S. Jeannot

482 citations

29 papers · 320 indexed · h-index 11

Impact in

Electrical and Electronic Engineering
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
Polymers and Plastics
- Transition Metal Oxide Nanomaterials

Papers in ⓘ

Electrical and Electronic Engineering 27
- Semiconductor materials and devices 19
- Ferroelectric and Negative Capacitance Devices 15
- Advanced Memory and Neural Computing 12
- Semiconductor Lasers and Optical Devices 4
- Photonic and Optical Devices 4
- Advancements in Semiconductor Devices and Circuit Design 4
Electronic, Optical and Magnetic Materials 5
- Copper Interconnects and Reliability 5

Co-authors: L. Perniola (9 shared papers)H. Grampeix (4 shared papers)Elisa Vianello (6 shared papers)P. Blaise (4 shared papers)B. De Salvo (4 shared papers)Yoshio Nishi (2 shared papers)Boubacar Traoré (3 shared papers)P. Gonon (4 shared papers)
Journals: Journal of Applied Physics (2 papers)Thin Solid Films (2 papers)physica status solidi (RRL) - Rapid Research Letters (2 papers)Applied Physics Letters (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: France Switzerland United States

In The Last Decade

S. Jeannot

25 papers receiving 309 citations

Peers

Countries citing papers authored by S. Jeannot

Since Specialization

Citations

This map shows the geographic impact of S. Jeannot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Jeannot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Jeannot more than expected).

Fields of papers citing papers by S. Jeannot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Jeannot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Jeannot. The network helps show where S. Jeannot may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Jeannot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Jeannot Line = papers co-authored together S. Jeannot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 29 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, Elisa Vianello, H. Grampeix, S. Jeannot, L. Perniola, B. De Salvo, Yoshio Nishi	2015	77
2	Microscopic understanding of the low resistance state retention in HfO<inf>2</inf> and HfAlO based RRAM Boubacar Traoré, P. Blaise, Elisa Vianello, H. Grampeix, A. Bonnevialle, E. Jalaguier, G. Molas, S. Jeannot, L. Perniola, B. DeSalvo, Yoshio Nishi	2014	28
3	Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications Thin Solid Films ·A. Salaün, H. Grampeix, Julien Buckley, C. Mannequin, C. Vallée, P. Gonon, S. Jeannot, C. Gaumer, M. Gros‐Jean, V. Jousseaume	2012	27
4	Endurance/Retention Trade Off in HfOx and TaOx Based RRAM M. Azzaz, Elisa Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, Minrui Yu, Lavinia Nistor, C. Fenouillet-Béranger, L. Perniola	2016	26
5	Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO<inf>2</inf>-RRAM integrated in a 65nm CMOS technology T. Diokh, Elise Le-Roux, S. Jeannot, M. Gros‐Jean, P. Candelier, J. F. Nodin, V. Jousseaume, L. Perniola, H. Grampeix, T. Cabout, E. Jalaguier, M. Guillermet, B. De Salvo	2013	23
6	Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology Thin Solid Films ·T. Diokh, Elise Le-Roux, S. Jeannot, C. Cagli, V. Jousseaume, Jean-François Nodin, M. Gros‐Jean, C. Gaumer, M. Mellier, J. Cluzel, C. Carabasse, Philippe Candelier, B. De Salvo	2012	23
7	Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 Solid-State Electronics ·M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2016	16
8	Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation Applied Physics Letters ·J.‐P. Manceau, S. Bruyère, S. Jeannot, Alain Sylvestre, P. Gonon	2007	14
9	Current Instability, Permittivity Variation With Frequency, and Their Relationship in $\hbox{Ta}_{2}\hbox{O}_{5}$ Capacitor IEEE Transactions on Device and Materials Reliability ·Jean-Philippe Manceau, S. Bruyère, S. Jeannot, Alain Sylvestre, P. Gonon	2007	12
10	Benefit of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2015	11
11	Comparison of optical passive integrated devices based on three materials for optical clock distribution TU/e Research Portal (Eindhoven University of Technology) ·Bing Han, (unknown), T. Benyattou, (unknown), S. Jeannot, (unknown), X.J.M. Leijtens	2007	10
12	Ultra compact optical link made in amorphous silicon waveguide Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·R. Orobtchouk, S. Jeannot, Bingxin Han, T. Benyattou, Jean-Marc Fédéli, P. Mur	2006	7
13	Leakage current variation with time in Ta2O5 MIM and MIS capacitors J-p. Manceau, S. Bruyère, S. Jeannot, Alain Sylvestre, P. Gonon	2006	7
14	Technology-circuit convergence for full-SOC platform in 28 nm and beyond F. Arnaud, Steve Colquhoun, A.L. Mareau, S. Kohler, S. Jeannot, F. Hasbani, R. Paulin, S. Crémer, C. Charbuillet, G. Druais, P. Scheer	2011	7
15	Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches IEEE Transactions on Nanotechnology ·Marina Labalette, S. Jeannot, S. Blonkowski, Yann Beilliard, Serge Ecoffey, A. Souifi, Dominique Drouin	2017	6
16	A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions Journal of Nanomaterials ·Dominique Drouin, Gabriel Droulers, Marina Labalette, Bruno Lee Sang, Patrick Harvey-Collard, Abdelkader Souifi, S. Jeannot, S. Monfray, Michel Pioro-Ladrière, Serge Ecoffey	2017	5
17	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications ECS Transactions ·Julien Ferrand, V. Beugin, Alexandre Crisci, Stéphane Coindeau, S. Jeannot, M. Gros‐Jean, E. Blanquet	2013	4
18	On the impact of the oxide thickness and reset conditions on activation energy of HfO<inf>2</inf> based ReRAM extracted through disturb measurements T. Diokh, Elise Le-Roux, S. Jeannot, P. Candelier, L. Perniola, J. F. Nodin, V. Jousseaume, T. Cabout, H. Grampei, E. Jalaguier, B. De Salvo	2013	3
19	Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40nm floating gate embedded-flash memory Microelectronics Reliability ·Adam Dobri, S. Jeannot, F. Piazza, C. Jahan, J. Coignus, L. Perniola, F. Balestra	2016	3
20	Toward next high performances MIM generation: up to 30fF/μm<sup>2</sup> with 3D architecture and high-κ materials S. Jeannot, A. Bajolet, J.‐P. Manceau, S. Crémer, E. Deloffre, J.-P. Oddou, C. Perrot, Daniel L. Benoit, Chloé M. Richard, Pierre Bouillon, S. Bruyère	2007	3

About S. Jeannot

S. Jeannot is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Ceramics and Composites, Materials Chemistry and Computational Mechanics, having authored 29 papers that have together received 320 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Advanced Memory and Neural Computing (12 papers), Copper Interconnects and Reliability (5 papers), Semiconductor Lasers and Optical Devices (4 papers), Phase-change materials and chalcogenides (4 papers), Photonic and Optical Devices (4 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (307 citations), Polymers and Plastics (47 citations), Cellular and Molecular Neuroscience (53 citations), Materials Chemistry (80 citations) and Electronic, Optical and Magnetic Materials (17 citations). S. Jeannot has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include L. Perniola, H. Grampeix, Elisa Vianello, P. Blaise, B. De Salvo, Yoshio Nishi, Boubacar Traoré, P. Gonon, E. Jalaguier and Alain Sylvestre. Their work appears in journals such as Journal of Applied Physics, Thin Solid Films, physica status solidi (RRL) - Rapid Research Letters, Applied Physics Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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