H.‐J. Gossmann

6.1k citations

127 papers · 4.8k indexed · 2 hit papers · h-index 37

Impact in

Structural Biology top 1%
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena

Papers in

Surfaces, Coatings and Films 21
- Electron and X-Ray Spectroscopy Techniques 21
Atomic and Molecular Physics, and Optics 77
- Semiconductor materials and interfaces 59
- Surface and Thin Film Phenomena 17

Co-authors: D. J. Eaglesham J. M. Poate P.A. Stolk D. C. Jacobson T. E. Haynes L. C. Feldman C.S. Rafferty George H. Gilmer
Journals: Applied Physics Letters (28 papers)Journal of Applied Physics (10 papers)Physical Review Letters (9 papers)Surface Science (8 papers)Physical review. B, Condensed matter (7 papers)
Partner nations: United States Germany Spain

In The Last Decade

H.‐J. Gossmann

123 papers receiving 4.6k citations

Hit Papers

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Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si 2002 · 335 citations

Peers

Countries citing papers authored by H.‐J. Gossmann

Since Specialization

Citations

This map shows the geographic impact of H.‐J. Gossmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐J. Gossmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐J. Gossmann more than expected).

Fields of papers citing papers by H.‐J. Gossmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐J. Gossmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐J. Gossmann. The network helps show where H.‐J. Gossmann may publish in the future.

Co-authors

The 25 scholars most cited alongside H.‐J. Gossmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H.‐J. Gossmann Line = papers co-authored together H.‐J. Gossmann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy Physical Review Letters ·Antonio Millastre Benito, Ilja Makkonen, V. Ranki, M. J. Puska, K. Saarinen, H.‐J. Gossmann	2005	33
2	GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition Journal of Electronic Materials ·Carolina Lumi Taya, G. D. Wilk, Bingzheng Yang, J. Kwo, H.‐J. Gossmann, M. Frei, J. P. Mannáerts, M. Sergent, M. Hong, K.K. Ng, J. Bude	2004	14
3	The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·V Leena Ranjini, K. Nordlund, Hanna Stegared, H.‐J. Gossmann, Nana Ma, Madhavi Srinivasan, F. Bénistant, Lap Chan	2004	6
4	Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides Journal of Applied Physics ·Y. F. Chong, H.‐J. Gossmann, Michael O. Thompson, Sang Mo Yang, K. L. Pey, Andrew T. S. Wee	2004	2
5	Evidence for a New Class of Defects in Highlyn-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes Physical Review Letters ·Paul M. Voyles, D. J. Chadi, P. H. Citrin, David A. Muller, J. L. Grazul, Paul Northrup, H.‐J. Gossmann	2003	27
6	Enhanced low temperature electrical activation of B in Si Applied Physics Letters ·R. Kalyanaraman, V. C. Venezia, Lourdes Pelaz, T. E. Haynes, H.‐J. Gossmann, C.S. Rafferty	2003	15
7	Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si Nature ·Paul M. Voyles, David A. Muller, J. L. Grazul, P. H. Citrin, H.‐J. Gossmann Hit paper breakdown →	2002	335
8	Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion Applied Physics Letters ·Lourdes Pelaz, George H. Gilmer, V. C. Venezia, H.‐J. Gossmann, M. Jaraı́z, J. Barbolla	1999	34
9	Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon Physica B Condensed Matter ·P. H. Citrin, David A. Muller, H.‐J. Gossmann, Richard Vanfleet, Paul Northrup	1999	5
10	Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film Journal of Applied Physics ·S. B. Herner, K. S. Jones, H.‐J. Gossmann, R. T. Tung, J. M. Poate, H. S. Luftman	1997	3
11	Transient enhanced diffusion of Sb and B due to MeV silicon implants Applied Physics Letters ·D. J. Eaglesham, T. E. Haynes, H.‐J. Gossmann, D. C. Jacobson, P.A. Stolk, J. M. Poate	1997	37
12	Simulation of cluster evaporation and transient enhanced diffusion in silicon Applied Physics Letters ·C.S. Rafferty, George H. Gilmer, M. Jaraı́z, D. J. Eaglesham, H.‐J. Gossmann	1996	120
13	Germanium partitioning in silicon during rapid solidification Journal of Applied Physics ·D.P. Brunco, Michael O. Thompson, Boyan Xu, Michael J. Aziz, H.‐J. Gossmann	1995	69
14	Properties of Point-Defects in Si for Process Modeling MRS Proceedings ·H.‐J. Gossmann, C.S. Rafferty, P.A. Stolk, D. J. Eaglesham, George H. Gilmer, J. M. Poate, H.-H. Vuong, 哲三星, Michael O. Thompson	1995	3
15	Electron-beam induced current determination of shallow junction depth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Eugene A. Fitzgerald, H.‐J. Gossmann, F. C. Unterwald, H. S. Luftman, D. Monroe	1994	7
16	Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films Physical review. B, Condensed matter ·H.‐J. Gossmann, F. C. Unterwald	1993	28
17	Temperature dependence of the Stranski-Krastanov layer thickness Surface Science Letters ·H.‐J. Gossmann, G. J. Fisanick	1991	1
18	Summary Abstract: Bridging the gap between solid–solid and solid–vacuum interfaces: A study of buried Si/αSi interfaces Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H.‐J. Gossmann, J. M. Gibson, J. C. Bean, R. T. Tung, L. C. Feldman	1987	1
19	Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling Physical Review Letters ·L. C. Feldman, J. Bevk, B. A. Davidson, H.‐J. Gossmann, J. P. Mannáerts	1987	50
20	7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain Physical Review Letters ·H.‐J. Gossmann, J. C. Bean, L. C. Feldman, E.G. McRae, Ian Robinson	1985	100

About H.‐J. Gossmann

H.‐J. Gossmann is a scholar working on Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Structural Biology, Electrical and Electronic Engineering and Computational Mechanics, having authored 127 papers that have together received 4.8k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (65 papers), Semiconductor materials and interfaces (59 papers), Semiconductor materials and devices (43 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Ion-surface interactions and analysis (28 papers), Electron and X-Ray Spectroscopy Techniques (21 papers), Surface and Thin Film Phenomena (17 papers) and Thin-Film Transistor Technologies (16 papers). The work is most often cited by research in Structural Biology (191 citations), Atomic and Molecular Physics, and Optics (2.3k citations), Surfaces, Coatings and Films (482 citations), Electrical and Electronic Engineering (3.7k citations) and Computational Mechanics (888 citations). H.‐J. Gossmann has collaborated with scholars based in United States, Germany and Spain. Frequent co-authors include D. J. Eaglesham, J. M. Poate, P.A. Stolk, D. C. Jacobson, T. E. Haynes, L. C. Feldman, C.S. Rafferty, George H. Gilmer, H. S. Luftman and M. Cerullo. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Physical Review Letters, Surface Science and Physical review. B, Condensed matter.

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