T. E. Haynes

4.3k citations

116 papers · 3.6k indexed · 1 hit paper · h-index 34

Polymers and Plastics top 2%
- Transition Metal Oxide Nanomaterials 12
Electrical and Electronic Engineering top 1%
- Silicon and Solar Cell Technologies 61
- Integrated Circuits and Semiconductor Failure Analysis 42
- Semiconductor materials and devices 24
- Thin-Film Transistor Technologies 14
Computational Mechanics top 1%
- Ion-surface interactions and analysis 42
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces 41
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry
- ZnO doping and properties 11

Co-authors: D. J. Eaglesham L. A. Boatner Richard F. Haglund L. C. Feldman René López H.‐J. Gossmann D. C. Jacobson O. W. Holland
Cited by: Polymers and Plastics Electrical and Electronic Engineering Computational Mechanics
Journals: Applied Physics Letters (35 papers)Journal of Applied Physics (17 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (11 papers)
Partner nations: United States Japan Croatia

In The Last Decade

T. E. Haynes

108 papers receiving 3.5k citations

Hit Papers

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Peers

Countries citing papers authored by T. E. Haynes

Since Specialization

Citations

This map shows the geographic impact of T. E. Haynes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. Haynes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. Haynes more than expected).

Fields of papers citing papers by T. E. Haynes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. Haynes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. Haynes. The network helps show where T. E. Haynes may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. E. Haynes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. E. Haynes Line = papers co-authored together T. E. Haynes links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Method of forming electrical pathways in indium-tin-oxide coatings OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·T. E. Haynes	2023	0
2	Enhanced low temperature electrical activation of B in Si Applied Physics Letters ·R. Kalyanaraman,V. C. Venezia,Lourdes Pelaz,T. E. Haynes,H.‐J. Gossmann,C.S. Rafferty	2003	15
3	High Temperature Magnetic Properties of FePt Nanoparticles Formed by Ion Implantation APS ·K. D. Sorge,J. R. Thompson,A. Meldrum,T. E. Haynes,S. P. Withrow,J. D. Budai,C. W. White,L. A. Boatner	2002	0
4	Temperature-controlled surface plasmon resonance in VO_2 nanorods Optics Letters ·René López,T. E. Haynes,L. A. Boatner,L. C. Feldman,Richard F. Haglund	2002	81
5	On the role of magnetostatic interactions in assemblies of Fe nanoparticles APS ·T. C. Schulthess,M. Benakli,P. B. Visscher,K. D. Sorge,J. R. Thompson,F. A. Modine,T. E. Haynes,L. A. Boatner,G. M. Stocks,W. H. Butler	2001	0
6	The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon MRS Proceedings ·Kristen D. Herring,K. S. Jones,T. E. Haynes,Desi Suyamto,黄吉炜,E. Andideh	2001	0
7	A study of the Au/Ni ohmic contact on p-GaN Journal of Applied Physics ·D. Qiao,L. S. Yu,S. S. Lau,J. Y. Lin,H. X. Jiang,T. E. Haynes	2000	79
8	Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding Journal of Electronic Materials ·Yi Zheng,山下健一郎,James A. Crutchfield,S. S. Lau,David M. Hansen,T. F. Kuech,T. E. Haynes,Rene-Yvon Lefebvre D'Argence,M. Nastasi	2000	17
9	Deposition of Heteroepitaxial In_2O_3 Thin Films by Molecular Beam Epitaxy Christine Anna Langhorst,Samuel Liversidge,Yuzo Shigesato,Itaru Yasui,C. Ahrndt,T. E. Haynes	1998	0
10	Mechanism of Silicon Exfoliation by Hydrogen Implantation and He, Li and Si CO-implantation Repository of the University of Namur ·M. K. Weldon,Vittorio Marsico,Yves J. Chabal,Eun Hye Lee,Yves Caudano,S. B. Christman,E. E. Chaban,D. C. Jacobson,W. L. Brown,J. Sapjeta,C. M. Hsieh,Василькив Ирина Николаевна,Aditya Agarwal,V. C. Venezia,T. E. Haynes,W. B. Jackson	1997	0
11	Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy Journal of Electronic Materials ·Heeyoung Jung,C. R. Abernathy,V. Krishnamoorthy,Robert W. Gedridge,T. E. Haynes	1997	3
12	Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channeling Physical review. B, Condensed matter ·U.V. Desnica,Mohamad Abbasabadi,M. Ivanda,Kelsey Fahie,T. E. Haynes	1997	22
13	Transient enhanced diffusion of Sb and B due to MeV silicon implants Applied Physics Letters ·D. J. Eaglesham,T. E. Haynes,H.‐J. Gossmann,D. C. Jacobson,P.A. Stolk,J. M. Poate	1997	37
14	Morphology of the implantation induced disorder in GaAs Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·P McCallen,于国华,M. Ivanda,T. E. Haynes	1996	4
15	Donor generation from native defects induced by In+ implantation into tin-doped indium oxide Journal of Applied Physics ·T. E. Haynes,Yuzo Shigesato	1995	8
16	Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers MRS Proceedings ·Todd W. Simpson,David A. Love,D. Endisch,R. D. Goldberg,I. V. Mitchell,T. E. Haynes,J.‐M. Baribeau	1994	1
17	Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+ Applied Physics Letters ·T. E. Haynes,Александр Сергеевич Володченко,S. S. Lau	1994	27
18	Lattice damage in ion implanted silicon-germanium alloys Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·T. E. Haynes,O. W. Holland	1993	10
19	Optical functions of silicon-germanium alloys determined using spectroscopic ellipsometry Optical Materials ·G. E. Jellison,T. E. Haynes,K. Vanitha	1993	33
20	Ion beam deposition of β-SiC layers onto α-SiC substrates Vacuum ·S Pon Shreetha,Karren L. More,赵福海,T. E. Haynes	1989	12

About T. E. Haynes

T. E. Haynes is a scholar working on Computational Mechanics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Electronic, Optical and Magnetic Materials, having authored 116 papers that have together received 3.6k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (61 papers), Ion-surface interactions and analysis (42 papers), Integrated Circuits and Semiconductor Failure Analysis (42 papers), Semiconductor materials and interfaces (41 papers), Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (14 papers), Transition Metal Oxide Nanomaterials (12 papers) and ZnO doping and properties (11 papers). The work is most often cited by research in Polymers and Plastics (739 citations), Electrical and Electronic Engineering (2.9k citations), Computational Mechanics (894 citations), Atomic and Molecular Physics, and Optics (1.1k citations) and Electronic, Optical and Magnetic Materials (486 citations). T. E. Haynes has collaborated with scholars based in United States, Japan and Croatia. Frequent co-authors include D. J. Eaglesham, L. A. Boatner, Richard F. Haglund, L. C. Feldman, René López, H.‐J. Gossmann, D. C. Jacobson, O. W. Holland, J. M. Poate and P.A. Stolk. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Electronic Materials and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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