N. E. B. Cowern

1.9k total citations
75 papers, 1.5k citations indexed

About

N. E. B. Cowern is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, N. E. B. Cowern has authored 75 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 40 papers in Atomic and Molecular Physics, and Optics and 10 papers in Computational Mechanics. Recurrent topics in N. E. B. Cowern's work include Silicon and Solar Cell Technologies (66 papers), Semiconductor materials and interfaces (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). N. E. B. Cowern is often cited by papers focused on Silicon and Solar Cell Technologies (66 papers), Semiconductor materials and interfaces (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). N. E. B. Cowern collaborates with scholars based in United Kingdom, Netherlands and Belgium. N. E. B. Cowern's co-authors include F. Cristiano, G. F. A. van de Walle, A. Claverie, P.A. Stolk, H.G.A. Huizing, K.T.F. Janssen, Nick S. Bennett, Giovanni Mannino, F. Roozeboom and J. G. M. van Berkum and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. E. B. Cowern

73 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. E. B. Cowern United Kingdom 19 1.4k 813 331 301 117 75 1.5k
H.-J. Gossmann United States 17 1.3k 0.9× 639 0.8× 239 0.7× 391 1.3× 59 0.5× 45 1.4k
C. A. King United States 15 901 0.6× 585 0.7× 290 0.9× 59 0.2× 109 0.9× 54 1.0k
U. G�sele United States 11 791 0.6× 404 0.5× 371 1.1× 59 0.2× 137 1.2× 16 911
S. Kerdilès France 14 707 0.5× 320 0.4× 283 0.9× 75 0.2× 115 1.0× 77 795
Teh Y. Tan United States 11 501 0.4× 254 0.3× 195 0.6× 162 0.5× 163 1.4× 28 629
L. C. Kimerling United States 16 1.1k 0.7× 556 0.7× 345 1.0× 114 0.4× 151 1.3× 47 1.2k
J. Lundsgaard Hansen Denmark 17 638 0.4× 377 0.5× 343 1.0× 93 0.3× 169 1.4× 51 831
S. Yu. Shiryaev Denmark 13 475 0.3× 429 0.5× 219 0.7× 108 0.4× 115 1.0× 41 633
K. Graff Germany 11 948 0.7× 533 0.7× 218 0.7× 102 0.3× 61 0.5× 20 1.0k
C. Dubois France 15 536 0.4× 261 0.3× 251 0.8× 96 0.3× 89 0.8× 57 711

Countries citing papers authored by N. E. B. Cowern

Since Specialization
Citations

This map shows the geographic impact of N. E. B. Cowern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. E. B. Cowern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. E. B. Cowern more than expected).

Fields of papers citing papers by N. E. B. Cowern

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. E. B. Cowern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. E. B. Cowern. The network helps show where N. E. B. Cowern may publish in the future.

Co-authorship network of co-authors of N. E. B. Cowern

This figure shows the co-authorship network connecting the top 25 collaborators of N. E. B. Cowern. A scholar is included among the top collaborators of N. E. B. Cowern based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. E. B. Cowern. N. E. B. Cowern is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cowern, N. E. B.. (2018). Current rapid global temperature rise linked to falling SO<sub>2</sub> emissions. Biogeosciences (European Geosciences Union). 2 indexed citations
2.
Goss, Jonathan P., et al.. (2016). Interstitial Fe-pairs in silicon. Journal of Crystal Growth. 468. 54–56. 3 indexed citations
3.
Radhakrishnan, Hariharsudan Sivaramakrishnan, N. E. B. Cowern, Kris Van Nieuwenhuysen, et al.. (2013). Enhancement of gettering in epitaxial thin-film silicon solar cells by tuning the properties of porous silicon. 209. 58–62. 2 indexed citations
4.
Bennett, Nick S. & N. E. B. Cowern. (2012). Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique. Applied Physics Letters. 100(17). 10 indexed citations
5.
Radhakrishnan, Hariharsudan Sivaramakrishnan, Frédéric Dross, N. E. B. Cowern, et al.. (2012). Gettering of transition metals by porous silicon in epitaxial silicon solar cells. physica status solidi (a). 209(10). 1866–1871. 15 indexed citations
6.
Cowern, N. E. B., et al.. (2008). Thermal emissions and climate change: a nuclear problem and a photovoltaic solution?. arXiv (Cornell University). 1 indexed citations
7.
Bennett, Nick S., N. E. B. Cowern, S. Paul, et al.. (2008). Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon. View. 59. 290–293.
8.
Cowern, N. E. B.. (2007). Diffusion in a Single Crystal within a Stressed Environment. Physical Review Letters. 99(15). 155903–155903. 13 indexed citations
9.
Pawlak, Bartek, E. Augendre, S. Severi, et al.. (2006). The Carbon Co-implant with Spike RTA Solution for Boron Extension. MRS Proceedings. 912. 4 indexed citations
10.
Bennett, Nick S., N. E. B. Cowern, Andrew J. Smith, et al.. (2006). Highly conductive Sb-doped layers in strained Si. Applied Physics Letters. 89(18). 16 indexed citations
11.
Duffy, Ray, et al.. (2006). Suppression of phosphorus diffusion by carbon co-implantation. Applied Physics Letters. 89(6). 45 indexed citations
12.
Sheu, Yu‐Miin, Sally Liu, Ray Duffy, et al.. (2005). Boron diffusion in strained and strain-relaxed SiGe. Materials Science and Engineering B. 124-125. 39–44. 12 indexed citations
13.
Bennett, Nick S., Andrew J. Smith, B. Colombeau, et al.. (2005). Differential Hall profiling of ultra-shallow junctions in Si and SOI. Materials Science and Engineering B. 124-125. 305–309. 16 indexed citations
14.
Smith, A. J., B. Colombeau, R. Gwilliam, et al.. (2005). Suppression of boron interstitial clusters in SOI using vacancy engineering. Materials Science and Engineering B. 124-125. 210–214. 7 indexed citations
15.
Cowern, N. E. B., M. Jaraı́z, F. Cristiano, A. Claverie, & Giovanni Mannino. (2003). Fundamental diffusion issues for deep-submicron device processing. 333–336. 2 indexed citations
16.
Uppal, Suresh, A. F. W. Willoughby, J. M. Bonar, et al.. (2001). Diffusion of ion-implanted boron in germanium. Journal of Applied Physics. 90(8). 4293–4295. 91 indexed citations
17.
Mannino, Giovanni, P.A. Stolk, N. E. B. Cowern, et al.. (2001). Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon. Applied Physics Letters. 78(7). 889–891. 19 indexed citations
18.
Pichler, P., et al.. (2001). A reduced approach for modeling the influence of nanoclusters and {113} defects on transient enhanced diffusion. Applied Physics Letters. 79(16). 2654–2656. 12 indexed citations
19.
Cowern, N. E. B., K.T.F. Janssen, G. F. A. van de Walle, & D. J. Gravesteijn. (1990). Impurity diffusion via an intermediate species: The B-Si system. Physical Review Letters. 65(19). 2434–2437. 132 indexed citations
20.
Cowern, N. E. B., H.F.F. Jos, K.T.F. Janssen, & Arthur J. H. Wachters. (1989). Anomalous Transient Tail Diffusion of Boron in Silicon: Kinetic Modeling of Diffusion and Cluster Formation. MRS Proceedings. 163. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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