D.B.M. Klaassen

6.0k total citations · 2 hit papers
100 papers, 4.4k citations indexed

About

D.B.M. Klaassen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D.B.M. Klaassen has authored 100 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in D.B.M. Klaassen's work include Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (51 papers) and Radio Frequency Integrated Circuit Design (34 papers). D.B.M. Klaassen is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (51 papers) and Radio Frequency Integrated Circuit Design (34 papers). D.B.M. Klaassen collaborates with scholars based in Netherlands, Finland and Belgium. D.B.M. Klaassen's co-authors include G.A.M. Hurkx, A.J. Scholten, R. van Langevelde, P.A. Stolk, L.F. Tiemeijer, F. Widdershoven, J.W. Slotboom, H.C. de Graaff, G.D.J. Smit and P.H. Woerlee and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

D.B.M. Klaassen

95 papers receiving 4.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A new recombination model for device simulation including tunneling

1992 724 citations G.A.M. Hurkx, D.B.M. Klaassen et al. IEEE Transactions on Electron Devices profile →
A unified mobility model for device simulation—I. Model equations and concentration dependence

1992 675 citations D.B.M. Klaassen Solid-State Electronics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D.B.M. Klaassen Netherlands	26	4.1k	833	533	530	186	100	4.4k
H. L. Grubin United States	16	2.3k 0.6×	1.3k 1.5×	314 0.6×	709 1.3×	142 0.8×	95	2.9k
Chih‐Tang Sah United States	31	4.4k 1.1×	1.5k 1.8×	276 0.5×	869 1.6×	96 0.5×	118	4.7k
D. A. Buchanan United States	32	4.2k 1.0×	714 0.9×	441 0.8×	1.6k 2.9×	44 0.2×	96	4.9k
Avik W. Ghosh United States	34	2.6k 0.6×	2.2k 2.7×	532 1.0×	2.4k 4.5×	61 0.3×	161	4.6k
G.W. Taylor United States	24	2.6k 0.6×	1.1k 1.4×	201 0.4×	900 1.7×	120 0.6×	172	3.3k
Samarth Jain India	8	2.6k 0.6×	1.2k 1.4×	484 0.9×	1.0k 1.9×	197 1.1×	9	3.2k
S.E. Laux United States	30	3.7k 0.9×	1.7k 2.0×	704 1.3×	534 1.0×	33 0.2×	75	4.3k
Youjian Song China	29	2.4k 0.6×	2.4k 2.8×	270 0.5×	396 0.7×	49 0.3×	175	3.2k
R. H. Rediker United States	23	2.4k 0.6×	1.3k 1.6×	316 0.6×	777 1.5×	171 0.9×	85	3.0k
E.F. Crabbé United States	23	3.3k 0.8×	1.0k 1.2×	556 1.0×	1.2k 2.2×	32 0.2×	72	3.5k

Countries citing papers authored by D.B.M. Klaassen

Since Specialization

Citations

This map shows the geographic impact of D.B.M. Klaassen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.B.M. Klaassen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.B.M. Klaassen more than expected).

Fields of papers citing papers by D.B.M. Klaassen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.B.M. Klaassen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.B.M. Klaassen. The network helps show where D.B.M. Klaassen may publish in the future.

Co-authorship network of co-authors of D.B.M. Klaassen

This figure shows the co-authorship network connecting the top 25 collaborators of D.B.M. Klaassen. A scholar is included among the top collaborators of D.B.M. Klaassen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.B.M. Klaassen. D.B.M. Klaassen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Viet, Dinh Thanh, et al.. (2013). Investigation of power and linearity performance for low- and high-voltage SiGe HBTs. 46. 9–12.

