Wen-Fa Wu

1.4k total citations
87 papers, 841 citations indexed

About

Wen-Fa Wu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Wen-Fa Wu has authored 87 papers receiving a total of 841 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Wen-Fa Wu's work include Semiconductor materials and devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Copper Interconnects and Reliability (20 papers). Wen-Fa Wu is often cited by papers focused on Semiconductor materials and devices (64 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Copper Interconnects and Reliability (20 papers). Wen-Fa Wu collaborates with scholars based in Taiwan, United States and Japan. Wen-Fa Wu's co-authors include Chang‐Pin Chou, Hua‐Chiang Wen, Po‐Tsun Liu, Ting‐Chang Chang, Simon M. Sze, Guang-Li Luo, Fu‐Ming Pan, Wen‐Kuan Yeh, Ben‐Zu Wan and Sien Chi and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Colloid and Interface Science and Optics Express.

In The Last Decade

Wen-Fa Wu

82 papers receiving 807 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wen-Fa Wu Taiwan 15 653 298 245 175 147 87 841
Hidemitsu Aoki Japan 13 351 0.5× 269 0.9× 157 0.6× 78 0.4× 109 0.7× 96 563
Sa‐Kyun Rha South Korea 13 421 0.6× 265 0.9× 190 0.8× 44 0.3× 128 0.9× 42 562
Yanfeng Wang China 17 497 0.8× 615 2.1× 109 0.4× 141 0.8× 201 1.4× 65 755
E. San Andrés Spain 18 779 1.2× 426 1.4× 99 0.4× 102 0.6× 45 0.3× 85 925
Eero Rauhala Finland 16 708 1.1× 618 2.1× 178 0.7× 60 0.3× 112 0.8× 24 854
Chiharu Kimura Japan 15 391 0.6× 546 1.8× 150 0.6× 104 0.6× 175 1.2× 86 808
Ilsub Chung South Korea 13 438 0.7× 431 1.4× 81 0.3× 307 1.8× 68 0.5× 80 737
Bhaskar Chandra Mohanty India 17 625 1.0× 651 2.2× 79 0.3× 131 0.7× 45 0.3× 62 824

Countries citing papers authored by Wen-Fa Wu

Since Specialization
Citations

This map shows the geographic impact of Wen-Fa Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wen-Fa Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wen-Fa Wu more than expected).

Fields of papers citing papers by Wen-Fa Wu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wen-Fa Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wen-Fa Wu. The network helps show where Wen-Fa Wu may publish in the future.

Co-authorship network of co-authors of Wen-Fa Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Wen-Fa Wu. A scholar is included among the top collaborators of Wen-Fa Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wen-Fa Wu. Wen-Fa Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Yu‐Yu, Yu‐Hsuan Lin, Po-Jung Sung, et al.. (2024). Bit-Cost-Scalable 3D DRAM Architecture and Unit Cell First Demonstrated with Integrated Gate-Around and Channel-Around IGZO FETs. 1–2. 3 indexed citations
2.
3.
Chu, Chun-Lin, et al.. (2024). Fabrication of CFETs with Vertically Stacked p-SiGe/n-Si Channels by SiGe/Ge/Si Multilayer Epitaxy and Ge Selective Etching. ACS Applied Electronic Materials. 6(6). 4304–4310. 2 indexed citations
4.
Chuang, Ricky W., Zuo‐Min Tsai, Yao‐Jen Lee, et al.. (2022). A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology. IEEE Electron Device Letters. 43(11). 1798–1801. 1 indexed citations
5.
Tsai, Cheng‐Hsien, Yu‐Ming Chang, Po-Jung Sung, et al.. (2022). 3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM. IEEE Journal of the Electron Devices Society. 11. 107–113. 3 indexed citations
6.
Chu, Chun-Lin, Guang-Li Luo, Yishuo Huang, et al.. (2022). Investigation on selectively etched SiGe and Si surface for Gate-All-Around CMOS devices fabrication. 1–2. 3 indexed citations
7.
De, Sourav, Darsen D. Lu, Yao‐Jen Lee, et al.. (2021). Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology. Symposium on VLSI Technology. 1–2. 21 indexed citations
8.
Su, Chang, Hwan‐You Chang, Guang-Li Luo, et al.. (2021). Sub-60 mV/dec Germanium Nanowire Field-Effect Transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2. 1–2. 1 indexed citations
9.
Wu, Chi-Chang, et al.. (2019). Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories. IEEE Transactions on Electron Devices. 67(1). 277–282. 5 indexed citations
10.
11.
Luo, Guang-Li, Shu‐Han Hsu, Chun-Lin Chu, et al.. (2016). Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk Si. 130–131.
12.
Shih, Chun-Hsing, Mingkun Huang, Wen-Fa Wu, et al.. (2011). Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory. IEEE Transactions on Electron Devices. 58(4). 1257–1263. 1 indexed citations
13.
14.
Chen, Chao‐Wen, et al.. (2008). Effect of Thermal Annealing or Plasma Treatment on Analog Characteristics for High-k Material Capacitors. Japanese Journal of Applied Physics. 47(7R). 5374–5374. 3 indexed citations
15.
Wu, Chi-Chang, et al.. (2007). Effects of capping layers on the electrical characteristics of nickel silicided junctions. Microelectronic Engineering. 84(5-8). 1801–1805. 12 indexed citations
16.
Wen, Hua‐Chiang, et al.. (2006). Mesoporous silica reinforced by silica nanoparticles to enhance mechanical performance. Journal of Colloid and Interface Science. 305(2). 275–279. 8 indexed citations
17.
Wu, Wen-Fa, et al.. (2006). Influence of bias-temperature stressing on the electrical characteristics of SiOC:H film with Cu/TaN/Ta-gated capacitor. Journal of Electronic Materials. 35(7). 1523–1529. 3 indexed citations
18.
Sheu, Hwo‐Shuenn, et al.. (2006). Porosity Effects on Properties of Mesoporous Silica Low-k Films Prepared Using Tetraethylorthosilicate with Different Templates. Journal of The Electrochemical Society. 154(1). G1–G1. 26 indexed citations
19.
Wan, Ben‐Zu, et al.. (2003). Low Dielectric Constant Silica Films Prepared by a Templating Method. Journal of The Chinese Institute of Chemical Engineers. 34(2). 211–217. 4 indexed citations
20.
Maiti, B., Daniel Connelly, Fanghao Huang, et al.. (1999). 0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications. 25–26. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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