F. B. McLean

5.4k total citations · 2 hit papers
60 papers, 4.3k citations indexed

About

F. B. McLean is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. B. McLean has authored 60 papers receiving a total of 4.3k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. B. McLean's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F. B. McLean is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Silicon Carbide Semiconductor Technologies (15 papers). F. B. McLean collaborates with scholars based in United States and United Kingdom. F. B. McLean's co-authors include Timothy R. Oldham, H. E. Boesch, J.M. McGarrity, Aivars J. Lelis, J.M. Benedetto, G. A. Ausman, P.S. Winokur, Daniel B. Habersat, Neil Goldsman and J.P. Mize and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

F. B. McLean

60 papers receiving 4.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Total ionizing dose effects in MOS oxides and devices

2003 669 citations Timothy R. Oldham, F. B. McLean IEEE Transactions on Nuclear Science profile →
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

1980 498 citations F. B. McLean IEEE Transactions on Nuclear Science profile →

Peers

Countries citing papers authored by F. B. McLean

Since Specialization

Citations

This map shows the geographic impact of F. B. McLean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. B. McLean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. B. McLean more than expected).

Fields of papers citing papers by F. B. McLean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. B. McLean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. B. McLean. The network helps show where F. B. McLean may publish in the future.

Co-authorship network of co-authors of F. B. McLean

This figure shows the co-authorship network connecting the top 25 collaborators of F. B. McLean. A scholar is included among the top collaborators of F. B. McLean based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. B. McLean. F. B. McLean is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping 2008 ·Materials science forum ·Daniel B. Habersat, Aivars J. Lelis, J.M. McGarrity, F. B. McLean, Siddharth Potbhare	18
2	Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs 2006 ·Materials science forum ·Aivars J. Lelis, Daniel B. Habersat, Gabriel P. López, J.M. McGarrity, F. B. McLean, Neil Goldsman	45
3	Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C 2000 ·Materials science forum ·Aivars J. Lelis, Charles Scozzie, F. B. McLean, Bruce Geil, R. D. Vispute, T. Venkatesan	2
4	Mobility in 6H-SiC n-Channel MOSFETs 2000 ·Materials science forum ·Charles Scozzie, Aivars J. Lelis, F. B. McLean	4
5	Analysis of neutron damage in high-temperature silicon carbide JFETs 1994 ·IEEE Transactions on Nuclear Science ·F. B. McLean, J.M. McGarrity, Charles Scozzie, C. W. Tipton, (unknown)	29
6	High temperature stressing of SiC JFETs at 300/spl deg/C 1994 ·Charles Scozzie, C. W. Tipton, (unknown), J.M. McGarrity, F. B. McLean	7
7	Neutron irradiation effects on PZT thin films for nonvolatile-memory applications 1991 ·IEEE Transactions on Nuclear Science ·(unknown), J.M. Benedetto, J.M. McGarrity, F. B. McLean	37
8	Hardening Semiconductor Components Against Radiation and Temperature 1991 ·W. R. Dawes, (unknown), F. B. McLean, (unknown)	13
9	An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures 1989 ·Final Report ·Timothy R. Oldham, F. B. McLean, H. E. Boesch, J.M. McGarrity	2
10	Generic impulse response function for MOS systems and its application to linear response analysis 1988 ·IEEE Transactions on Nuclear Science ·F. B. McLean	39
11	Reversibility of trapped hole annealing 1988 ·IEEE Transactions on Nuclear Science ·Aivars J. Lelis, H. E. Boesch, Timothy R. Oldham, F. B. McLean	163
12	Basic mechanisms of radiation effects in electronic materials and devices. Final report, September 1986-September 1987 1987 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·F. B. McLean, Timothy R. Oldham	8
13	Hole Transport and Trapping in Field Oxides 1985 ·IEEE Transactions on Nuclear Science ·H. E. Boesch, F. B. McLean	74
14	Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon 1983 ·IEEE Transactions on Nuclear Science ·Timothy R. Oldham, F. B. McLean	60
15	VA-8 simple plasma wire model of charge funneling 1982 ·IEEE Transactions on Electron Devices ·F. B. McLean	1
16	Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors 1978 ·IEEE Transactions on Nuclear Science ·H. E. Boesch, F. B. McLean, J.M. McGarrity, P.S. Winokur	41
17	Simple approximate solutions to continuous-time random-walk transport 1977 ·Physical review. B, Solid state ·F. B. McLean, G. A. Ausman	61
18	Application of stochastic hopping transport to hole conduction in amorphous SiO2 1976 ·Journal of Applied Physics ·F. B. McLean, G. A. Ausman, H. E. Boesch, J.M. McGarrity	47
19	Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors 1975 ·IEEE Transactions on Nuclear Science ·H. E. Boesch, F. B. McLean, J.M. McGarrity, G. A. Ausman	76
20	One-Dimensional Thermoelastic Response of Solids to Pulsed Energy Deposition 1971 ·Journal of Applied Physics ·(unknown), F. B. McLean, (unknown), (unknown)	28

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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