B. E. Weir

4.8k total citations · 2 hit papers
96 papers, 3.6k citations indexed

About

B. E. Weir is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. E. Weir has authored 96 papers receiving a total of 3.6k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Electrical and Electronic Engineering, 41 papers in Atomic and Molecular Physics, and Optics and 22 papers in Materials Chemistry. Recurrent topics in B. E. Weir's work include Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor materials and interfaces (26 papers). B. E. Weir is often cited by papers focused on Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor materials and interfaces (26 papers). B. E. Weir collaborates with scholars based in United States, Germany and Canada. B. E. Weir's co-authors include P. J. Silvėrman, Eugene A. Fitzgerald, A. R. Kortan, Y. J. Mii, Y. H. Xie, D. Monroe, Md Ashraful Alam, L. C. Feldman, D. Brasen and Jürgen Michel and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

B. E. Weir

94 papers receiving 3.4k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

1991 563 citations Eugene A. Fitzgerald, D. Brasen et al. Applied Physics Letters profile →
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

1992 441 citations Eugene A. Fitzgerald, D. Monroe et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
B. E. Weir	3.1k	1.6k	776	522	154	96	3.6k
M. Cerullo	1.6k 0.5×	1.6k 1.0×	825 1.1×	408 0.8×	122 0.8×	26	2.4k
D. Bensahel	1.9k 0.6×	1.1k 0.7×	1.1k 1.4×	508 1.0×	68 0.4×	142	2.3k
Yukinori Morita	2.2k 0.7×	710 0.4×	736 0.9×	496 1.0×	145 0.9×	219	2.7k
Jan Vanhellemont	3.0k 0.9×	1.5k 0.9×	1.2k 1.5×	426 0.8×	99 0.6×	305	3.5k
M. Levy	2.3k 0.7×	2.0k 1.3×	527 0.7×	594 1.1×	359 2.3×	143	3.0k
J. Kolodzey	2.2k 0.7×	1.1k 0.7×	830 1.1×	413 0.8×	115 0.7×	176	2.5k
Lis K. Nanver	2.5k 0.8×	779 0.5×	563 0.7×	577 1.1×	103 0.7×	272	2.9k
R. A. Hamm	2.8k 0.9×	2.4k 1.5×	544 0.7×	370 0.7×	71 0.5×	167	3.3k
Judy L. Hoyt	4.6k 1.5×	1.4k 0.9×	767 1.0×	965 1.8×	69 0.4×	173	4.9k
J.R. Brews	4.1k 1.3×	1.3k 0.8×	873 1.1×	328 0.6×	223 1.4×	71	4.4k

Countries citing papers authored by B. E. Weir

Since Specialization

Citations

This map shows the geographic impact of B. E. Weir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. E. Weir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. E. Weir more than expected).

Fields of papers citing papers by B. E. Weir

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. E. Weir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. E. Weir. The network helps show where B. E. Weir may publish in the future.

Co-authorship network of co-authors of B. E. Weir

This figure shows the co-authorship network connecting the top 25 collaborators of B. E. Weir. A scholar is included among the top collaborators of B. E. Weir based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. E. Weir. B. E. Weir is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Varghese, Dhanoop, Muhammad A. Alam, & B. E. Weir. (2010). A generalized, I<inf>B</inf>-independent, physical HCI lifetime projection methodology based on universality of hot-carrier degradation. 1091–1094. 27 indexed citations

Weir, B. E., et al.. (2005). Gate dielectric breakdown in the time-scale of ESD events. Microelectronics Reliability. 45(3-4). 427–436. 12 indexed citations

Alam, Md Ashraful, B. E. Weir, P. J. Silvėrman, et al.. (2003). An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited. 715–718. 12 indexed citations

Alam, Md Ashraful, et al.. (2002). Uncorrelated breakdown of integrated circuits. Nature. 420(6914). 378–378. 55 indexed citations

Weir, B. E., P. J. Silvėrman, D. Monroe, et al.. (2002). Ultra-thin gate dielectrics: they break down, but do they fail?. 73–76. 120 indexed citations

Sorsch, T., Winston Timp, F.H. Baumann, et al.. (2002). Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology. 222–223. 9 indexed citations

Alam, Md. Ashraful, B. E. Weir, & P. J. Silvėrman. (2002). The prospect of using thin oxides for silicon nanotransistors. ed 32. 30–34. 3 indexed citations

Weir, B. E., Md Ashraful Alam, & P. J. Silvėrman. (2001). Soft breakdown at all positions along the N-MOSFET. Microelectronic Engineering. 59(1-4). 17–23. 11 indexed citations

Sorsch, T., G. Timp, David A. Muller, et al.. (1999). Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS. Microelectronic Engineering. 48(1-4). 25–30. 55 indexed citations

10.

Hull, R., J. C. Bean, L. J. Peticolas, et al.. (1994). Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures. Applied Physics Letters. 65(3). 327–329. 25 indexed citations

11.

Kalish, R., K.-K. Law, J. L. Merz, et al.. (1992). Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks. Applied Physics Letters. 61(21). 2589–2591. 5 indexed citations

12.

Kola, R. R., David L. Windt, W. K. Waskiewicz, et al.. (1992). Stress relaxation in Mo/Si multilayer structures. Applied Physics Letters. 60(25). 3120–3122. 40 indexed citations

13.

Fitzgerald, Eugene A., Ya Xie, M. L. Green, et al.. (1991). Strain-Free Ge_xSi_1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates. MRS Proceedings. 220. 14 indexed citations

14.

Benton, J. L., Jürgen Michel, L. C. Kimerling, B. E. Weir, & Richard A. Gottscho. (1991). Carbon reactions in reactive ion etched silicon. Journal of Electronic Materials. 20(9). 643–647. 16 indexed citations

15.

Fitzgerald, Eugene A., P. E. Freeland, M. T. Asom, et al.. (1991). Epitaxially stabilized GexSn1−x diamond cubic alloys. Journal of Electronic Materials. 20(6). 489–501. 36 indexed citations

16.

Fitzgerald, Eugene A., Ya Xie, D. Brasen, et al.. (1990). Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates. Journal of Electronic Materials. 19(9). 949–955. 28 indexed citations

17.

Headrick, Randall L., B. E. Weir, J. Bevk, et al.. (1990). Influence of surface reconstruction on the orientation of homoepitaxial silicon films. Physical Review Letters. 65(9). 1128–1131. 60 indexed citations

18.

Hasnain, G., K. Tai, J. D. Wynn, et al.. (1990). Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors. Electronics Letters. 26(19). 1590–1592. 14 indexed citations

19.

Katz, A., S. N. G. Chu, B. E. Weir, et al.. (1990). Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing. Journal of Applied Physics. 68(8). 4141–4150. 14 indexed citations

20.

Hoerni, J. A. & B. E. Weir. (1963). Conditions for a temperature compensated silicon field effect transistor. Proceedings of the IEEE. 51(7). 1058–1059. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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