Scholten, A.J., G.D.J. Smit, Ralf Pijper, et al.. (2009). Experimental assessment of self-heating in SOI FinFETs. University of Twente Research Information. 1–4. 78 indexed citations

Cheng, Wei, Anne-Johan Annema, J.A. Croon, D.B.M. Klaassen, & Bram Nauta. (2008). A general weak nonlinearity model for LNAs. University of Twente Research Information. 54. 221–224. 10 indexed citations

Smit, G.D.J., A.J. Scholten, Ralf Pijper, et al.. (2006). PSP-based compact FinFET model describing dc and RF measurements. Institutional Research Information System (University of Udine). 1–4. 27 indexed citations

Aarts, A.C.T., R. van der Hout, J.C.J. Paasschens, et al.. (2006). New fundamental insights into capacitance modeling of laterally non-uniform MOS devices. TU/e Research Portal (Eindhoven University of Technology). 620. 1 indexed citations

Klaassen, D.B.M., R. van Langevelde, & A.J. Scholten. (2004). Compact CMOS Modelling for Advanced Analogue and RF Applications. IEICE Transactions on Electronics. 87(6). 854–866. 6 indexed citations

Havens, R.J., D.B.M. Klaassen, A.J. Scholten, et al.. (2003). Noise Modeling with MOS Model 11 for RF-CMOS Applications. TechConnect Briefs. 2(2003). 286–289. 1 indexed citations

Langevelde, R. van, L.F. Tiemeijer, R.J. Havens, et al.. (2002). RF-distortion in deep-submicron CMOS technologies. 807–810. 50 indexed citations

Tiemeijer, L.F., et al.. (1999). MOS Model 9 based Non-Quasi-Static Small-Signal Model for RF Circuit Design. European Solid-State Device Research Conference. 1. 652–655. 1 indexed citations

10.

Klaassen, D.B.M., R. van Langevelde, A.J. Scholten, & L.F. Tiemeijer. (1999). Challenges in Compact Modelling of Future RF CMOS. European Solid-State Device Research Conference. 1. 95–102. 3 indexed citations

11.

Montree, A.H., et al.. (1999). Limitations to Adaptive Back Bias Approach for Standby Power Reduction in deep sub-micron CMOS. European Solid-State Device Research Conference. 1. 580–583. 6 indexed citations

12.

Bennebroek, Martijn, et al.. (1998). Layout Capacitance Extraction for Low-Power RF Circuitry in Silicon-On-Anything. European Solid-State Device Research Conference. 488–491. 1 indexed citations

13.

Tiemeijer, L.F. & D.B.M. Klaassen. (1998). Geometry Scaling of the Substrate Loss of RF MOSFETs. European Solid-State Device Research Conference. 480–483. 20 indexed citations

14.

Stolk, P.A., F. Widdershoven, & D.B.M. Klaassen. (1998). Modeling statistical dopant fluctuations in MOS transistors. IEEE Transactions on Electron Devices. 45(9). 1960–1971. 314 indexed citations

15.

Brown, Adam R., Dago M. de Leeuw, D.B.M. Klaassen, et al.. (1996). Precursor route pentacene metal-insulator-semiconductor field-effect transistors. Journal of Applied Physics. 79(4). 2136–2138. 134 indexed citations

16.

Leeuw, D.M. de, et al.. (1994). Electroplating of conductive polymers for the metallization of insulators. Synthetic Metals. 66(3). 263–273. 149 indexed citations

17.

Slotboom, J.W., M.J. van Dort, G.A.M. Hurkx, et al.. (1993). Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach. European Solid-State Device Research Conference. 327–334. 1 indexed citations

18.

Klaassen, D.B.M.. (1992). A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime. Solid-State Electronics. 35(7). 961–967. 352 indexed citations

19.

Klaassen, D.B.M.. (1988). Optical detection of x-ray-absorption spectra: Sodium salicylate as an example. Physical review. B, Condensed matter. 38(14). 9974–9979. 5 indexed citations

20.

Klaassen, D.B.M., D.M. de Leeuw, & T. Welker. (1984). Systematic analysis of phosphor degradation under cathode-ray excitation.. TuE3–TuE3.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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