L.L. Chapelon

427 total citations
25 papers, 291 citations indexed

About

L.L. Chapelon is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, L.L. Chapelon has authored 25 papers receiving a total of 291 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 17 papers in Electronic, Optical and Magnetic Materials and 7 papers in Biomedical Engineering. Recurrent topics in L.L. Chapelon's work include Copper Interconnects and Reliability (17 papers), Semiconductor materials and devices (13 papers) and 3D IC and TSV technologies (12 papers). L.L. Chapelon is often cited by papers focused on Copper Interconnects and Reliability (17 papers), Semiconductor materials and devices (13 papers) and 3D IC and TSV technologies (12 papers). L.L. Chapelon collaborates with scholars based in France, Switzerland and India. L.L. Chapelon's co-authors include J. Torrès, L. Clavelier, Pierric Gueguen, L. Di Cioccio, R. Taïbi, F. de Crécy, V. Arnal, Ionut Radu, F. Rieutord and C. Chappaz and has published in prestigious journals such as Journal of The Electrochemical Society, Microelectronic Engineering and IEEE Transactions on Semiconductor Manufacturing.

In The Last Decade

L.L. Chapelon

23 papers receiving 284 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L.L. Chapelon France 11 257 128 64 43 41 25 291
Wei-Lan Chiu Taiwan 10 246 1.0× 74 0.6× 27 0.4× 35 0.8× 46 1.1× 43 290
Kai-Cheng Shie Taiwan 10 257 1.0× 109 0.9× 22 0.3× 46 1.1× 39 1.0× 25 301
D. Bouchu France 11 267 1.0× 105 0.8× 18 0.3× 33 0.8× 39 1.0× 33 294
Samuel Suhard Belgium 12 268 1.0× 46 0.4× 43 0.7× 42 1.0× 95 2.3× 48 355
B. Eyckens Belgium 6 346 1.3× 112 0.9× 47 0.7× 39 0.9× 58 1.4× 9 384
Jang‐Hi Im United States 9 419 1.6× 74 0.6× 23 0.4× 25 0.6× 106 2.6× 16 448
Melina Lofrano Belgium 11 332 1.3× 107 0.8× 33 0.5× 24 0.6× 52 1.3× 55 359
F. Chen United States 12 429 1.7× 264 2.1× 23 0.4× 32 0.7× 34 0.8× 21 446
C. Chappaz France 7 275 1.1× 99 0.8× 12 0.2× 25 0.6× 43 1.0× 17 301
Masaya Kawano Singapore 13 435 1.7× 57 0.4× 20 0.3× 16 0.4× 80 2.0× 45 465

Countries citing papers authored by L.L. Chapelon

Since Specialization
Citations

This map shows the geographic impact of L.L. Chapelon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.L. Chapelon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.L. Chapelon more than expected).

Fields of papers citing papers by L.L. Chapelon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.L. Chapelon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.L. Chapelon. The network helps show where L.L. Chapelon may publish in the future.

Co-authorship network of co-authors of L.L. Chapelon

This figure shows the co-authorship network connecting the top 25 collaborators of L.L. Chapelon. A scholar is included among the top collaborators of L.L. Chapelon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.L. Chapelon. L.L. Chapelon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chapelon, L.L., et al.. (2024). Advances in the Thermal Study of Polymers for Microelectronics Using the Thermally Induced Curvature Approach. IEEE Transactions on Semiconductor Manufacturing. 37(3). 251–259. 1 indexed citations
2.
Chapelon, L.L., et al.. (2023). Curvature measurements to improve polymer integration in microelectronic devices. SPIRE - Sciences Po Institutional REpository. 1 indexed citations
3.
4.
5.
Cioccio, L. Di, R. Taïbi, C. Chappaz, et al.. (2012). 200°C direct bonding copper interconnects : Electrical results and reliability. 1–4. 1 indexed citations
6.
Parès, G., F. de Crécy, S. Moreau, et al.. (2011). ASSESSMENT AND CHARACTERIZATION OF STRESS INDUCED BY VIA-FIRST TSV TECHNOLOGY. IMAPSource Proceedings. 2011(1). 388–399. 2 indexed citations
7.
Cioccio, L. Di, Pierric Gueguen, R. Taïbi, et al.. (2009). An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. 1–4. 16 indexed citations
8.
Licitra, Christophe, F. Bertin, Maxime Darnon, et al.. (2008). Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectrics. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(5). 1278–1282. 12 indexed citations
9.
Coignus, J., et al.. (2007). Integrated monitoring of ULK dielectrics out-gassing and measurement of pore sealing efficiency by residual gas analysis technique. Microelectronic Engineering. 84(11). 2719–2722. 1 indexed citations
10.
Chapelon, L.L., E. Petitprez, P. Brun, A. Farcy, & J. Torrès. (2007). Evaluation of a PECVD advanced barrier (k=3.7) for 32nm CMOS technology and below. Microelectronic Engineering. 84(11). 2624–2628. 16 indexed citations
11.
Chapelon, L.L., A. Farcy, Davide Fossati, et al.. (2007). Sidewall restoration of porous ultra low-k dielectrics for sub-45nm technology nodes. Microelectronic Engineering. 84(11). 2595–2599. 15 indexed citations
12.
Arnal, V., L.G. Gosset, W.F.A. Besling, et al.. (2006). Challenges for Interconnect of Future CMOS Generations : Implementation of Emerging Processes and Alternative Architectures. ECS Meeting Abstracts. MA2005-01(15). 706–706. 1 indexed citations
13.
Chapelon, L.L., J. Torrès, Jean-Claude Royer, et al.. (2006). Measuring the Young’s modulus of ultralow-k materials with the non destructive picosecond ultrasonic method. Microelectronic Engineering. 83(11-12). 2346–2350. 18 indexed citations
14.
Farcy, A., L.G. Gosset, M. Hopstaken, et al.. (2006). New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node. Microelectronic Engineering. 83(11-12). 2130–2135. 10 indexed citations
15.
Chapelon, L.L., et al.. (2006). UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45nm node and below. Microelectronic Engineering. 83(11-12). 2136–2141. 14 indexed citations
16.
17.
Guedj, C., V. Arnal, L. Arnaud, et al.. (2005). Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects. Microelectronic Engineering. 80. 345–348. 5 indexed citations
18.
Guedj, C., V. Arnal, L. Arnaud, et al.. (2005). Influence of the diffusion barriers on the dielectric reliability of ULK/Cu advanced interconnects. 57–59. 2 indexed citations
19.
20.
Chapelon, L.L., et al.. (2004). Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below. Microelectronic Engineering. 76(1-4). 1–7. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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