N. Cherkashin

2.8k citations

146 papers · 2.2k indexed · h-index 27

Impact in

Structural Biology top 2%
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Structural Biology 8
Condensed Matter Physics 33
- GaN-based semiconductor devices and materials 32

Co-authors: A. Claverie Martin Hÿtch F. Cristiano P. Normand D. Tsoukalas H. Coffin Jean‐Michel Hartmann Panagiotis Dimitrakis
Journals: Journal of Applied Physics (19 papers)Applied Physics Letters (14 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (9 papers)Materials Science and Engineering B (6 papers)Semiconductor Science and Technology (6 papers)
Partner nations: France Russia Germany

In The Last Decade

N. Cherkashin

140 papers receiving 2.1k citations

Peers

Countries citing papers authored by N. Cherkashin

Since Specialization

Citations

This map shows the geographic impact of N. Cherkashin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Cherkashin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Cherkashin more than expected).

Fields of papers citing papers by N. Cherkashin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Cherkashin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Cherkashin. The network helps show where N. Cherkashin may publish in the future.

Co-authors

The 25 scholars most cited alongside N. Cherkashin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Cherkashin Line = papers co-authored together N. Cherkashin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO ₃ Films on Silicon ACS Nano ·Ibukun Olaniyan, Alfredo Blázquez Martínez, Valentin Väinö Hevelke, Sven Wiesner, Rong Wu, Thanh Luan Phan, Robin Cours, N. Cherkashin, Sylvie Schamm‐Chardon, Dong-Jik Kim, Catherine Dubourdieu	2025	0
2	High temperature evolution of a confined silicon layer Journal of Applied Physics ·Maëlle Le Cunff, F. Rieutord, Didier Landru, Oleg Kononchuk, N. Cherkashin	2024	2
3	Shaping single crystalline BaTiO₃ nanostructures by focused neon or helium ion milling Nanotechnology ·Ibukun Olaniyan, Sebastian W. Schmitt, J. Albert, (unknown), Cécile Marcelot, Robin Cours, Veeresh Deshpande, N. Cherkashin, Sylvie Schamm‐Chardon, Dong‐Joo Kim, Catherine Dubourdieu	2024	2
4	Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon Nature Communications ·Ibukun Olaniyan, Iurii A. Tikhonov, Valentin Väinö Hevelke, Sven Wiesner, Leifeng Zhang, A. G. Razumnaya, N. Cherkashin, Sylvie Schamm‐Chardon, Igor Lukyanchuk, Dong-Jik Kim, Catherine Dubourdieu	2024	6
5	Electromechanically Coupled III-N Quantum Dots Nanomaterials ·Daniele Barettin, Alexei V. Sakharov, A. F. Tsatsul’nikov, A. E. Nikolaev, N. Cherkashin	2023	1
6	Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice Ultramicroscopy ·N. Cherkashin, Antonin Louiset, Adrian Chmielewski, Dong-Jik Kim, Catherine Dubourdieu, Sylvie Schamm‐Chardon	2023	10
7	Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs Nanomaterials ·Daniele Barettin, Alexei V. Sakharov, A. F. Tsatsul’nikov, A. E. Nikolaev, Alessandro Pecchia, Matthias Auf der Maur, S. Yu. Karpov, N. Cherkashin	2023	3
8	Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Journal of Applied Physics ·Enrico Di Russo, N. Cherkashin, M. Korytov, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, Bastien Bonef, Ivan Blum, Jonathan Houard, G. Da Costa, D. Blavette, Lorenzo Rigutti	2019	18
9	Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C Solid-State Electronics ·(unknown), (unknown), M. Agustin, V. A. Shchukin, J.‐R. Kropp, N. N. Ledentsov, Łukasz Chorchos, J. P. Turkiewicz, Zuhaib Khan, Chen-Lung Cheng, Jin‐Wei Shi, N. Cherkashin	2019	13
10	Electron microscopy by specimen design: application to strain measurements Scientific Reports ·N. Cherkashin, Thibaud Denneulin, Martin Hÿtch	2017	18
11	(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range Semiconductor Science and Technology ·N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, N. Cherkashin	2017	4
12	Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes Nanotechnology ·Daniele Barettin, Matthias Auf der Maur, Aldo Di Carlo, Alessandro Pecchia, A. F. Tsatsul’nikov, W. V. Lundin, Alexei V. Sakharov, A. E. Nikolaev, M. Korytov, N. Cherkashin, Martin Hÿtch, S. Yu. Karpov	2017	17
13	High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed Scientific Reports ·Charles Renard, Timothée Molière, N. Cherkashin, José Alvarez, Laëtitia Vincent, Alexandre Jaffré, Géraldine Hallais, J.P. Connolly, Denis Mencaraglia, D. Bouchier	2016	12
14	Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Journal of Applied Physics ·Konstantinos Pantzas, G. Patriarche, David Troadec, Mathieu Kociak, N. Cherkashin, Martin Hÿtch, Julien Barjon, Christian Tanguy, T. Rivera, Suresh Sundaram, A. Ougazzaden	2015	18
15	Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers Semiconductors ·W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. Cherkashin, A. F. Tsatsul’nikov	2014	9
16	Dynamic scattering theory for dark-field electron holography of 3D strain fields Ultramicroscopy ·Axel Lubk, Elsa Javon, N. Cherkashin, S. Reboh, Christophe Gatel, Martin Hÿtch	2013	27
17	Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires Nanotechnology ·Laetitia Vincent, Rym Boukhicha, N. Cherkashin, S. Reboh, G. Patriarche, Charles Renard, Vy Yam, Frédéric Fossard, D. Bouchier	2012	2
18	End of range defects in Ge Journal of Applied Physics ·S. Koffel, N. Cherkashin, Florent Houdellier, Martin Hÿtch, G. Benassayag, P. Scheiblin, A. Claverie	2009	33
19	Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS Ultramicroscopy ·(unknown), C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, Gérard Assayag, A. Claverie, Marcel Tencé, C. Colliex	2007	63
20	Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots Physica B Condensed Matter ·M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. Cherkashin, V. V. Emtsev	1999	20

About N. Cherkashin

N. Cherkashin is a scholar working on Structural Biology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Computational Mechanics, having authored 146 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (42 papers), Silicon and Solar Cell Technologies (41 papers), Semiconductor materials and devices (39 papers), Integrated Circuits and Semiconductor Failure Analysis (34 papers), GaN-based semiconductor devices and materials (32 papers), Ion-surface interactions and analysis (26 papers), Semiconductor materials and interfaces (23 papers) and Silicon Nanostructures and Photoluminescence (22 papers). The work is most often cited by research in Structural Biology (78 citations), Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (851 citations), Condensed Matter Physics (249 citations) and Materials Chemistry (938 citations). N. Cherkashin has collaborated with scholars based in France, Russia and Germany. Frequent co-authors include A. Claverie, Martin Hÿtch, F. Cristiano, P. Normand, D. Tsoukalas, H. Coffin, Jean‐Michel Hartmann, Panagiotis Dimitrakis, S. Reboh and N. Daghbouj. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Materials Science and Engineering B and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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