V. Arnal

509 citations

44 papers · 297 indexed · h-index 11

Impact in

Electronic, Optical and Magnetic Materials top 10%
- Copper Interconnects and Reliability
Electrical and Electronic Engineering
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies

Papers in ⓘ

Electronic, Optical and Magnetic Materials 35
- Copper Interconnects and Reliability 35
Electrical and Electronic Engineering 38
- Semiconductor materials and devices 33
- 3D IC and TSV technologies 10
- Low-power high-performance VLSI design 3
- Electronic Packaging and Soldering Technologies 3

Co-authors: J. Torrès (22 shared papers)L.G. Gosset (11 shared papers)A. Farcy (14 shared papers)L.L. Chapelon (7 shared papers)M. Broekaart (2 shared papers)C. Guedj (17 shared papers)M. Assous (6 shared papers)T. Chevolleau (5 shared papers)
Journals: Microelectronic Engineering (15 papers)IEEE Transactions on Device and Materials Reliability (1 paper)Journal of Marine Science and Technology (1 paper)Ocean Engineering (1 paper)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (1 paper)
Partner nations: France Switzerland Belgium

In The Last Decade

V. Arnal

42 papers receiving 286 citations

Peers

Countries citing papers authored by V. Arnal

Since Specialization

Citations

This map shows the geographic impact of V. Arnal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Arnal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Arnal more than expected).

Fields of papers citing papers by V. Arnal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Arnal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Arnal. The network helps show where V. Arnal may publish in the future.

