J. Mickevičius

992 total citations
79 papers, 808 citations indexed

About

J. Mickevičius is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Mickevičius has authored 79 papers receiving a total of 808 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Condensed Matter Physics, 49 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in J. Mickevičius's work include GaN-based semiconductor devices and materials (71 papers), Semiconductor Quantum Structures and Devices (47 papers) and Ga2O3 and related materials (31 papers). J. Mickevičius is often cited by papers focused on GaN-based semiconductor devices and materials (71 papers), Semiconductor Quantum Structures and Devices (47 papers) and Ga2O3 and related materials (31 papers). J. Mickevičius collaborates with scholars based in Lithuania, United States and Taiwan. J. Mickevičius's co-authors include Gintautas Tamulaitis, M. S. Shur, R. Gaška, Jinwei Yang, A. Kadys, M. Shatalov, Jianping Zhang, T. Malinauskas, R. S. Qhalid Fareed and R. Aleksiejūnas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

J. Mickevičius

76 papers receiving 777 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Mickevičius Lithuania 17 661 382 377 306 229 79 808
Ryuji Katayama Japan 14 628 1.0× 264 0.7× 288 0.8× 421 1.4× 357 1.6× 129 808
G. Kamler Poland 17 781 1.2× 368 1.0× 418 1.1× 264 0.9× 350 1.5× 59 902
R. S. Qhalid Fareed United States 16 615 0.9× 343 0.9× 308 0.8× 194 0.6× 196 0.9× 34 701
Christopher D. Yerino United States 17 649 1.0× 368 1.0× 520 1.4× 271 0.9× 273 1.2× 22 867
A. Sohmer Germany 11 733 1.1× 319 0.8× 282 0.7× 403 1.3× 182 0.8× 21 815
Kikurou Takemoto Japan 12 600 0.9× 337 0.9× 326 0.9× 178 0.6× 269 1.2× 22 681
T. M. Smeeton United Kingdom 13 651 1.0× 247 0.6× 359 1.0× 341 1.1× 292 1.3× 32 845
V. A. Vekshin Russia 10 963 1.5× 530 1.4× 486 1.3× 399 1.3× 220 1.0× 22 1.0k
S. Dalmasso France 14 846 1.3× 406 1.1× 486 1.3× 327 1.1× 373 1.6× 42 1.0k
Takuji Okahisa Japan 7 644 1.0× 335 0.9× 301 0.8× 223 0.7× 249 1.1× 8 686

Countries citing papers authored by J. Mickevičius

Since Specialization
Citations

This map shows the geographic impact of J. Mickevičius's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Mickevičius with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Mickevičius more than expected).

Fields of papers citing papers by J. Mickevičius

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Mickevičius. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Mickevičius. The network helps show where J. Mickevičius may publish in the future.

Co-authorship network of co-authors of J. Mickevičius

This figure shows the co-authorship network connecting the top 25 collaborators of J. Mickevičius. A scholar is included among the top collaborators of J. Mickevičius based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Mickevičius. J. Mickevičius is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kadys, A., et al.. (2023). Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask. Nanomaterials. 13(4). 784–784. 3 indexed citations
2.
Kadys, A., J. Mickevičius, Ilja Ignatjev, et al.. (2022). MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates. Nanomaterials. 12(5). 785–785. 10 indexed citations
3.
Kadys, A., J. Mickevičius, Ilja Ignatjev, et al.. (2021). Remote epitaxy of GaN via graphene on GaN/sapphire templates. Journal of Physics D Applied Physics. 54(20). 205103–205103. 29 indexed citations
4.
Nargelas, Saulius, J. Mickevičius, A. Kadys, K. Jarašiūnas, & T. Malinauskas. (2020). Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics. Optics & Laser Technology. 134. 106624–106624. 6 indexed citations
5.
Mouri, Shinichiro, et al.. (2019). Enhancement of InN Luminescence by Introduction of Graphene Interlayer. Nanomaterials. 9(3). 417–417. 6 indexed citations
6.
Mickevičius, J., et al.. (2019). Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN. Journal of Physics Condensed Matter. 32(14). 145901–145901. 1 indexed citations
7.
Gaubas, E., J. Mickevičius, Julius Pavlov, et al.. (2019). Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN. Scientific Reports. 9(1). 1473–1473. 2 indexed citations
8.
Mickevičius, J., Mindaugas Andrulevičius, A. Kadys, et al.. (2019). Type-II band alignment of low-boron-content BGaN/GaN heterostructures. Journal of Physics D Applied Physics. 52(32). 325105–325105. 8 indexed citations
9.
Gaubas, E., et al.. (2018). Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si. Semiconductor Science and Technology. 33(7). 75015–75015. 5 indexed citations
10.
Aleksiejūnas, R., Saulius Nargelas, A. Kadys, et al.. (2018). Direct Auger recombination and density-dependent hole diffusion in InN. Scientific Reports. 8(1). 4621–4621. 9 indexed citations
11.
Gaubas, E., T. Malinauskas, S. Miasojedovas, et al.. (2017). Study of recombination characteristics in MOCVD grown GaN epi-layers on Si. Semiconductor Science and Technology. 32(12). 125014–125014. 6 indexed citations
12.
Malinauskas, T., et al.. (2014). Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD. physica status solidi (b). 252(5). 1138–1141. 17 indexed citations
13.
Tamulaitis, Gintautas, J. Mickevičius, V. Kazlauskienė, et al.. (2012). Suppression of defect‐related luminescence in laser‐annealed InGaN epilayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 1021–1023. 1 indexed citations
14.
Tamulaitis, Gintautas, J. Mickevičius, E. Kuokštis, et al.. (2012). Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(7). 1677–1679. 4 indexed citations
15.
Mickevičius, J., Karolis Kazlauskas, A. Žukauskas, et al.. (2012). Stimulated emission in AlGaN/AlGaN quantum wells with different Al content. Applied Physics Letters. 100(8). 23 indexed citations
16.
Tamulaitis, Gintautas, J. Mickevičius, Karolis Kazlauskas, et al.. (2011). Efficiency droop in high‐Al‐content AlGaN/AlGaN quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2130–2132. 11 indexed citations
17.
Tamulaitis, Gintautas, J. Mickevičius, E. Kuokštis, et al.. (2010). Spatially‐resolved photoluminescence study of high indium content InGaN LED structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 1869–1871. 6 indexed citations
18.
Mickevičius, J., et al.. (2009). Characterization of ZnSe(Te) scintillators by frequency domain luminescence lifetime measurements. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 610(1). 321–324. 2 indexed citations
19.
Mickevičius, J., et al.. (2008). Photoluminescence of Si nanocrystals under selective excitation. Journal of Physics and Chemistry of Solids. 70(2). 439–443. 13 indexed citations
20.
Tamulaitis, Gintautas, J. Mickevičius, M. S. Shur, et al.. (2006). Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1923–1926. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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