C.S. Rafferty

3.0k total citations · 1 hit paper
80 papers, 2.1k citations indexed

About

C.S. Rafferty is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, C.S. Rafferty has authored 80 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 15 papers in Computational Mechanics. Recurrent topics in C.S. Rafferty's work include Silicon and Solar Cell Technologies (46 papers), Semiconductor materials and devices (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). C.S. Rafferty is often cited by papers focused on Silicon and Solar Cell Technologies (46 papers), Semiconductor materials and devices (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). C.S. Rafferty collaborates with scholars based in United States, Spain and Japan. C.S. Rafferty's co-authors include George H. Gilmer, M. Jaraı́z, H.‐J. Gossmann, D. J. Eaglesham, J. M. Poate, H. S. Luftman, R.W. Dutton, Lourdes Pelaz, H.-J. Gossmann and D. C. Jacobson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C.S. Rafferty

73 papers receiving 1.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

1997 496 citations P.A. Stolk, H.‐J. Gossmann et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C.S. Rafferty United States	23	1.9k	901	513	303	124	80	2.1k
P. Fahey United States	9	1.5k 0.8×	935 1.0×	225 0.4×	407 1.3×	113 0.9×	13	1.6k
H.-J. Gossmann United States	17	1.3k 0.7×	639 0.7×	391 0.8×	239 0.8×	59 0.5×	45	1.4k
A. E. Michel United States	19	1.2k 0.6×	776 0.9×	281 0.5×	243 0.8×	56 0.5×	39	1.3k
K.K. Bourdelle France	22	1.7k 0.9×	307 0.3×	166 0.3×	336 1.1×	523 4.2×	120	1.9k
D.P. Brunco Belgium	28	1.4k 0.7×	376 0.4×	147 0.3×	583 1.9×	300 2.4×	77	1.8k
G. Ferla Italy	18	603 0.3×	211 0.2×	223 0.4×	141 0.5×	100 0.8×	73	789
M. Bruel France	21	2.3k 1.2×	463 0.5×	393 0.8×	559 1.8×	378 3.0×	60	2.5k
J.H. Comfort United States	22	1.8k 0.9×	537 0.6×	85 0.2×	295 1.0×	218 1.8×	62	1.8k
A. D. Kurtz United States	19	1.1k 0.5×	289 0.3×	89 0.2×	523 1.7×	344 2.8×	42	1.3k
J.C.S. Woo United States	28	2.5k 1.3×	717 0.8×	48 0.1×	401 1.3×	314 2.5×	112	2.6k

Countries citing papers authored by C.S. Rafferty

Since Specialization

Citations

This map shows the geographic impact of C.S. Rafferty's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.S. Rafferty with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.S. Rafferty more than expected).

Fields of papers citing papers by C.S. Rafferty

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.S. Rafferty. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.S. Rafferty. The network helps show where C.S. Rafferty may publish in the future.

Co-authorship network of co-authors of C.S. Rafferty

This figure shows the co-authorship network connecting the top 25 collaborators of C.S. Rafferty. A scholar is included among the top collaborators of C.S. Rafferty based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.S. Rafferty. C.S. Rafferty is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Rafferty, C.S., Olivier Cornu, Thomas Kirchgesner, et al.. (2024). Vascular study of decellularized porcine long bones: Characterization of a tissue engineering model. Bone. 182. 117073–117073. 3 indexed citations

2.

Rafferty, C.S., et al.. (2023). Decellularization of Massive Bone Allografts By Perfusion: A New Protocol for Tissue Engineering. Tissue Engineering Part A. 30(1-2). 31–44. 9 indexed citations

3.

Callahan, John J., et al.. (2011). Low-cost/high-efficiency lasers for medical applications in the 14XX-nm regime. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7883. 78830O–78830O. 1 indexed citations

4.

Hane, M., et al.. (2005). Boron diffusion model refinement and its effect on the calculation of reverse short channel effect. 30. 15–16. 1 indexed citations

5.

Kalyanaraman, R., V. C. Venezia, Lourdes Pelaz, et al.. (2003). Enhanced low temperature electrical activation of B in Si. Applied Physics Letters. 82(2). 215–217. 15 indexed citations

6.

Vuong, H.-H., C.S. Rafferty, W Mansfield, et al.. (2002). Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors. 311. 807–810. 3 indexed citations

7.

Kamgar, Avid, et al.. (2002). Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion. 695–698. 8 indexed citations

8.

Rafferty, C.S.. (2002). Progress in predicting transient diffusion. 48. 1–4. 1 indexed citations

9.

Griffin, Peter B. & C.S. Rafferty. (2002). A viscous nitride model for nitride/oxide isolation structures. 695. 741–744. 2 indexed citations

10.

Ng, K.K., et al.. (2001). Effective on-current of MOSFETs for large-signal speed consideration. 85. 31.5.1–31.5.4. 7 indexed citations

11.

Benton, J. L., T. Boone, D. C. Jacobson, & C.S. Rafferty. (2000). Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si. Applied Physics Letters. 77(24). 4010–4012. 1 indexed citations

12.

Pelaz, Lourdes, George H. Gilmer, M. Jaraı́z, et al.. (1997). Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon. MRS Proceedings. 469. 4 indexed citations

13.

Rafferty, C.S., George H. Gilmer, M. Jaraı́z, D. J. Eaglesham, & H.‐J. Gossmann. (1996). Simulation of cluster evaporation and transient enhanced diffusion in silicon. Applied Physics Letters. 68(17). 2395–2397. 120 indexed citations

14.

Gossmann, H.‐J., C.S. Rafferty, P.A. Stolk, et al.. (1995). Properties of Point-Defects in Si for Process Modeling. MRS Proceedings. 389. 3 indexed citations

15.

Rafferty, C.S.. (1994). Physical modeling of silicon thermal processing. European Solid-State Device Research Conference. 11–18. 1 indexed citations

16.

Lifshitz, N., Serge Luryi, M.R. Pinto, & C.S. Rafferty. (1993). Active-gate thin-film transistor. IEEE Electron Device Letters. 14(8). 394–395. 12 indexed citations

17.

Bokor, Jeffrey, et al.. (1992). Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal. IEEE Electron Device Letters. 13(10). 507–509. 10 indexed citations

18.

Rafferty, C.S. & R.W. Dutton. (1989). Plastic analysis of cylinder oxidation. Applied Physics Letters. 54(18). 1815–1817. 23 indexed citations

19.

Law, Mark E., C.S. Rafferty, & R.W. Dutton. (1986). New n-well fabrication techniques based on 2D process simulation. 518–521. 11 indexed citations

20.

Sangiorgi, E., S. Swirhun, M.R. Pinto, et al.. (1984). IIB-8 high-performance latchup-free CMOS. IEEE Transactions on Electron Devices. 31(12). 1967–1967. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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