D. C. Jacobson

11.8k citations

228 papers · 9.5k indexed · 3 hit papers · h-index 45

Impact in

Computational Mechanics top 0.2%
- Ion-surface interactions and analysis
- Laser Material Processing Techniques
Electrical and Electronic Engineering top 0.2%
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Computational Mechanics 100
- Ion-surface interactions and analysis 94
Electrical and Electronic Engineering 183
- Silicon and Solar Cell Technologies 132
- Integrated Circuits and Semiconductor Failure Analysis 58
- Thin-Film Transistor Technologies 53
- Semiconductor materials and devices 40

Co-authors: J. M. Poate D. J. Eaglesham F. Spaepen E. P. Donovan Michael O. Thompson H.‐J. Gossmann T. E. Haynes Alice E. White
Journals: Applied Physics Letters (59 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (21 papers)Journal of Applied Physics (19 papers)Physical Review Letters (8 papers)Journal of The Electrochemical Society (5 papers)
Partner nations: United States Netherlands Germany

In The Last Decade

D. C. Jacobson

217 papers receiving 9.1k citations

Hit Papers

align trajectories log scale

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 · 496 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 Journal of Applied Physics
1993 Physical Review Letters
1984 Physical Review Letters

Peers

Countries citing papers authored by D. C. Jacobson

Since Specialization

Citations

This map shows the geographic impact of D. C. Jacobson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. C. Jacobson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. C. Jacobson more than expected).

Fields of papers citing papers by D. C. Jacobson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. C. Jacobson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. C. Jacobson. The network helps show where D. C. Jacobson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. C. Jacobson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. C. Jacobson Line = papers co-authored together D. C. Jacobson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Beam Line System for a Commercial Borohydride Ion Implanter AIP conference proceedings ·H.F. Glavish, Mukesh K Sarna, D. C. Jacobson, F. Sinclair, Suresh Babu, N. Nagai, Masayuki Naito	2006	1
2	Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors H.-H. Vuong, C.S. Rafferty, W Mansfield, H. S. Luftman, D. C. Jacobson, M.R. Pinto, Jea-Bum Park, H. Momm, William G. Ambrose	2002	3
3	Integrated planar waveguide amplifier with 15 dB net gain at 1550 nm Optics and Photonics News ·Nikolaos Roukounakis, A.J. Bruce, G. Lenz, Per Brinch Hansen, I. Samulewicz, Pan Shizhen, L. Martínez, Igal Brener, E.J. Laskowski, A. Paunescu, 重光相川, D. C. Jacobson, A. E. White	1999	1
4	Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model Journal of Applied Physics ·S. B. Herner, H.-J. Gossmann, Lourdes Pelaz, George H. Gilmer, M. Jaraı́z, D. C. Jacobson, D. J. Eaglesham	1998	13
5	Mechanism of Silicon Exfoliation by Hydrogen Implantation and He, Li and Si CO-implantation Repository of the University of Namur ·M. K. Weldon, Vittorio Marsico, Yves J. Chabal, Eun Hye Lee, Yves Caudano, S. B. Christman, E. E. Chaban, D. C. Jacobson, W. L. Brown, J. Sapjeta, C. M. Hsieh, Василькив Ирина Николаевна, Aditya Agarwal, V. C. Venezia, T. E. Haynes, W. B. Jackson	1997	0
6	Electron field emission from ion-implanted diamond Applied Physics Letters ·Wei Zhu, Greg Kochanski, Aurora Lutffeoneta, L. Seibles, D. C. Jacobson, M. McCormack, Alice E. White	1995	144
7	Fluorine-Enhanced Si:Er Light Emission MRS Proceedings ·Fang Ren, Jürgen Michel, D. C. Jacobson, J. M. Poate, Lionel C. Kimerling	1993	3
8	Mechanisms of ion-beam-enhanced diffusion in amorphous silicon Applied Physics A ·S. Coffa, D. C. Jacobson, J. M. Poate, F. Priolo	1992	8
9	Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks Applied Physics Letters ·R. Kalish, R. Łukasiak, K.-K. Law, J. L. Merz, L. C. Feldman, D. C. Jacobson, B. E. Weir	1992	5
10	Microstructure of erbium-implanted Si Applied Physics Letters ·D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, Albert Polman, Y. H. Xie, Lionel C. Kimerling	1991	130
11	Defect states of amorphous Si probed by the diffusion and solubility of Cu Applied Physics Letters ·Albert Polman, D. C. Jacobson, S. Coffa, J. M. Poate, S. Roorda, W.C. Sinke	1990	44
12	Radiation-enhanced diffusion of implanted impurities in amorphous Si Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Priolo, J. M. Poate, D. C. Jacobson, J. L. Batstone, S. U. Campisano	1989	7
13	Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si Physical Review Letters ·J. M. Poate, Jan Linnros, F. Priolo, D. C. Jacobson, J. L. Batstone, Michael O. Thompson	1988	37
14	A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·T. E. Seidel, Takele Belay, C. S. Pai, R. V. Knoell, D. M. Maher, D. C. Jacobson	1985	104
15	Pulsed Laser Melting of Graphite MRS Proceedings ·G. Braunstein, J. Steinbeck, M. S. Dresselhaus, G. Dresselhaus, B. S. Elman, T. Venkatesan, B. Wilkens, D. C. Jacobson	1985	1
16	Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation Journal of Applied Physics ·E. P. Donovan, F. Spaepen, David Turnbull, J. M. Poate, D. C. Jacobson	1985	356
17	Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation Physical Review Letters ·Michael O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, J. M. Poate, D. C. Jacobson, A.G. Cullis, N. G. Chew Hit paper breakdown →	1984	452
18	Surface Modification and Alloying: by Laser, Ion, and Electron Beams Medical Entomology and Zoology ·Holly Menino, J. M. Poate, Oreste Biancoli, D. C. Jacobson	1983	283
19	Epitaxial Silicides MRS Proceedings ·R. T. Tung, J. M. Poate, J. C. Bean, J. M. Gibson, D. C. Jacobson	1981	1
20	Laser irradiation of nickel single crystals Applied Physics Letters ·L. Buene, J. M. Poate, D. C. Jacobson, Clifton W. Draper, J. K. Hirvonen	1980	36

About D. C. Jacobson

D. C. Jacobson is a scholar working on Computational Mechanics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Ceramics and Composites and Materials Chemistry, having authored 228 papers that have together received 9.5k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (132 papers), Ion-surface interactions and analysis (94 papers), Semiconductor materials and interfaces (68 papers), Integrated Circuits and Semiconductor Failure Analysis (58 papers), Thin-Film Transistor Technologies (53 papers), Silicon Nanostructures and Photoluminescence (49 papers), Semiconductor materials and devices (40 papers) and Glass properties and applications (11 papers). The work is most often cited by research in Computational Mechanics (2.7k citations), Electrical and Electronic Engineering (6.8k citations), Atomic and Molecular Physics, and Optics (3.3k citations), Materials Chemistry (4.4k citations) and Ceramics and Composites (536 citations). D. C. Jacobson has collaborated with scholars based in United States, Netherlands and Germany. Frequent co-authors include J. M. Poate, D. J. Eaglesham, F. Spaepen, E. P. Donovan, Michael O. Thompson, H.‐J. Gossmann, T. E. Haynes, Alice E. White, J. M. Gibson and David Turnbull. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics, Physical Review Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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