K.F. Galloway

5.7k total citations
214 papers, 4.6k citations indexed

About

K.F. Galloway is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K.F. Galloway has authored 214 papers receiving a total of 4.6k indexed citations (citations by other indexed papers that have themselves been cited), including 191 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K.F. Galloway's work include Semiconductor materials and devices (143 papers), Radiation Effects in Electronics (108 papers) and Advancements in Semiconductor Devices and Circuit Design (100 papers). K.F. Galloway is often cited by papers focused on Semiconductor materials and devices (143 papers), Radiation Effects in Electronics (108 papers) and Advancements in Semiconductor Devices and Circuit Design (100 papers). K.F. Galloway collaborates with scholars based in United States, France and Finland. K.F. Galloway's co-authors include Ronald D. Schrimpf, Daniel M. Fleetwood, G.H. Johnson, R.L. Pease, J.L. Titus, Arthur F. Witulski, J.R. Brews, M. Allenspach, Arto Javanainen and S.C. Witczak and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K.F. Galloway

209 papers receiving 4.4k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
K.F. Galloway 4.3k 403 257 242 197 214 4.6k
P.S. Winokur 6.6k 1.5× 887 2.2× 530 2.1× 337 1.4× 146 0.7× 115 6.8k
F. B. McLean 4.0k 0.9× 783 1.9× 460 1.8× 171 0.7× 170 0.9× 60 4.3k
Kazuyuki Hirose 2.2k 0.5× 730 1.8× 396 1.5× 281 1.2× 136 0.7× 135 2.5k
J.M. McGarrity 2.7k 0.6× 388 1.0× 330 1.3× 92 0.4× 111 0.6× 67 2.9k
Timothy R. Oldham 3.3k 0.8× 351 0.9× 183 0.7× 259 1.1× 62 0.3× 83 3.4k
P. V. Dressendorfer 4.0k 0.9× 988 2.5× 440 1.7× 181 0.7× 225 1.1× 59 4.4k
J. R. Srour 1.8k 0.4× 253 0.6× 240 0.9× 90 0.4× 92 0.5× 52 2.0k
J.M. Benedetto 2.2k 0.5× 810 2.0× 104 0.4× 554 2.3× 363 1.8× 52 2.7k
T. P. 2.0k 0.5× 725 1.8× 208 0.8× 80 0.3× 250 1.3× 48 2.2k
J.R. Brews 4.1k 0.9× 873 2.2× 1.3k 5.2× 96 0.4× 223 1.1× 71 4.4k

Countries citing papers authored by K.F. Galloway

Since Specialization
Citations

This map shows the geographic impact of K.F. Galloway's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.F. Galloway with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.F. Galloway more than expected).

Fields of papers citing papers by K.F. Galloway

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.F. Galloway. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.F. Galloway. The network helps show where K.F. Galloway may publish in the future.

Co-authorship network of co-authors of K.F. Galloway

This figure shows the co-authorship network connecting the top 25 collaborators of K.F. Galloway. A scholar is included among the top collaborators of K.F. Galloway based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.F. Galloway. K.F. Galloway is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martinella, C., Dennis R. Ball, John M. Hutson, et al.. (2025). Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs. IEEE Transactions on Nuclear Science. 72(8). 2386–2394.
2.
Kosier, S.L., Dennis R. Ball, John M. Hutson, et al.. (2025). Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage. IEEE Transactions on Nuclear Science. 72(4). 1418–1424. 3 indexed citations
3.
Ball, Dennis R., Andrew L. Sternberg, Robert A. Reed, et al.. (2024). LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices. IEEE Transactions on Nuclear Science. 71(4). 809–815. 19 indexed citations
4.
Ball, Dennis R., Andrew L. Sternberg, En Xia Zhang, et al.. (2024). Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices. IEEE Transactions on Nuclear Science. 71(8). 1447–1454. 8 indexed citations
5.
Barnaby, Hugh, et al.. (2021). Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs. IEEE Transactions on Electron Devices. 68(8). 4004–4009. 14 indexed citations
6.
Barnaby, Hugh, et al.. (2021). Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs. IEEE Transactions on Nuclear Science. 68(5). 611–616. 19 indexed citations
7.
Sierawski, Brian D., Robert A. Reed, Ronald D. Schrimpf, et al.. (2020). Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs. IEEE Transactions on Nuclear Science. 67(1). 353–357. 17 indexed citations
8.
Schrimpf, Ronald D., et al.. (2001). A generalized model for the lifetime of microelectronic components, applied to storage conditions. Microelectronics Reliability. 41(2). 317–322. 7 indexed citations
9.
Witczak, S.C., Ronald D. Schrimpf, Daniel M. Fleetwood, et al.. (1997). Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures. IEEE Transactions on Nuclear Science. 44(6). 1989–2000. 114 indexed citations
10.
Witczak, S.C., Ronald D. Schrimpf, K.F. Galloway, et al.. (1996). ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS. IEEE Transactions on Nuclear Science. 43. 55 indexed citations
11.
Schmidt, D., Daniel M. Fleetwood, Ronald D. Schrimpf, et al.. (1995). Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs. IEEE Transactions on Nuclear Science. 42(6). 1541–1549. 93 indexed citations
12.
Kosier, S.L., et al.. (1995). A method for predicting breakdown voltage of power devices with cylindrical diffused junctions. Solid-State Electronics. 38(8). 1547–1549. 1 indexed citations
13.
Johnson, G.H., Ronald D. Schrimpf, K.F. Galloway, & R. Koga. (1994). Temperature dependence of single-event burnout in n-channel power MOSFET's. Defense Technical Information Center (DTIC). 94. 33177. 1 indexed citations
14.
Galloway, K.F., et al.. (1994). Application of test method 1019.4 to nonhardened power MOSFETs. IEEE Transactions on Nuclear Science. 41(3). 555–560. 20 indexed citations
15.
Brews, J.R., M. Allenspach, Ronald D. Schrimpf, et al.. (1993). A conceptual model of a single-event gate-rupture in power MOSFETs. IEEE Transactions on Nuclear Science. 40(6). 1959–1966. 80 indexed citations
16.
Johnson, G.H., Ronald D. Schrimpf, K.F. Galloway, & R. Koga. (1992). Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application). IEEE Transactions on Nuclear Science. 39(6). 1605–1612. 57 indexed citations
17.
Schrimpf, Ronald D., et al.. (1992). Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions. IEEE Transactions on Nuclear Science. 39(6). 2012–2017. 14 indexed citations
18.
Titus, J.L., G.H. Johnson, Ronald D. Schrimpf, & K.F. Galloway. (1991). Single-event burnout of power bipolar junction transistors. IEEE Transactions on Nuclear Science. 38(6). 1315–1322. 41 indexed citations
19.
Dat, R., et al.. (1979). Effect of ionising radiation on mobile-ion density in m.o.s. oxides. Electronics Letters. 15(1). 16–17. 1 indexed citations
20.
Alyea, E. D., et al.. (1970). Six-Prongedπ−pInteractions at 6 BeV/c. Physical review. D. Particles, fields, gravitation, and cosmology/Physical review. D. Particles and fields. 1(1). 54–66. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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