soltani, & J.C. de Jaeger. (2006). Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling. IEEE Transactions on Electron Devices. 53(9). 2237–2242. 14 indexed citations
20.
Benbakhti, B., et al.. (2006). Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal. 38(1). 7–13. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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