Co-authors

The 25 scholars most cited alongside V. Arnal, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Arnal Line = papers co-authored together V. Arnal links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 44 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below Microelectronic Engineering ·L.L. Chapelon, V. Arnal, M. Broekaart, L.G. Gosset, J. Vitiello, J. Torrès	2004	29
2	Advanced Cu interconnects using air gaps Microelectronic Engineering ·L.G. Gosset, A. Farcy, J. de Pontcharra, Ph. Lyan, R. Daamen, G.J.A.M. Verheijden, V. Arnal, F. Gaillard, D. Bouchu, P.H.L. Bancken, T. Vandeweyer, J. Michelon, V. Nguyen Hoang, R.J.O.M. Hoofman, J. Torrès	2005	24
3	Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD Microelectronic Engineering ·M. Dubosc, S. Casimirius, Marie‐Paule Besland, Christophe Cardinaud, A. Granier, Jean‐Luc Duvail, A. Gohier, T. Minéa, V. Arnal, J. Torrès	2007	21
4	Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material Microelectronic Engineering ·M. Aimadeddine, V. Arnal, A. Farcy, C. Guedj, T. Chevolleau, N. Possémé, David Tormey, M. Assous, O. Louveau, F. Volpi, Jose Luis Chavez Torres	2005	20
5	Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects Microelectronic Engineering ·S. Chhun, L.G. Gosset, N. Casanova, J.F. Guillaumond, P. Dumont-Girard, X. Federspiel, R. Pantel, V. Arnal, L. Arnaud, J. Torrès	2004	17
6	A new damascene architecture for high-performance metal–insulator–metal capacitors integration Microelectronic Engineering ·A. Farcy, J. Torrès, V. Arnal, M. Fayolle, H. Feldis, Fabrice Jourdan, M. Assous, J.L. Di Maria, V. Vidal	2003	15
7	Sidewall restoration of porous ultra low-k dielectrics for sub-45nm technology nodes Microelectronic Engineering ·H. Chaabouni, L.L. Chapelon, M. Aimadeddine, J. Vitiello, A. Farcy, R. Delsol, P. Brun, Davide Fossati, V. Arnal, T. Chevolleau, O. Joubert, J. Torrès	2007	15
8	32nm node BEOL integration with an extreme low-k porous SiOCH dielectric k=2.3 Microelectronic Engineering ·K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, B. Icard, Jonathan Pradelles, S. Manakli, P. Brun, G. Imbert, C. Jayet, M. Assous, S. Maı̂trejean, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. Richard, D. Barbier, M. Haond	2009	14
9	Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·N. Possémé, T. Chevolleau, R. Bouyssou, David Tormey, V. Arnal, Jean‐Paul Barnes, C. Vérove, O. Joubert	2010	13
10	Multidimensional hybrid software-in-the-loop modeling approach for experimental analysis of a floating offshore wind turbine in wave tank experiments Ocean Engineering ·Félicien Bonnefoy, Vincent Leroy, Mohammad Rasool Mojallizadeh, S. Delacroix, V. Arnal, Jean‐Christophe Gilloteaux	2024	11
11	Integration of a 3 level Cu-SiO/sub 2/ air gap interconnect for sub 0.1 micron CMOS technologies V. Arnal, J. Torrès, Philippe Gayet, R. Gonella, P. Spinelli, M. Guillermet, J.-P. Reynard, C. Vérove	2001	10
12	Line resistance behaviour in narrow lines patterned by a TiN hard mask spacer for 45 nm node interconnects Microelectronic Engineering ·W.F.A. Besling, M. Broekaart, V. Arnal, J. Torrès	2004	8
13	Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics R.J.O.M. Hoofman, J. Michelon, P.H.L. Bancken, R. Daamen, G.J.A.M. Verheijden, V. Arnal, O. Hinsinger, L.G. Gosset, A. Humbert, W.F.A. Besling, Cindy Goldberg, Robert Fox, Lynne Michaelson, C. Guedj, J.F. Guillaumond, V. Jousseaume, L. Arnaud, Dirk J. Gravesteijn, J. Torrès, G. Passemard	2005	8
14	Dielectric Conduction Mechanisms of Advanced Interconnects: Evidence for Thermally- Induced 3D /2 D Transition C. Guedj, N. Claret, V. Arnal, M. Aimadeddine, Jean‐Paul Barnes, J. C. Barbé, L. Arnaud, G. Reimbold, J. Torrès, G. Passemard, F. Boulanger	2006	7
15	Modification of porous ultra-low K dielectric by electron-beam curing Microelectronics Reliability ·C. Guedj, G. Imbert, E. Martínez, Christophe Licitra, N. Rochat, V. Arnal	2007	6
16	General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material L.G. Gosset, V. Arnal, C. Prindle, R.J.O.M. Hoofman, G.J.A.M. Verheijden, R. Daamen, Lucile Broussous, Florence Fusalba, M. Assous, Ritwik Chatterjee, J. Torrès, Dirk J. Gravesteijn, Kai Xiang Yu	2004	6
17	Optimization of CVD dielectric process to achieve reliable ultra low-k air gaps Microelectronic Engineering ·V. Arnal, Joaquin Torres, Jean–Philippe Reynard, Philippe Gayet, C. Vérove, M. Guillermet, P. Spinelli	2002	6
18	Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes M. Aimadeddine, V. Arnal, R. Roy, A. Farcy, David Tormey, T. Chevolleau, N. Possémé, J. Vitiello, L.L. Chapelon, C. Guedj, Y. Bréchet, F. Volpi, J. Torrès	2006	6
19	Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects Microelectronic Engineering ·C. Guedj, X. Portier, F. Mondon, V. Arnal, J.F. Guillaumond, L. Arnaud, Jean‐Paul Barnes, V. Jousseaume, A. Roule, S. Maı̂trejean, L.L. Chapelon, G. Reimbold, J. Torrès, G. Passemard	2005	5
20	Impact of dielectric stack and interface adhesion on mechanical properties of porous ultra low-k Microelectronic Engineering ·J. Vitiello, A. Fuchsmann, L.L. Chapelon, V. Arnal, D. Barbier, Joaquin Torres	2005	5

About V. Arnal

V. Arnal is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Mechanics of Materials, Ocean Engineering and Bioengineering, having authored 44 papers that have together received 297 indexed citations. Recurring topics across this work include Copper Interconnects and Reliability (35 papers), Semiconductor materials and devices (33 papers), 3D IC and TSV technologies (10 papers), Metal and Thin Film Mechanics (6 papers), Semiconductor materials and interfaces (5 papers), Anodic Oxide Films and Nanostructures (3 papers), Low-power high-performance VLSI design (3 papers) and Electronic Packaging and Soldering Technologies (3 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (192 citations), Electrical and Electronic Engineering (245 citations), Mechanics of Materials (65 citations), Ceramics and Composites (14 citations) and Materials Chemistry (59 citations). V. Arnal has collaborated with scholars based in France, Switzerland and Belgium. Frequent co-authors include J. Torrès, L.G. Gosset, A. Farcy, L.L. Chapelon, M. Broekaart, C. Guedj, M. Assous, T. Chevolleau, Jean‐Paul Barnes and David Tormey. Their work appears in journals such as Microelectronic Engineering, IEEE Transactions on Device and Materials Reliability, Journal of Marine Science and Technology, Ocean Engineering and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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