H. S. Luftman

3.3k total citations · 1 hit paper
99 papers, 2.6k citations indexed

About

H. S. Luftman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. S. Luftman has authored 99 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 60 papers in Atomic and Molecular Physics, and Optics and 28 papers in Materials Chemistry. Recurrent topics in H. S. Luftman's work include Semiconductor materials and devices (41 papers), Semiconductor materials and interfaces (36 papers) and Silicon and Solar Cell Technologies (31 papers). H. S. Luftman is often cited by papers focused on Semiconductor materials and devices (41 papers), Semiconductor materials and interfaces (36 papers) and Silicon and Solar Cell Technologies (31 papers). H. S. Luftman collaborates with scholars based in United States, Germany and France. H. S. Luftman's co-authors include J. M. Poate, H.‐J. Gossmann, D. C. Jacobson, John White, D. J. Eaglesham, C.S. Rafferty, P.A. Stolk, George H. Gilmer, F. C. Unterwald and T. E. Haynes and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

H. S. Luftman

92 papers receiving 2.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

1997 496 citations H.‐J. Gossmann, D. C. Jacobson et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. S. Luftman United States	26	1.9k	1.4k	711	395	147	99	2.6k
W. Schröter Germany	30	2.8k 1.5×	1.9k 1.4×	1.2k 1.7×	283 0.7×	100 0.7×	127	3.4k
M.L. Thèye France	22	1.3k 0.7×	581 0.4×	1.3k 1.9×	259 0.7×	185 1.3×	104	2.1k
T. E. Haynes United States	34	2.9k 1.5×	1.1k 0.8×	1.0k 1.4×	894 2.3×	49 0.3×	116	3.6k
A. Armigliato Italy	23	1.2k 0.7×	737 0.5×	538 0.8×	215 0.5×	188 1.3×	129	1.7k
D. Brasen United States	27	1.8k 1.0×	832 0.6×	914 1.3×	162 0.4×	103 0.7×	84	2.5k
Bert Brijs Belgium	25	2.0k 1.0×	648 0.5×	984 1.4×	268 0.7×	79 0.5×	118	2.4k
F.D. Auret South Africa	31	3.0k 1.6×	1.7k 1.2×	1.5k 2.1×	271 0.7×	126 0.9×	285	4.0k
J. Cousty France	26	680 0.4×	931 0.7×	777 1.1×	251 0.6×	143 1.0×	64	1.8k
M. Erman France	21	1.0k 0.5×	806 0.6×	529 0.7×	210 0.5×	141 1.0×	63	1.6k
Marjorie A. Olmstead United States	25	1.2k 0.6×	1.3k 0.9×	981 1.4×	167 0.4×	501 3.4×	71	2.4k

Countries citing papers authored by H. S. Luftman

Since Specialization

Citations

This map shows the geographic impact of H. S. Luftman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. S. Luftman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. S. Luftman more than expected).

Fields of papers citing papers by H. S. Luftman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. S. Luftman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. S. Luftman. The network helps show where H. S. Luftman may publish in the future.

Co-authorship network of co-authors of H. S. Luftman

This figure shows the co-authorship network connecting the top 25 collaborators of H. S. Luftman. A scholar is included among the top collaborators of H. S. Luftman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. S. Luftman. H. S. Luftman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Golovchak, R., et al.. (2021). The Structure of GaSbSe Glasses by High‐Resolution X‐Ray Photoelectron Spectroscopy. physica status solidi (b). 258(6). 3 indexed citations

Luftman, H. S., et al.. (2008). Validation Study for the Use of Chlorine Dioxide Gas as a Decontaminant for Biological Safety Cabinets. Applied Biosafety. 13(4). 199–212. 16 indexed citations

Luftman, H. S., et al.. (2008). B. Atrophaeus and G. Stearothermophilus Biological Indicators for Chlorine Dioxide Gas Decontamination. Applied Biosafety. 13(3). 143–157. 9 indexed citations

Luftman, H. S., et al.. (2006). Chlorine Dioxide Gas Decontamination of Large Animal Hospital Intensive and Neonatal Care Units. Applied Biosafety. 11(3). 144–154. 23 indexed citations

Luftman, H. S.. (2005). Neutralization of Formaldehyde Gas by Ammonium Bicarbonate and Ammonium Carbonate. Applied Biosafety. 10(2). 101–106. 22 indexed citations

Vuong, H.-H., C.S. Rafferty, W Mansfield, et al.. (2002). Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors. 311. 807–810. 3 indexed citations

Herner, S. B., K. S. Jones, H.‐J. Gossmann, et al.. (1997). Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film. Journal of Applied Physics. 82(2). 583–588. 3 indexed citations

King, C. A., et al.. (1996). In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors. Applied Physics Letters. 68(2). 226–228. 2 indexed citations

Mannáerts, J. P., et al.. (1994). Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(2). 1038–1042.

10.

Fitzgerald, Eugene A., H.‐J. Gossmann, F. C. Unterwald, H. S. Luftman, & D. Monroe. (1994). Electron-beam induced current determination of shallow junction depth. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(1). 357–361. 7 indexed citations

11.

Schubert, E. F., L. N. Pfeiffer, K. W. West, H. S. Luftman, & G. J. Zydzik. (1994). Si δ-doping of 〈011〉-oriented GaAs and AlxGa1−xAs grown by molecular-beam epitaxy. Applied Physics Letters. 64(17). 2238–2240. 13 indexed citations

12.

Bokor, Jeffrey, et al.. (1992). Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal. IEEE Electron Device Letters. 13(10). 507–509. 10 indexed citations

13.

Watts, R. K., H. S. Luftman, & F. A. Baiocchi. (1992). Shallow junctions for 0.1 μm n-type metal–oxide semiconductor devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 515–523. 2 indexed citations

14.

Tokumitsu, Eisuke, T. H. Chiu, H. S. Luftman, & Nguyễn Thị Thanh Hà. (1991). Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy. Journal of Applied Physics. 69(12). 8426–8428. 2 indexed citations

15.

Panish, M. B., R. A. Hamm, D. Ritter, H. S. Luftman, & C. M. Cotell. (1991). Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy. Journal of Crystal Growth. 112(2-3). 343–353. 28 indexed citations

16.

Schubert, E. F., J. M. Kuo, R. F. Kopf, et al.. (1990). Beryllium δ doping of GaAs grown by molecular beam epitaxy. Journal of Applied Physics. 67(4). 1969–1979. 103 indexed citations

17.

Pinzone, C. J., et al.. (1989). Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition. MRS Proceedings. 163. 2 indexed citations

18.

Gross, M. E., et al.. (1988). Organometallic chemical vapor deposition of cobalt and formation of cobalt disilicide. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(5). 1548–1552. 45 indexed citations

19.

Mullins, David R., John White, & H. S. Luftman. (1985). Potassium on Ni(100) probed by photoemission of coadsorbed xenon. Surface Science. 160(1). 70–74. 9 indexed citations

20.

Luftman, H. S., Yang Sun, & John White. (1984). Coadsorption of CO and K on Ni(100) II. XPS, UPS, Δφ and ELS studies. Surface Science Letters. 141(1). A193–A193. 1 indexed citations

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