M. Denais

2.1k total citations · 2 hit papers
37 papers, 1.4k citations indexed

About

M. Denais is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Denais has authored 37 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Denais's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). M. Denais is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). M. Denais collaborates with scholars based in France, India and Switzerland. M. Denais's co-authors include V. Huard, C. Parthasarathy, G. Ribes, Emmanuel Vincent, S. Bruyère, G. Ghibaudo, F. Monsieur, A. Bravaix, Jérôme Mitard and F. Perrier and has published in prestigious journals such as Journal of Medical Internet Research, Microelectronics Reliability and Microelectronic Engineering.

In The Last Decade

M. Denais

36 papers receiving 1.3k citations

Hit Papers

Review on high-k dielectr... 2005 2026 2012 2019 2005 2005 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Review on high-k dielectrics reliability issues
    2005 416 citations G. Ribes, Jérôme Mitard et al. IEEE Transactions on Device and Materials Reliability profile →
  2. NBTI degradation: From physical mechanisms to modelling
    2005 393 citations V. Huard, M. Denais et al. Microelectronics Reliability profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
M. Denais 1.4k 148 70 40 38 37 1.4k
T. Nigam 1.3k 1.0× 191 1.3× 80 1.1× 36 0.9× 85 2.2× 58 1.4k
G. Ribes 924 0.7× 121 0.8× 54 0.8× 22 0.6× 55 1.4× 49 940
M. Aoulaiche 1.3k 1.0× 135 0.9× 89 1.3× 20 0.5× 32 0.8× 145 1.4k
Ben Kaczer 913 0.7× 102 0.7× 53 0.8× 33 0.8× 37 1.0× 25 938
M.F. Li 598 0.4× 110 0.7× 69 1.0× 25 0.6× 29 0.8× 20 612
J.-L. Ogier 720 0.5× 171 1.2× 54 0.8× 22 0.6× 86 2.3× 29 749
F. Monsieur 906 0.7× 113 0.8× 67 1.0× 16 0.4× 51 1.3× 56 936
R.‐P. Vollertsen 804 0.6× 117 0.8× 32 0.5× 52 1.3× 102 2.7× 52 839
C. Jahan 687 0.5× 151 1.0× 49 0.7× 84 2.1× 20 0.5× 41 728
T. Chiarella 1.3k 0.9× 147 1.0× 174 2.5× 26 0.7× 25 0.7× 109 1.3k

Countries citing papers authored by M. Denais

Since Specialization
Citations

This map shows the geographic impact of M. Denais's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Denais with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Denais more than expected).

Fields of papers citing papers by M. Denais

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Denais. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Denais. The network helps show where M. Denais may publish in the future.

Co-authorship network of co-authors of M. Denais

This figure shows the co-authorship network connecting the top 25 collaborators of M. Denais. A scholar is included among the top collaborators of M. Denais based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Denais. M. Denais is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Denais, M., et al.. (2024). Automated Speech Analysis for Risk Detection of Depression, Anxiety, Insomnia, and Fatigue: Algorithm Development and Validation Study. Journal of Medical Internet Research. 26. e58572–e58572. 4 indexed citations
2.
Denais, M., V. Huard, C. Guérin, et al.. (2007). Unified Perspective of NBTI and Hot-Carrier Degradation in CMOS using on-the-Fly Bias Patterns. 696–697. 5 indexed citations
3.
Huard, V., C. Parthasarathy, & M. Denais. (2006). Single-Hole Detrapping Events in PMOSFETS NBTI Degradation. 5–9. 13 indexed citations
4.
Denais, M., A. Bravaix, V. Huard, et al.. (2006). Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies. 735–736. 22 indexed citations
5.
Guérin, C., et al.. (2006). Combined effect of NBTI and Channel Hot Carrier effects in pMOSFETs. 10–16. 11 indexed citations
6.
Ribes, G., S. Bruyère, D. Roy, et al.. (2006). Physical Origin of Vt Instabilities in High-K Dielectrics and Process Optimisation. irw 2003. 75–78. 3 indexed citations
7.
Denais, M., V. Huard, G. Ribes, et al.. (2005). New perspectives on NBTI in advanced technologies: modelling & characterization. 399–402. 15 indexed citations
8.
Denais, M., A. Bravaix, V. Huard, et al.. (2005). New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing. 24. 121–124. 7 indexed citations
9.
Ribes, G., S. Bruyère, M. Denais, D. Roy, & G. Ghibaudo. (2005). MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown. 377–380. 7 indexed citations
10.
Ribes, G., S. Bruyère, M. Denais, D. Roy, & G. Ghibaudo. (2005). Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-K dielectrics). 1–3. 9 indexed citations
11.
Bruyère, S., et al.. (2005). High-K dielectrics breakdown accurate lifetme assessment methodology. 61–66. 11 indexed citations
12.
Bravaix, A., D. Goguenheim, M. Denais, et al.. (2005). Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectronics Reliability. 45(9-11). 1370–1375. 9 indexed citations
13.
Denais, M., V. Huard, C. Parthasarathy, et al.. (2005). Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS. 109–112. 6 indexed citations
14.
Ribes, G., Jérôme Mitard, M. Denais, et al.. (2005). Review on high-k dielectrics reliability issues. IEEE Transactions on Device and Materials Reliability. 5(1). 5–19. 416 indexed citations breakdown →
15.
Ribes, G., S. Bruyère, M. Denais, et al.. (2004). Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study. Microelectronic Engineering. 72(1-4). 10–15. 4 indexed citations
16.
Denais, M., V. Huard, C. Parthasarathy, et al.. (2004). Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide. 1–6. 9 indexed citations
17.
Denais, M., V. Huard, C. Parthasarathy, et al.. (2004). New methodologies of NBTI characterization eliminating recovery effects. 265–268. 10 indexed citations
18.
19.
Huard, V., M. Denais, F. Perrier, et al.. (2004). A thorough investigation of MOSFETs NBTI degradation. Microelectronics Reliability. 45(1). 83–98. 101 indexed citations
20.
Ribes, G., Markus Müller, S. Bruyère, et al.. (2004). Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques [CMOS device applications]. 89–92. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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