R. Paszkiewicz

925 total citations
133 papers, 727 citations indexed

About

R. Paszkiewicz is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Paszkiewicz has authored 133 papers receiving a total of 727 indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Condensed Matter Physics, 75 papers in Electrical and Electronic Engineering and 44 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Paszkiewicz's work include GaN-based semiconductor devices and materials (82 papers), Semiconductor materials and devices (40 papers) and Ga2O3 and related materials (36 papers). R. Paszkiewicz is often cited by papers focused on GaN-based semiconductor devices and materials (82 papers), Semiconductor materials and devices (40 papers) and Ga2O3 and related materials (36 papers). R. Paszkiewicz collaborates with scholars based in Poland, Slovakia and United States. R. Paszkiewicz's co-authors include M. Tłaczała, Adam Paszkiewicz, Tomasz Szymański, A. Szyszka, J. Misiewicz, R. Kudrawiec, S. Kochowski, Krystian Mistewicz, M. Nowak and Wojciech Macherzyński and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Sensors and Actuators B Chemical.

In The Last Decade

R. Paszkiewicz

122 papers receiving 704 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Paszkiewicz Poland 14 365 355 284 208 169 133 727
Peng Zuo China 16 404 1.1× 208 0.6× 321 1.1× 116 0.6× 242 1.4× 33 755
Y. S. Katharria India 18 401 1.1× 196 0.6× 516 1.8× 186 0.9× 204 1.2× 42 830
Kejia Wang United States 11 223 0.6× 219 0.6× 279 1.0× 128 0.6× 184 1.1× 21 574
Dipak Paramanik India 16 309 0.8× 99 0.3× 391 1.4× 106 0.5× 135 0.8× 39 648
Costel Constantin United States 13 204 0.6× 216 0.6× 469 1.7× 66 0.3× 119 0.7× 33 651
Volkan Şenay Türkiye 15 363 1.0× 117 0.3× 439 1.5× 76 0.4× 117 0.7× 54 657
Sylwia Gierałtowska Poland 17 562 1.5× 117 0.3× 558 2.0× 109 0.5× 203 1.2× 57 822
Soner Özen Türkiye 18 543 1.5× 124 0.3× 628 2.2× 121 0.6× 162 1.0× 81 968
Tae-Yeon Seong South Korea 18 557 1.5× 146 0.4× 510 1.8× 168 0.8× 199 1.2× 52 788
Xinyu Sun China 15 246 0.7× 535 1.5× 553 1.9× 132 0.6× 428 2.5× 40 955

Countries citing papers authored by R. Paszkiewicz

Since Specialization
Citations

This map shows the geographic impact of R. Paszkiewicz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Paszkiewicz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Paszkiewicz more than expected).

Fields of papers citing papers by R. Paszkiewicz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Paszkiewicz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Paszkiewicz. The network helps show where R. Paszkiewicz may publish in the future.

Co-authorship network of co-authors of R. Paszkiewicz

This figure shows the co-authorship network connecting the top 25 collaborators of R. Paszkiewicz. A scholar is included among the top collaborators of R. Paszkiewicz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Paszkiewicz. R. Paszkiewicz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Macherzyński, Wojciech, et al.. (2025). Thermal Stability of Thin Metal Films on GaN Surfaces: Morphology and Nanostructuring. Nanomaterials. 15(23). 1789–1789.
2.
Paszkiewicz, R., et al.. (2023). Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 160. 107394–107394. 3 indexed citations
3.
Szyszka, A., et al.. (2023). Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 640. 158325–158325. 1 indexed citations
4.
Kutrowska-Girzycka, Joanna, et al.. (2022). Thermal synthesis of Ga2O3/SnO2 core–shell nanowires and their structural characterization. Materials Science and Engineering B. 282. 115743–115743. 1 indexed citations
5.
Macherzyński, Wojciech, et al.. (2016). Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures. physica status solidi (a). 213(5). 1145–1149. 3 indexed citations
6.
Szyszka, A., et al.. (2016). Surface topography analysis with application of roughness area dependence method. Ultramicroscopy. 170. 77–85. 9 indexed citations
7.
Szyszka, A., et al.. (2011). Application of AFM technique for creation of patterns in nanoscale. Optica Applicata. 41. 1 indexed citations
8.
Szyszka, A., et al.. (2009). Microscale characterisation of optical and electrical parameters of UV GaN planar detectors. Journal of Electrical Engineering-elektrotechnicky Casopis. 60(5). 283–286.
9.
Macherzyński, Wojciech, et al.. (2009). Effect of annealing on electrical characteristics of platinum based Schottky contacts to N-GaN layers. Journal of Electrical Engineering-elektrotechnicky Casopis. 60(5). 276–278. 2 indexed citations
10.
Szyszka, A., et al.. (2009). Application of nanoscratching in electronic devices. Optica Applicata. 39. 711–716. 5 indexed citations
11.
Szyszka, A., et al.. (2009). Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers. Optica Applicata. 39. 723–728.
12.
Szyszka, A., et al.. (2009). Properties of AlNx thin films prepared by DC reactive magnetron sputtering. Optica Applicata. 39. 717–722. 4 indexed citations
13.
Paszkiewicz, Adam, et al.. (2007). A III -B V (N) photodetectors with functionally graded active area. Optica Applicata. 37. 161–165.
14.
Paszkiewicz, R., et al.. (2007). Solar cells conversion efficiency enhancement techniques. Optica Applicata. 37. 93–99. 5 indexed citations
15.
Paszkiewicz, R., et al.. (2007). Parameters comparison of p-i-n and quantum well solar cells. Optica Applicata. 37. 371–376. 2 indexed citations
16.
Syperek, M., et al.. (2005). Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique. Optica Applicata. 35. 529–535. 2 indexed citations
17.
Paszkiewicz, Adam, et al.. (2005). Applications of functionally graded materials in optoelectronic devices. Optica Applicata. 35(12). 663–667. 31 indexed citations
18.
Kudrawiec, R., et al.. (2004). Photoreflectance and photoluminescence of thick GaN layers grown by HVPE. Opto-Electronics Review. 435–439. 1 indexed citations
19.
Kudrawiec, R., et al.. (2002). Optical properties of nominally undoped n-type MOVPE GaN epilayers. Optica Applicata. 32. 381–388.
20.
Paszkiewicz, R.. (2002). Application of selective area epitaxy for GaN devices. Optica Applicata. 32. 503–510. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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