K.K. Bourdelle

2.9k total citations
120 papers, 1.9k citations indexed

About

K.K. Bourdelle is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K.K. Bourdelle has authored 120 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 30 papers in Biomedical Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K.K. Bourdelle's work include Semiconductor materials and devices (67 papers), Advancements in Semiconductor Devices and Circuit Design (61 papers) and Integrated Circuits and Semiconductor Failure Analysis (36 papers). K.K. Bourdelle is often cited by papers focused on Semiconductor materials and devices (67 papers), Advancements in Semiconductor Devices and Circuit Design (61 papers) and Integrated Circuits and Semiconductor Failure Analysis (36 papers). K.K. Bourdelle collaborates with scholars based in France, Germany and Denmark. K.K. Bourdelle's co-authors include S. Mantl, Qing‐Tai Zhao, Stefan Trellenkamp, Lars Knoll, A. Schäfer, A. Nichau, Renato Amaral Minamisawa, O. Faynot, A. T. Fiory and P. Perreau and has published in prestigious journals such as Nature Communications, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

K.K. Bourdelle

117 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K.K. Bourdelle France 22 1.7k 523 336 307 166 120 1.9k
Hernando García United States 16 637 0.4× 391 0.7× 300 0.9× 514 1.7× 191 1.2× 43 1.1k
C. Claeys Belgium 20 1.6k 0.9× 216 0.4× 258 0.8× 398 1.3× 56 0.3× 164 1.7k
D.P. Brunco Belgium 28 1.4k 0.8× 300 0.6× 583 1.7× 376 1.2× 147 0.9× 77 1.8k
T. Yonehara Japan 15 814 0.5× 316 0.6× 509 1.5× 233 0.8× 46 0.3× 54 1000
Roberto Bergamaschini Italy 16 438 0.3× 282 0.5× 364 1.1× 320 1.0× 83 0.5× 47 721
D. Fathy United States 17 1.1k 0.7× 176 0.3× 489 1.5× 371 1.2× 387 2.3× 48 1.4k
H. L. Hartnagel Germany 16 1.1k 0.6× 228 0.4× 571 1.7× 411 1.3× 635 3.8× 103 1.5k
G. H. Schwuttke United States 19 921 0.5× 181 0.3× 404 1.2× 407 1.3× 123 0.7× 65 1.2k
P.A. Stolk Netherlands 26 3.1k 1.9× 238 0.5× 643 1.9× 1.3k 4.3× 785 4.7× 88 3.4k
W. Seifert Germany 21 1.3k 0.7× 228 0.4× 551 1.6× 682 2.2× 87 0.5× 129 1.5k

Countries citing papers authored by K.K. Bourdelle

Since Specialization
Citations

This map shows the geographic impact of K.K. Bourdelle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.K. Bourdelle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.K. Bourdelle more than expected).

Fields of papers citing papers by K.K. Bourdelle

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.K. Bourdelle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.K. Bourdelle. The network helps show where K.K. Bourdelle may publish in the future.

Co-authorship network of co-authors of K.K. Bourdelle

This figure shows the co-authorship network connecting the top 25 collaborators of K.K. Bourdelle. A scholar is included among the top collaborators of K.K. Bourdelle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.K. Bourdelle. K.K. Bourdelle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Luong, Gia Vinh, Stefan Trellenkamp, Qing‐Tai Zhao, S. Mantl, & K.K. Bourdelle. (2015). Strained Si nanowire GAA n-TFETs for low supply voltages. 33. 65–68. 5 indexed citations
2.
Garros, X., F. Andrieu, P. Nguyen, et al.. (2015). Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. Solid-State Electronics. 113. 127–131. 3 indexed citations
3.
4.
Knoll, Lars, Qing‐Tai Zhao, A. Nichau, et al.. (2013). Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors. IEEE Electron Device Letters. 34(6). 813–815. 161 indexed citations
5.
Pelaz, Lourdes, Iván Santos, Ray Duffy, Frank Torregrosa, & K.K. Bourdelle. (2012). ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIPC. 1496.
6.
Minamisawa, Renato Amaral, et al.. (2012). 引張Si/圧縮Si 0.5 Ge 0.5 /引張歪Siヘテロ構造へのp型イオン注入. Journal of The Electrochemical Society. 159(1). 44–51. 2 indexed citations
7.
Minamisawa, Renato Amaral, Martin Süess, Ralph Spolenak, et al.. (2012). Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%. Nature Communications. 3(1). 1096–1096. 118 indexed citations
8.
Minamisawa, Renato Amaral, Matthias Schmidt, Lars Knoll, et al.. (2012). Hole Transport in Strained $\hbox{Si}_{0.5} \hbox{Ge}_{0.5}$ QW-MOSFETs With $\langle\hbox{110}\rangle$ and $\langle\hbox{100}\rangle$ Channel Orientations. IEEE Electron Device Letters. 33(8). 1105–1107. 9 indexed citations
9.
Brown, A. R., Nicolas Daval, K.K. Bourdelle, Bich-Yen Nguyen, & Asen Asenov. (2012). Simulation analysis of process-induced variability in nanoscale SOI and bulk FinFETs. 1–2. 2 indexed citations
10.
Knoll, Lars, Qing‐Tai Zhao, R. Lupták, et al.. (2011). 20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi<inf>2</inf> source/drain. 87. 1–4. 4 indexed citations
11.
Zhao, Qing‐Tai, S. Feste, Lars Knoll, et al.. (2011). NiSi nano-contacts to strained and unstrained silicon nanowires. 1–3. 3 indexed citations
12.
Zhao, Qing‐Tai, Matthias Schmidt, S. Richter, et al.. (2011). Tunneling field-effect transistor with a strained Si channel and a Si<inf>0.5</inf>Ge<inf>0.5</inf> source. 251–254. 4 indexed citations
13.
Nguyen, P., K.K. Bourdelle, Nicolas Daval, et al.. (2008). Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H. Journal of Applied Physics. 104(11). 4 indexed citations
14.
Villeneuve-Faure, Christina, et al.. (2007). Raman spectroscopy study of damage and strain in (001) and (011) Si induced by hydrogen or helium implantation. Journal of Applied Physics. 102(9). 7 indexed citations
15.
Tiberj, Antoine, Vincent Paillard, Nicolas Daval, et al.. (2004). Stress Metrology : The challenge for the next generation of engineered wafers. MRS Proceedings. 809. 5 indexed citations
16.
Sørensen, Anders Hay, E. Johnson, K.K. Bourdelle, et al.. (1997). Sizes, structures and phase transformations of nano-sized thallium inclusions in aluminium. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 75(6). 1533–1552. 9 indexed citations
17.
Bourdelle, K.K., A. Johansen, & E. Johnson. (1996). Channeling study of melting and solidification of lead nanocrystals in aluminium. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 478–482. 8 indexed citations
18.
Bourdelle, K.K., et al.. (1994). Monte Carlo simulation of ion-beam channeling in YBa2Cu3O7. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 94(4). 523–529. 15 indexed citations
19.
Johnson, E.S., B. Schmidt, K.K. Bourdelle, et al.. (1992). Phase Transformation and Modification by Beam-Solid Interactions. University of Southern Denmark Research Portal (University of Southern Denmark). 3 indexed citations
20.
Chechenin, N. G., K.K. Bourdelle, & А. В. Суворов. (1990). A channeling study of ion-produced disorder in silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 48(1-4). 235–239. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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