D. J. Eaglesham

11.9k total citations · 4 hit papers
173 papers, 9.7k citations indexed

About

D. J. Eaglesham is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, D. J. Eaglesham has authored 173 papers receiving a total of 9.7k indexed citations (citations by other indexed papers that have themselves been cited), including 136 papers in Electrical and Electronic Engineering, 82 papers in Atomic and Molecular Physics, and Optics and 33 papers in Computational Mechanics. Recurrent topics in D. J. Eaglesham's work include Silicon and Solar Cell Technologies (91 papers), Semiconductor materials and interfaces (64 papers) and Semiconductor materials and devices (52 papers). D. J. Eaglesham is often cited by papers focused on Silicon and Solar Cell Technologies (91 papers), Semiconductor materials and interfaces (64 papers) and Semiconductor materials and devices (52 papers). D. J. Eaglesham collaborates with scholars based in United States, United Kingdom and Italy. D. J. Eaglesham's co-authors include M. Cerullo, J. M. Poate, D. C. Jacobson, H.‐J. Gossmann, P.A. Stolk, T. E. Haynes, J. L. Benton, H.-J. Gossmann, Aditya Agarwal and George H. Gilmer and has published in prestigious journals such as Nature, Physical Review Letters and Nano Letters.

In The Last Decade

D. J. Eaglesham

167 papers receiving 9.3k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

1990 1.6k citations D. J. Eaglesham, M. Cerullo profile →
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

1997 496 citations P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics profile →
Equilibrium shape of Si

1993 446 citations D. J. Eaglesham, D. C. Jacobson et al. profile →
Implantation and transient B diffusion in Si: The source of the interstitials

1994 421 citations D. J. Eaglesham, P.A. Stolk et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by D. J. Eaglesham

Since Specialization

Citations

This map shows the geographic impact of D. J. Eaglesham's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Eaglesham with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Eaglesham more than expected).

Fields of papers citing papers by D. J. Eaglesham

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Eaglesham. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Eaglesham. The network helps show where D. J. Eaglesham may publish in the future.

Co-authorship network of co-authors of D. J. Eaglesham

This figure shows the co-authorship network connecting the top 25 collaborators of D. J. Eaglesham. A scholar is included among the top collaborators of D. J. Eaglesham based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. J. Eaglesham. D. J. Eaglesham is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model 1998 ·Journal of Applied Physics ·S. B. Herner, H.-J. Gossmann, Lourdes Pelaz, George H. Gilmer, M. Jaraı́z, D. C. Jacobson, D. J. Eaglesham	13
2	Atomistic Modeling of Point and Extended Defects in Crystalline Materials 1998 ·MRS Proceedings ·M. Jaraı́z, Lourdes Pelaz, (unknown), J. Barbolla, George H. Gilmer, D. J. Eaglesham, (unknown), J. M. Poate	54
3	Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon 1997 ·MRS Proceedings ·Lourdes Pelaz, George H. Gilmer, M. Jaraı́z, H.-J. Gossmann, C.S. Rafferty, D. J. Eaglesham, J. M. Poate	4
4	Transient enhanced diffusion of Sb and B due to MeV silicon implants 1997 ·Applied Physics Letters ·D. J. Eaglesham, T. E. Haynes, H.‐J. Gossmann, D. C. Jacobson, P.A. Stolk, J. M. Poate	37
5	Simulation of cluster evaporation and transient enhanced diffusion in silicon 1996 ·Applied Physics Letters ·C.S. Rafferty, George H. Gilmer, M. Jaraı́z, D. J. Eaglesham, H.‐J. Gossmann	120
6	Dopants, defects and diffusion 1995 ·Physics World ·D. J. Eaglesham	14
7	Properties of Point-Defects in Si for Process Modeling 1995 ·MRS Proceedings ·H.‐J. Gossmann, C.S. Rafferty, P.A. Stolk, D. J. Eaglesham, George H. Gilmer, J. M. Poate, H.-H. Vuong, (unknown), Michael O. Thompson	3
8	Mechanisms of thin film evolution 1994 ·S. M. Yalisove, (unknown), D. J. Eaglesham	57
9	Interfacial and surface energetics of CoSi2 1994 ·Journal of Applied Physics ·David P. Adams, S. M. Yalisove, D. J. Eaglesham	35
10	Giant variation in Schottky barrier height observed in the Co/Si system 1993 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·James P. Sullivan, R. T. Tung, D. J. Eaglesham, F. Schrey, W. R. M. Graham	24
11	Rapid thermal annealing of low-temperature-grown GaAs photoconductors 1992 ·Conference on Lasers and Electro-Optics ·U. D. Keil, D. R. Dykaar, D. J. Eaglesham, B. I. Greene, L. N. Pfeiffer, R. F. Kopf, Peter N. Saeta, S. Darack, K. W. West	0
12	Growth of Single Crystal Si/NiSi₂/Si(100) and Si/CoSi₂/Si(100) Structures by Molecular Beam Epitaxy and Furnace Annealing 1992 ·MRS Proceedings ·R. T. Tung, D. J. Eaglesham, F. Schrey, James P. Sullivan	2
13	The origin of dislocations in multilayers 1991 ·Journal de Physique III ·C. J. Humphreys, D. M. Maher, D. J. Eaglesham, E. P. Kvam, (unknown)	9
14	Microstructure of erbium-implanted Si 1991 ·Applied Physics Letters ·D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, Albert Polman, Y. H. Xie, Lionel C. Kimerling	130
15	Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C 1991 ·Applied Physics Letters ·D. J. Eaglesham, L. N. Pfeiffer, K. W. West, D. R. Dykaar	67
16	Low-temperature Si molecular beam epitaxy: Solution to the doping problem 1990 ·Applied Physics Letters ·H.-J. Gossmann, E. F. Schubert, D. J. Eaglesham, M. Cerullo	45
17	Applications of convergent beam electron diffraction in materials science 1989 ·Journal of Electron Microscopy Technique ·D. J. Eaglesham	4
18	Tetragonal and monoclinic forms of GexSi1−x epitaxial layers 1989 ·Applied Physics Letters ·D. J. Eaglesham, D. M. Maher, Hamish L. Fraser, C. J. Humphreys, J. C. Bean	19
19	Compositional modulations in GexSi1−x heteroepitaxial layers 1989 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·HL Fraser, D. M. Maher, R. V. Knoell, D. J. Eaglesham, C. J. Humphreys, J. C. Bean	5
20	New phases in the superconducting Y:Ba:Cu:O system 1987 ·Applied Physics Letters ·D. J. Eaglesham, C. J. Humphreys, Neil McN. Alford, W.J. Clegg, MP Harmer, J. D. Birchall	43

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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