S. Solmi

4.2k total citations · 1 hit paper
137 papers, 3.3k citations indexed

About

S. Solmi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Solmi has authored 137 papers receiving a total of 3.3k indexed citations (citations by other indexed papers that have themselves been cited), including 133 papers in Electrical and Electronic Engineering, 75 papers in Atomic and Molecular Physics, and Optics and 40 papers in Materials Chemistry. Recurrent topics in S. Solmi's work include Silicon and Solar Cell Technologies (107 papers), Semiconductor materials and interfaces (74 papers) and Semiconductor materials and devices (48 papers). S. Solmi is often cited by papers focused on Silicon and Solar Cell Technologies (107 papers), Semiconductor materials and interfaces (74 papers) and Semiconductor materials and devices (48 papers). S. Solmi collaborates with scholars based in Italy, Germany and Belgium. S. Solmi's co-authors include G. Masetti, M. Severi, D. Nobili, A. Armigliato, Elena Landi, Fabio Baruffaldi, P. Negrini, M. Servidori, R. Angelucci and R. Canteri and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Solmi

132 papers receiving 2.9k citations

Hit Papers

Modeling of carrier mobility against carrier concentratio... 1983 2026 1997 2011 1983 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
    1983 747 citations S. Solmi et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Solmi Italy 29 3.0k 1.5k 870 433 310 137 3.3k
Jan Vanhellemont Belgium 29 3.0k 1.0× 1.5k 1.0× 1.2k 1.4× 401 0.9× 426 1.4× 305 3.5k
F. Cristiano France 26 2.2k 0.7× 999 0.6× 713 0.8× 590 1.4× 353 1.1× 193 2.5k
B. E. Weir United States 30 3.1k 1.0× 1.6k 1.0× 776 0.9× 149 0.3× 522 1.7× 96 3.6k
H. Kibbel Germany 30 2.3k 0.8× 1.8k 1.2× 1.2k 1.4× 212 0.5× 467 1.5× 158 2.9k
Jens W. Tomm Germany 26 2.1k 0.7× 1.7k 1.1× 858 1.0× 313 0.7× 281 0.9× 277 2.7k
Masashi Uematsu Japan 24 1.6k 0.5× 743 0.5× 841 1.0× 238 0.5× 268 0.9× 130 1.9k
H. L. Hartnagel Germany 16 1.1k 0.4× 411 0.3× 571 0.7× 635 1.5× 228 0.7× 103 1.5k
D. Bensahel France 27 1.9k 0.6× 1.1k 0.7× 1.1k 1.2× 156 0.4× 508 1.6× 142 2.3k
R. A. Hamm United States 34 2.8k 0.9× 2.4k 1.5× 544 0.6× 162 0.4× 370 1.2× 167 3.3k
P. M. Amirtharaj United States 16 1.0k 0.3× 561 0.4× 681 0.8× 137 0.3× 231 0.7× 48 1.3k

Countries citing papers authored by S. Solmi

Since Specialization
Citations

This map shows the geographic impact of S. Solmi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Solmi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Solmi more than expected).

Fields of papers citing papers by S. Solmi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Solmi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Solmi. The network helps show where S. Solmi may publish in the future.

Co-authorship network of co-authors of S. Solmi

This figure shows the co-authorship network connecting the top 25 collaborators of S. Solmi. A scholar is included among the top collaborators of S. Solmi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Solmi. S. Solmi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ferri, M., F. Moscatelli, F. Mancarella, et al.. (2014). Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires. Journal of Electronic Materials. 44(1). 371–376. 3 indexed citations
2.
Cerofolini, G. F., et al.. (2010). Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires. Semiconductor Science and Technology. 25(9). 95011–95011. 10 indexed citations
3.
Pintilie, Ioana, Cristian M. Teodorescu, F. Moscatelli, et al.. (2010). Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation. Journal of Applied Physics. 108(2). 28 indexed citations
4.
Parisini, A., Vittorio Morandi, S. Solmi, et al.. (2008). Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy. Applied Physics Letters. 92(26). 14 indexed citations
5.
Hijikata, Yasuto, Sadafumi Yoshida, F. Moscatelli, et al.. (2007). Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation. Materials science forum. 556-557. 651–654. 3 indexed citations
6.
Ferri, M., S. Solmi, A. Armigliato, et al.. (2004). Damage and recovery in doped SOI layers after high energy implantation. Materials Science and Engineering B. 114-115. 20–24. 1 indexed citations
7.
Poggi, Antonella, Roberta Nipoti, S. Solmi, Mario Barozzi, & L. Vanzetti. (2004). Low temperature oxidation of SiC preamorphized by ion implantation. Journal of Applied Physics. 95(11). 6119–6123. 13 indexed citations
8.
Nobili, D., et al.. (2004). Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation. Journal of Applied Physics. 95(11). 6092–6097. 4 indexed citations
9.
Solmi, S., A. Parisini, M. Bersani, et al.. (2002). Investigation on indium diffusion in silicon. Journal of Applied Physics. 92(3). 1361–1366. 40 indexed citations
10.
Solmi, S., et al.. (2000). Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon. Journal of Applied Physics. 88(8). 4547–4552. 15 indexed citations
11.
Solmi, S., et al.. (1995). Codiffusion of arsenic and boron implanted in silicon. Journal of Applied Physics. 77(6). 2400–2406. 18 indexed citations
12.
Fabbri, Rita, et al.. (1991). Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers. Applied Physics A. 53(3). 222–226. 1 indexed citations
13.
Angelucci, R., et al.. (1989). As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation. MRS Proceedings. 157. 1 indexed citations
14.
Solmi, S., F. Cembali, Rita Fabbri, M. Servidori, & R. Canteri. (1989). Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation. Applied Physics A. 48(3). 255–260. 23 indexed citations
15.
Angelucci, R., A. Armigliato, Elena Landi, D. Nobili, & S. Solmi. (1987). Equilibrium Solubility of Arsenic and Antimony in Silicon. European Solid-State Device Research Conference. 461–464. 1 indexed citations
16.
Landi, Elena & S. Solmi. (1986). Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon. Solid-State Electronics. 29(11). 1181–1187. 24 indexed citations
17.
Angelucci, R., et al.. (1986). Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon. MRS Proceedings. 74. 6 indexed citations
18.
Solmi, S., Elena Landi, & P. Negrini. (1984). Effect of the annealing conditions on the electrical characteristics of p+/n shallow junctions. IEEE Electron Device Letters. 5(9). 359–361. 15 indexed citations
19.
Ostoja, P., S. Guerri, P. Negrini, & S. Solmi. (1984). The effects of phosphorus precipitation on the open-circuit voltage in N+/P silicon solar cells. Solar Cells. 11(1). 1–12. 27 indexed citations
20.
Negrini, P., D. Nobili, & S. Solmi. (1975). Kinetics of Phosphorus Predeposition in Silicon Using POCl3. Journal of The Electrochemical Society. 122(9). 1254–1260. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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