F. Perrier

418 total citations
11 papers, 304 citations indexed

About

F. Perrier is a scholar working on Electrical and Electronic Engineering, Infectious Diseases and Organic Chemistry. According to data from OpenAlex, F. Perrier has authored 11 papers receiving a total of 304 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 0 papers in Infectious Diseases and 0 papers in Organic Chemistry. Recurrent topics in F. Perrier's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). F. Perrier is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). F. Perrier collaborates with scholars based in France, India and Finland. F. Perrier's co-authors include A. Bravaix, M. Denais, V. Huard, C. Parthasarathy, N. Revil, G. Ribes, Emmanuel Vincent, C. Guérin, D. Roy and F. Arnaud and has published in prestigious journals such as Microelectronics Reliability and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

F. Perrier

11 papers receiving 293 citations

Peers

F. Perrier

EEE

MC

HA

AMPO

CMP

V. D. Maheta India

Wolfgang Heinrigs Germany

Philipp Hehenberger Austria

María Toledano Luque Belgium

Uma Sharma India

Andrei Shibkov United States

N. Revil France

A. Concannon United States

Y.T. Chia Taiwan

S. Rangan United States

V. D. Maheta India

F. Perrier

406 ×1.3

EEE

34 ×1.5

MC

7 ×0.5

HA

15 ×1.1

AMPO

2 ×0.7

CMP

Citations per year, relative to F. Perrier F. Perrier (= 1×) peers V. D. Maheta

Countries citing papers authored by F. Perrier

Since Specialization

Citations

This map shows the geographic impact of F. Perrier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Perrier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Perrier more than expected).

Fields of papers citing papers by F. Perrier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Perrier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Perrier. The network helps show where F. Perrier may publish in the future.

Co-authorship network of co-authors of F. Perrier

This figure shows the co-authorship network connecting the top 25 collaborators of F. Perrier. A scholar is included among the top collaborators of F. Perrier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Perrier. F. Perrier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

1.

Denais, M., A. Bravaix, V. Huard, et al.. (2006). Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies. 735–736. 22 indexed citations

2.

Guérin, C., et al.. (2006). Combined effect of NBTI and Channel Hot Carrier effects in pMOSFETs. 10–16. 11 indexed citations

3.

Parthasarathy, C., M. Denais, V. Huard, et al.. (2006). Designing in reliability in advanced CMOS technologies. Microelectronics Reliability. 46(9-11). 1464–1471. 21 indexed citations

4.

Denais, M., V. Huard, G. Ribes, et al.. (2005). New perspectives on NBTI in advanced technologies: modelling & characterization. 399–402. 15 indexed citations

5.

Denais, M., A. Bravaix, V. Huard, et al.. (2005). New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing. 24. 121–124. 7 indexed citations

6.

Denais, M., V. Huard, C. Parthasarathy, et al.. (2005). Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS. 109–112. 6 indexed citations

7.

Bravaix, A., D. Goguenheim, M. Denais, et al.. (2005). Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectronics Reliability. 45(9-11). 1370–1375. 9 indexed citations

8.

Denais, M., V. Huard, C. Parthasarathy, et al.. (2004). Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide. 1–6. 9 indexed citations

9.

Denais, M., V. Huard, C. Parthasarathy, et al.. (2004). New methodologies of NBTI characterization eliminating recovery effects. 265–268. 10 indexed citations

10.

Huard, V., M. Denais, F. Perrier, et al.. (2004). A thorough investigation of MOSFETs NBTI degradation. Microelectronics Reliability. 45(1). 83–98. 101 indexed citations

11.

Denais, M., V. Huard, C. Parthasarathy, et al.. (2004). Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide. IEEE Transactions on Device and Materials Reliability. 4(4). 715–722. 93 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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