A. Zenasni

678 total citations
33 papers, 550 citations indexed

About

A. Zenasni is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. Zenasni has authored 33 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 21 papers in Electronic, Optical and Magnetic Materials and 14 papers in Materials Chemistry. Recurrent topics in A. Zenasni's work include Copper Interconnects and Reliability (21 papers), Semiconductor materials and devices (19 papers) and Graphene research and applications (8 papers). A. Zenasni is often cited by papers focused on Copper Interconnects and Reliability (21 papers), Semiconductor materials and devices (19 papers) and Graphene research and applications (8 papers). A. Zenasni collaborates with scholars based in France, Switzerland and United Kingdom. A. Zenasni's co-authors include V. Jousseaume, L. Favennec, Guillaume Gerbaud, G. Passemard, Olivier Gourhant, P. Gonon, C. Vallée, Michel Bardet, J.P. Simon and P. Maury and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Zenasni

33 papers receiving 539 citations

Peers

A. Zenasni
David M. Gage United States
M. Belmahi France
D. Sweatman Australia
Svetlana Rogojevic United States
T.M. Parrill United States
M. W. Stoker United States
Moon Yong Lee South Korea
David M. Gage United States
A. Zenasni
Citations per year, relative to A. Zenasni A. Zenasni (= 1×) peers David M. Gage

Countries citing papers authored by A. Zenasni

Since Specialization
Citations

This map shows the geographic impact of A. Zenasni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Zenasni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Zenasni more than expected).

Fields of papers citing papers by A. Zenasni

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Zenasni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Zenasni. The network helps show where A. Zenasni may publish in the future.

Co-authorship network of co-authors of A. Zenasni

This figure shows the co-authorship network connecting the top 25 collaborators of A. Zenasni. A scholar is included among the top collaborators of A. Zenasni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Zenasni. A. Zenasni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mannequin, C., L. Latu‐Romain, V. Jousseaume, et al.. (2016). Graphene-HfO2-based resistive RAM memories. Microelectronic Engineering. 161. 82–86. 23 indexed citations
2.
Mazzocco, Riccardo, et al.. (2015). Surface and interfacial interactions of multilayer graphitic structures with local environment. Thin Solid Films. 585. 31–39. 2 indexed citations
3.
Sahli, Salah, et al.. (2014). Dielectric properties of SiOx like films deposited from TMS/O2 mixture in low pressure microwave plasma. Vacuum. 107. 264–268. 10 indexed citations
4.
Vergnes, Hugues, et al.. (2013). The Role of the Gas Phase in Graphene Formation by CVD on Copper. Chemical Vapor Deposition. 20(1-2-3). 51–58. 16 indexed citations
5.
Vergnes, Hugues, et al.. (2013). High quality graphene synthesized by atmospheric pressure CVD on copper foil. Surface and Coatings Technology. 230. 87–92. 23 indexed citations
6.
Vallée, C., et al.. (2013). Wafer scale catalytic growth of graphene on nickel by solid carbon source. Carbon. 66. 48–56. 38 indexed citations
7.
Clavel, Michael, T. Poiroux, M. Mouis, et al.. (2012). Study of annealing temperature influence on the performance of top gated graphene/SiC transistors. Solid-State Electronics. 71. 2–6. 3 indexed citations
8.
Jousseaume, V., Olivier Gourhant, P. Gonon, A. Zenasni, & L. Favennec. (2012). Publisher's Note: Dielectric Constant of Porous Ultra Low-κ Thin Films [J. Electrochem. Soc., 159, G49 (2012)]. Journal of The Electrochemical Society. 159(5). S11–S11. 1 indexed citations
9.
Ayral, A., Pierre‐Antoine Albouy, Christophe Licitra, et al.. (2011). Hydrophobic mesostructured organosilica-based thin films with tunable mesopore ordering. Microporous and Mesoporous Materials. 150. 64–75. 11 indexed citations
10.
Gourhant, Olivier, Guillaume Gerbaud, A. Zenasni, et al.. (2010). Crosslinking of porous SiOCH films involving Si–O–C bonds: Impact of deposition and curing. Journal of Applied Physics. 108(12). 34 indexed citations
11.
Gerbaud, Guillaume, Sabine Hediger, Michel Bardet, et al.. (2009). Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR. Physical Chemistry Chemical Physics. 11(42). 9729–9729. 17 indexed citations
12.
Blampey, B., A. Farcy, T. Lacrevaz, et al.. (2009). Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32nm node. Microelectronic Engineering. 87(3). 329–332. 1 indexed citations
13.
Jousseaume, V., Olivier Gourhant, A. Zenasni, M. Maret, & J.P. Simon. (2009). Grazing incidence small angle x-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition. Applied Physics Letters. 95(2). 4 indexed citations
14.
Licitra, Christophe, F. Bertin, Maxime Darnon, et al.. (2008). Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectrics. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(5). 1278–1282. 12 indexed citations
15.
Jousseaume, V., L. Favennec, A. Zenasni, & Olivier Gourhant. (2007). Porous ultra low k deposited by PECVD: From deposition to material properties. Surface and Coatings Technology. 201(22-23). 9248–9251. 25 indexed citations
16.
Arnal, V., A. Farcy, V. Jousseaume, et al.. (2007). Materials and processes for high signal propagation performance and reliable 32 nm node BEOL. 1–3. 3 indexed citations
17.
Zenasni, A., V. Jousseaume, Philippe Holliger, et al.. (2007). The role of ultraviolet radiation during ultralow k films curing: Strengthening mechanisms and sacrificial porogen removal. Journal of Applied Physics. 102(9). 52 indexed citations
18.
Zenasni, A., et al.. (2006). Investigation of Porogen Behavior during the Curing Process of Ultralow-k Spin-On Materials. Journal of The Electrochemical Society. 154(1). G6–G6. 22 indexed citations
19.
Favennec, L., V. Jousseaume, A. Zenasni, D. Bouchu, & G. Passemard. (2006). New low k a-SiC:H dielectric barrier for advanced interconnects. 110–112. 2 indexed citations
20.
Jousseaume, V., et al.. (2005). Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties. Thin Solid Films. 495(1-2). 124–129. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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